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Publications

refereed Publications (Total citations: >10,000, h-factor: 60, Google Scholar)

2022

188. Searching for Circular Photo Galvanic Effect in Oxyhalide Perovskite Bi4NbO8Cl, Z. Chen, R. Xu, S. Ma, Y. Ma, Y. Hu, L. Zhang, Y. Guo, Z. Huang, B. Wang, Y-Y Sun, J. Jiang, R. Hawks, R. Jia, Y. Xiang, G-Ch. Wang, E. A. Wertz, J. Tian, D. Gall, X. Chen, V. Wang, L. Gao, H. Zhu, and J. Shi, Adv. Funct. Mater. 2206343 (2022). pdf doi

187. Dominant Energy Carrier Transitions and Thermal Anisotropy in Epitaxial Iridium Thin Films, C. Perez, A. Jog, H. Kwon, D. Gall, M. Asheghi, S. Kumar, W. Park, K.E. Goodson, Adv. Funct. Mater. 2207781 (2022). pdf doi

186. Prediction of super hardness in transition metal hexa-nitrides from density functional theory computations, S. R. Kandel, B. B. Dumre, D. Gall, S. V. Khare, Materialia 25, 101550 (2022). pdf doi

185. Ultralow electron-surface scattering in nanoscale metals leveraging Fermi surface anisotropy, Sushant Kumar, Christian Multunas, Benjamin Defay, Daniel Gall and Ravishankar Sundararaman, Phys. Rev. Mat. 6, 085002 (2022). pdf doi

184. Giant pyroelectricity in nanomembranes, J. Jiang, L. Zhang, C. Ming, H. Zhou, P. Bose, Y. Guo, Y. Hu, B. Wang, Z. Chen, R. Jia, S. Pendse, Y. Xiang, Y. Xia, Z. Lu, X. Wen, Y. Cai, C. Sun, G.-C. Wang, T.-M. Lu, D. Gall, Y.-Y. Sun, N. Koratkar, E. Fohtung, Y. Shi, and J. Shi, Nature 607, 480 (2022). pdf doi

183. In situ high-temperature TEM observation of Inconel corrosion by molten chloride salts with N2, O2, H2O, Prachi Pragnya, Daniel Gall, Robert Hull, J. Electrochem. Soc. 169, 093504 (2022). pdf doi

182. Resistivity scaling in epitaxial CuAl2(001) layers, Minghua Zhang and Daniel Gall, IEEE Trans. Electron Devices 69, 5110 (2022). pdf doi

181. Electron scattering at surfaces and grain boundaries in Rh layers, Atharv Jog and Daniel Gall, IEEE Trans. Electron Devices 69, 3854 (2022). pdf doi

180. First-principles prediction of electron grain boundary scattering in fcc metals, Tianji Zhou, Atharv Jog, and Daniel Gall, Appl. Phys. Lett. 120, 241603 (2022). pdf doi

179. Effect of electronegativity on electron surface scattering in thin metal layers, Atharv Jog, Erik Milosevic, Pengyuan Zheng, and Daniel Gall, Appl. Phys. Lett. 120, 041601 (2022). pdf doi

178. Epitaxial TiCx(001) layers: Phase formation and physical properties vs C-to-Ti ratio, Peijiao Fang, C. P. Mulligan, Ru Jia, Jian Shi, S. V. Khare, Daniel Gall, Acta Mater. 226, 117643 (2022). pdf doi

177. Correlating structure and orbital occupation with the stability and mechanical properties of 3d transition metal carbides, I. Khatri, N. J. Szymanski, B.B. Dumre, J. G. Amar, D. Gall, S. V. Khare, J. Alloys Compd. 891, 161866 (2022). pdf doi

 

2021

176. Materials for Interconnects, Daniel Gall, Judy J. Cha, Zhihong Chen, Hyeuk-Jin Han, Christopher Hinkle, Joshua A. Robinson, Ravishankar Sundararaman, Riccardo Torsi, (invited article) MRS Bulletin 46, 959 (2021). pdf doi

175. Resistivity size effect in epitaxial iridium layers, Atharv Jog and Daniel Gall, J. Appl. Phys. 130, 115103 (2021). pdf doi

174. Van der Waals Epitaxy and Remote Epitaxy of LiNbO3 Thin Films by Pulsed Laser Deposition, Ru Jia, Hyun S. Kum, Xin Sun, Yuwei Guo, Baiwei Wang, Peijiao Fang, Jie Jiang, Daniel Gall, Toh-Ming Lu, Morris Washington, Jeehwan Kim, Jian Shi, J. Vac. Sci. Technol. A 39, 040405 (2021). pdf doi

173. Resistivity scaling in epitaxial MAX-phase Ti4SiC3(0001) layers, Minghua Zhang, Sushant Kumar, Ravishankar Sundararaman and Daniel Gall, J. Appl. Phys. 130, 034302 (2021). pdf doi

172. Epitaxial MoCx: competition between cubic d-MoCy(111) and hexagonal b-Mo2C(0001), Peijiao Fang, Baiwei Wang, and Daniel Gall, Surf. Coat. Technol. 420, 127333 (2021). pdf doi

171. In situ transmission electron microscopy of high-temperature Inconel-625 corrosion by molten chloride salts, Prachi Pragnya, Daniel Gall, Robert Hull, J. Electrochem. Soc. 168, 051507 (2021). pdf doi

170. Tunable infrared plasmonic properties of epitaxial Ti1−xMgxN(001) layers, Baiwei Wang, Poomirat Nawarat, Kim M. Lewis, Panos Patsalas, Daniel Gall, ACS Appl. Mater. Interfaces 13, 22738 (2021). pdf doi

169. Stability, and electronic and optical properties of ternary nitride phases of MgSnN2: A first- principles study, B. B. Dumre, D. Gall, and S. V. Khare, J. Phys. Chem. Solids 153, 110011 (2021). pdf doi

168. Interdiffusion Reliability and Resistivity Scaling of Intermetallic Compounds as Advanced Interconnect Materials, L. Chen, S. Kumar, M. Yahagi, D. Ando, Y. Sutou, D. Gall, R. Sundararaman, and J. Koike, J. Appl. Phys. 129, 035301 (2021). pdf doi

167. Resistivity size effect in epitaxial Rh(001) and Rh(111) layers, Atharv Jog, Tianji Zhou, and Daniel Gall, IEEE Trans. Electron Devices 68, 257 (2021). pdf doi

166. Epitaxial growth of cubic WCy(001) on MgO(001), P. Fang, B. Wang, C. P. Mulligan, T. M. Murray, S. V. Khare, D. Gall, J. Alloys Compd. 860, 158403 (2021). pdf doi

 

2020

165. Mary E. McGahay, Sanjay V. Khare, and Daniel Gall, "Metal-insulator transitions in epitaxial rocksalt-structure Cr1-x/2N1-xOx(001)," Phys. Rev. B 102, 235102 (2020). pdf doi

164. Y.R. Koh, J. Shi, B. Wang, R. Hu, H. Ahmad, S. Kerdsongpanya, E. Milosevic, W.A. Doolittle, D. Gall, Z. Tian, S. Graham, and P.E. Hopkins, "Thermal boundary conductance across epitaxial metal/sapphire interfaces," Phys. Rev. B 102, 205304 (2020). pdf doi

163. Baiwei Wang, Minghua Zhang, Vijaya Adhikari, Peijiao Fang, Sanjay V. Khare, Daniel Gall, "Bandgap and strain engineering in epitaxial-rocksalt structure (Ti0.5Mg0.5)1−xAlxN(001) semiconductors," J. Mater. Chem. C 8, 12677 (2020). pdf doi

162. K. Barmak, K. Sentosun, A. Zangiabadi, E. Milosevic, D. Gall, M. Zecevic, R.A. Lebensohn, J.A. Floro, "Defects in epitaxial Ru(0001) on Al2O3(0001): Dislocations, Stacking Faults and Deformation Twins," J. Appl. Phys. 128, 045304 (2020). pdf doi

161. M. Gioti, J. Arvanitidis, D. Christofilos, K. Chaudhuri, T. Zorba, G. Abadias, D. Gall, V.Μ. Shalaev, A. Boltasseva, P. Patsalas, "Plasmonic and Phononic Properties of Epitaxial Conductive Transition Metal Nitrides," J. Opt. 22, 084001 (2020). doi

160. I. S. Khare, N. J. Szymanski, D. Gall, R. E. Irving, "Electronic, optical and thermoelectric properties of sodium pnictogen chalcogenides: A first principles study," Comp. Mat. Sci. 183, 109818 (2020). doi

159. Mary E. McGahay, Baiwei Wang, Jian Shi and Daniel Gall, "Band gap and electron transport in epitaxial cubic Cr1-xAlxN(001)," Phys. Rev. B 101, 205206 (2020). pdf doi

158. Baiwei Wang, Kiumars Aryana, John T. Gaskins, Patrick E. Hopkins, Sanjay V. Khare, and Daniel Gall, "Structural stabilization and piezoelectric enhancement in epitaxial (Ti1−xMgx)0.25Al0.75N(0001) layers," Adv. Funct. Mater. 30, 2001915 (2020). pdf doi

157. Erik Milosevic and Daniel Gall, "Electron scattering at Co(0001) surfaces: Effects of Ti and TiN capping layers," AIP Advances 10, 055213 (2020). pdf doi

156. Katayun Barmak, Sameer Ezzat, Ryan Gusley, Atharv Jog, Sit Kerdsongpanya, Asim Khanya, Erik Milosevic, William Richardson, Kadir Sentosun, Amirali Zangiabadi, Daniel Gall, William E. Kaden, Eduardo R. Mucciolo, Patrick K. Schelling, Alan C. West, Kevin R. Coffey, "Epitaxial metals for interconnects beyond Cu," (Editor's pick: Featured Article) J. Vac. Sci. Technol. A 38, 033406 (2020). doi

155. Y. Hu, F. Florio, Z. Chen, W. A. Phelan, M. A. Siegler, Z. Zhou, Y. Guo, R. Hawks, J. Jiang, J. Feng, L. Zhang, B. Wang, Y. Wang, D. Gall, E. F. Palermo, Z. Lu, X. Sun, T.-M. Lu, H. Zhou, Y. Ren, E. Wertz, R. Sundararaman, J. Shi, "A Chiral Switchable Photovoltaic Ferroelectric 1D Perovskite," Sci. Adv. 9, eaay4213 (2020). doi

154. Daniel Gall, "The search for the most conductive metal for narrow interconnect lines," (invited perspectives article; also: Editor's pick: "Featured Article") J. Appl. Phys. 127, 050901 (2020). pdf doi

153. Y. Guo, X. Sun, J. Jiang, B. Wang, X. Chen, X. Yin, W. Qi, L. Gao, L. Zhang, Z. Lu, R. Jia, S. Pendse, Y. Hu, Z. Chen, E. Wertz, D. Gall, J. Feng, T.-M. Lu, J. Shi, "A reconfigurable remotely epitaxial VO2 electrical heterostructure," Nano Lett. 20, 33 (2020). doi

 

2019

152. B. B. Dumre, N. J. Szymanski, V. Adhikari, I. Khatri, D. Gall, and S. V. Khare, "Improved optoelectronic properties in CdSexTe1-x through controlled composition and short-range order," Solar Energy 194, 742 (2019). pdf doi

151. P. Pragnya, A. Pinkowitz, R. Hull, and D. Gall, "Electrochemical memristive devices based on submonolayer metal deposition," APL Mater. 7, 101121 (2019). pdf doi

150. N. J. Szymanski, I. Khatri, J. G. Amar, D. Gall, and S. V. Khare, " Unconventional superconductivity in 3d rocksalt transition metal carbides," J. Mater. Chem. C 7, 12619 (2019). pdf doi

149. J. Jiang, X. Sun, X. Chen, B. Wang, Z. Chen, Y. Hu, Y. Guo, L. Zhang, Y. Ma, L. Gao, F. Zheng, L. Jin, M. Chen, Z. Ma, Y. Zhou, N. Padture, K. Beach, H. Terrones, Y. Shi, D. Gall, T-M. Lu, E. Wertz, J. Feng, and J. Shi, "Carrier Lifetime Enhancement in Halide Perovskite via Remote Epitaxy," Nat. Comm. 10, 4145 (2019). doi

148. N. J. Szymanski, V. Adhikari, M. A. Willard, P. Sarin, D. Gall, and S. V. Khare, "Prediction of improved magnetization and stability in Fe16N2 through alloying," J. Appl. Phys. 126, 093903 (2019). pdf doi

147. Erik Milosevic, Pengyuan Zheng, and Daniel Gall, "Electron Scattering at Epitaxial Ni(001) Surfaces," IEEE Trans. Electron Devices 66, 4326 (2019). pdf doi

146. S. Kassavetis, B.D. Ozsdolay, N. Kalfagiannis, A. Habib, J.-H. Tortai, S. Kerdsongpanya, R. Sundararaman, M. Stchakovsky, D.V. Bellas, D. Gall, and P. Patsalas, "Near-zero negative real permittivity in far ultraviolet: Extending plasmonics and photonics with B1-MoNx," J. Phys. Chem. C. 123, 21120 (2019). pdf doi

145. V. Adhikari, N. J. Szymanski, I. Khatri, D. Gall, S. V. Khare, "First principles investigation into the phase stability and enhanced hardness of TiN-ScN and TiN-YN alloys," Thin Solid Films 688, 137284 (2019). pdf doi

144. Erik Milosevic, Sit Kerdsongpanya, Mary E. McGahay, Baiwei Wang, Daniel Gall, "The Resistivity Size Effect in Epitaxial Nb(001) and Nb(011) Layers," IEEE Trans. Electron Devices 66, 3473 (2019). pdf doi

143. Erik Milosevic, Sit Kerdsongpanya, Mary E. McGahay, Amirali Zangiabadi, Katayun Barmak, Daniel Gall, "Resistivity scaling in epitaxial Co(0001) layers," J. Appl. Phys. 125, 245105 (2019). pdf doi

142. Sameer S. Ezzat, Prabhu Doss Mani, Asim Khaniya, William Kaden, Daniel Gall, Katayun Barmak, and Kevin R. Coffey, "Resistivity and surface scattering of (0001) single crystal ruthenium thin films" J. Vac. Sci. Technol. A 37, 031516 (2019)). pdf doi

141. Erik Milosevic and Daniel Gall, "Copper Interconnects: Surface State Engineering to Facilitate Specular Electron Scattering," IEEE Trans. Electron Devices 66, 2692 (2019). pdf doi

140. Mary E. McGahay and Daniel Gall, "Conductive surface oxide on CrN(001) layers," Appl. Phys. Lett. 114, 131602 (2019). pdf doi

139. Baiwei Wang and Daniel Gall, "Fully strained epitaxial Ti1−xMgxN(001) layers," Thin Solid Films, 688, 137165 (2019). pdf doi

 

2018

138. Linghan Chen, Daisuke Ando, Yuji Sutou, Daniel Gall, Junichi Koike, "NiAl as a Potential Material for Liner- and Barrier-Free Interconnect in Ultrasmall Technology Node," Appl. Phys. Lett. 113, 183503 (2018). pdf doi

137. Erik Milosevic, Sit Kerdsongpanya, Amirali Zangiabadi, Katayun Barmak, Kevin R. Coffey, Daniel Gall, "Resistivity Size Effect in Epitaxial Ru(0001) Layers," J. Appl. Phys. 124, 165105 (2018). pdf doi

136. N. J. Szymanski, L. N. Walters, O. Hellman, D. Gall and S. V. Khare, "Dynamical stabilization in delafossite nitrides for solar energy conversion," J. Mater. Chem. A 6, 20852 (2018). pdf doi

135. Baiwei Wang, Sit Kerdsongpanya, Mary E. McGahay, Erik Milosevic, Panos Patsalas, and Daniel Gall, "Growth and properties of epitaxial Ti1−xMgxN(001) layers" J. Vac. Sci. Technol. A 36, 061501 (2018). pdf doi

134. Karthik Balasubramanian, Sanjay V. Khare and Daniel Gall, "Energetics of point defects in rocksalt structure transition metal nitrides: physical origin for deviations from stoichiometry" Acta Mater. 159, 77 (2018). pdf doi

133. Tianji Zhou, Nicholas A. Lanzillo, Prasad Bhosale, Daniel Gall, and Roger Quon, "A first-principles analysis of ballistic conductance, grain boundary scattering and vertical resistance in aluminum interconnects," AIP Advances 8, 055127 (2018). pdf doi

132. V. Adhikari, Z.T.Y. Liu, N.J. Szymanski, I. Khatri, D. Gall, P. Sarin, S.V. Khare, "First-principles study of mechanical and magnetic properties of transition metal (M) nitrides in the cubic M4N structure" J. Phys. Chem. Solids 120, 197 (2018). doi

131. Karthik Balasubramanian, Sanjay V. Khare and Daniel Gall, "Valence electron concentration as an indicator for mechanical properties in rocksalt structure nitrides, carbides and carbonitrides," Acta Mater. 152, 175 (2018). pdf doi supplementary material

130. T. Zhou and D. Gall, "Resistivity scaling due to electron surface scattering in thin metal layers," Phys. Rev. B 97, 165406 (2018). pdf doi

129. T. Zhou, P.Y. Zheng, Sumeet C. Pandey, Ravishankar Sundararaman, and D. Gall, "The electrical resistivity of rough thin films: A model based on electron reflection at discrete step edges," J. Appl. Phys. 123, 155107 (2018). pdf doi

 

2017

128. Karthik Balasubramanian, Liping Huang and Daniel Gall, "Phase stability and mechanical properties of Mo1-xNx with 0 ≤ x ≤ 1," J. Appl. Phys. 122, 195101 (2017). pdf doi supplementary material

127. P.Y. Zheng, T. Zhou, B.J. Engler, J.S. Chawla, R. Hull and D. Gall, "Surface roughness dependence of the electrical resistivity of W(001) layers," J. Appl. Phys. 122, 095304 (2017). pdf doi

126. B. D. Ozsdolay, X. Shen, K. Balasubramanian, G. Scannell, L. Huang, M. Yamaguchi, and D. Gall, "Elastic constants of epitaxial cubic MoNx(001) layers," Surf. Coat. Technol. 325, 572 (2017). pdf doi

125. Chryssoula Metaxa, Spyros Kassavetis, Jean Francois Pierson, Daniel Gall, Panos Patsalas, "Infrared plasmonics with conductive ternary nitrides," ACS Appl. Mater. Interfaces 9, 10825 (2017). doi

124. C. Metaxa, B. D. Ozsdolay, T. Zorba, K. Paraskevopoulos, D. Gall, and P. Patsalas "Electronic and optical properties of rocksalt-phase tungsten nitride (B1-WN)," J. Vac. Sci. Technol. A 35, 031501 (2017). pdf doi

123. Pengyuan Zheng and Daniel Gall, "The anisotropic size effect of the electrical resistivity of metal thin films: Tungsten," J. Appl. Phys. 122, 135301 (2017). pdf doi

122. B. D. Ozsdolay, K. Balasubramanian, and D. Gall, "Cation and anion vacancies in cubic molybdenum nitride," J. Alloys Compd. 705, 631 (2017). pdf doi

121. Z. T. Y. Liu, B. P. Burton, S. V. Khare, and D. Gall, "First-principles phase diagram calculations for the rocksalt-structure quasibinary systems TiN-ZrN, TiN-HfN and ZrN-HfN," J. Phys: Cond. Mat. 29, 035401 (2017). pdf doi

 

2016

120. Karthik Balasubramanian, Sanjay Khare and Daniel Gall, "Vacancy induced mechanical stabilization of cubic tungsten nitride," Phys. Rev. B 94, 174111 (2016). pdf doi

119. B. D. Ozsdolay, C. P. Mulligan, K. Balasubramanian, Liping Huang, S. V. Khare, and D. Gall, "Cubic β-WNx layers: growth and properties vs N-to-W ratio," Surf. Coat. Technol. 304, 98 (2016). pdf doi

118. Mathieu Cesar, Daniel Gall, and Hong Guo, "Reducing the Grain Boundary Resistivity of Copper by Doping," Phys. Rev. Appl. 5, 054018 (2016). pdf doi

117. P.Y. Zheng, T. Zhou, and D. Gall, "Electron channeling in TiO2 coated Cu layers," Semiconductor Sci. Technol. 31, 055005 (2016). pdf doi

116. D. Gall, "Electron mean free path in elemental metals," J. Appl. Phys. 119, 085101 (2016). pdf doi

115. K. Zhang, K. Balasubramanian, B.D. Ozsdolay, C.P. Mulligan, S.V. Khare, W.T. Zheng, and D. Gall, "Growth and mechanical properties of epitaxial NbN(001) films on MgO(001)," Surf. Coat. Technol. 288, 105 (2016). pdf doi

 

2015

114. B. D. Ozsdolay, C. P. Mulligan, M. Guerette, L. Huang, and D. Gall, "Epitaxial growth and properties of cubic WN on MgO(001), MgO(111), and Al2O3(0001)," Thin Solid Films, 590, 276 (2015). pdf doi

113. P. C. Jamison, Takaaki Tsunoda, T. Vo, J. Li, H. Jagannathan, S. R. Shinde, V. K. Paruchuri, D. Gall, "SiO2 Free HfO2 Gate Dielectrics by Physical Vapor Deposition," IEEE Trans. Electron Devices, 62, 2878 (2015). pdf doi

112. K. Zhang, K. Balasubramanian, B.D. Ozsdolay, C.P. Mulligan, S.V. Khare, W.T. Zheng, and D. Gall, "Epitaxial NbCxN1-x(001) layers: Growth, mechanical properties, and electrical resistivity," Surf. Coat. Technol. 277, 136 (2015). pdf doi

111. R.P. Deng, P.Y. Zheng, and D. Gall, "Optical and electron transport properties of rock-salt Al1-xScxN," J. Appl. Phys. 118, 015706 (2015). pdf doi

110. C.P. Mulligan, R. Wei, G. Yang, P. Zheng, R. Deng, D. Gall, "Microstructure and age hardening of C276 alloy coatings," Surf. Coat. Technol. 270, 299 (2015). pdf doi

109. P.Y. Zheng, B. D. Ozsdolay, and D. Gall, "Epitaxial Growth of Tungsten Layers on MgO(001)," J. Vac. Sci. Technol. A 33, 061505 (2015). pdf doi

108. R.P. Deng, B. Ozsdolay, P.Y. Zheng, S.V. Khare, and D. Gall, "Optical and transport measurement and first-principles determination of the ScN band gap," Phys. Rev. B 90, 045104 (2015). pdf doi

 

2014

107. Z. T. Y. Liu, D. Gall and S. V. Khare, "Electronic and bonding analysis of hardness in pyrite-type transition metal pernitrides," Phys. Rev. B 90, 134102 (2014). pdf doi

106. Pengyuan Zheng, R.P. Deng, and D. Gall, "Ni Doping on Cu Surfaces: Reduced Copper Resistivity," Appl. Phys. Lett. 105, 131603 (2014). pdf doi

105. Mathieu Cesar, Dongping Liu, Daniel Gall, and Hong Guo, "Calculated Resistances of Single Grain Boundaries in Copper," Phys. Rev. Appl. 2, 044007 (2014). pdf doi

104. Kan Zhang, M. Wen, S. Wang, R.P. Deng, D. Gall, and W.T. Zheng, "Sputter Deposited NbCxNy films: Effect of Nitrogen Content on Structure and Mechanical and Tribological Properties," Surf. Coat. Technol. 258, 746 (2014). doi

103. X. Zhou, D. Gall and S. V. Khare, "Mechanical properties and electronic structure of anti-ReO3 structured cubic nitrides, M3N, of d block transition metals M: an ab initio study," J. Alloys Comp. 595, 80 (2014). doi

102. Z. T. Y. Liu, X. Zhou, D. Gall and S. V. Khare, "First-principles investigation of the structural, mechanical and electronic properties of the NbO-structured 3d, 4d and 5d transition metal nitrides," Comp. Mat. Sci. 84, 365 (2014). doi

101. R.P. Deng, K. Jiang, and D. Gall, "Optical Phonon Modes in Al1-xScxN," J. Appl. Phys. 115, 013506 (2014). pdf doi

100. Z. T. Y. Liu, X. Zhou, S. V. Khare and D. Gall, "Structural, mechanical and electronic properties of 3d transition metal nitrides in cubic zincblende, rocksalt and cesium chloride structures: a first-principles investigation," J. Phys.: Cond. Mat. 26, 025404 (2014). doi

 

2013

99. R.P. Deng, S.R. Evans, and D. Gall, "Bandgap in Al1-xScxN," Appl. Phys. Lett. 102, 112103 (2013). pdf doi

98. J. S. Chawla, X.Y. Zhang and D. Gall, "Effective Electron Mean Free Path in TiN(001)," J. Appl. Phys. 113, 063704 (2013). pdf doi

97. S. Mukherjee and D. Gall, "Structure Zone Model for Extreme Shadowing Conditions," Thin Solid Films, 527, 158 (2013). doi

 

2012

96. P.A. Papi, C.P. Mulligan, and D. Gall, "CrN-Ag Nanocomposite Coatings: Control of Lubricant Transport by Diffusion Barriers," Thin Solid Films, 524, 211 (2012). doi

95. C.P. Mulligan, P.A. Papi, and D. Gall, "Ag transport in CrN-Ag nanocomposite coatings," Thin Solid Films 520, 6774 (2012). doi

94. R.P. Deng, P. Muralt, and D. Gall, "Bi-axial texture development in AlN layers during off-axis sputter deposition," J. Vac. Sci. Tech. A, 30, 051501 (2012). pdf doi

93. J.S. Chawla and D. Gall, "Epitaxial Ag(001) grown on MgO(001) and TiN(001): Twinning, surface morphology, and electron surface scattering," J. Appl. Phys. 111, 043708 (2011). pdf doi

 

2011

92. J. S. Chawla, F. Gstrein, K. P. O'Brien, J. S. Clarke, and D. Gall, "Electron scattering at surfaces and grain boundaries in Cu thin films and wires," Phys. Rev. B, 84, 235423 (2011). pdf doi

91. J.S. Chawla, X. Y. Zhang and D. Gall, "Epitaxial TiN(001) wetting layer for growth of thin single-crystal Cu(001)," J. Appl. Phys. 110, 043714 (2011). pdf doi

90. X. Y. Zhang, J. S. Chawla, R. P. Deng, and D. Gall, "Epitaxial suppression of the metal-insulator transition in CrN," Phys. Rev. B, 84, 073101 (2011). pdf doi

89. X.Y. Zhang, J.S. Chawla, B.M. Howe, D. Gall, "Variable-range hopping conduction in epitaxial CrN(001)," Phys. Rev. B, 83, 165205 (2011). pdf doi

 

2010

88. S. Cazottes, Z.L. Zhang, R. Daniel, J.S. Chawla, D. Gall, G. Dehm, "Structural characterization of a Cu/MgO(001) interface using CS-corrected HRTEM," Thin Solid Films 519, 1662 (2010). doi

87. C.P. Mulligan, T.A. Blanchet, and D. Gall, "Control of lubricant transport by a CrN diffusion barrier layer during high-temperature sliding of a CrN-Ag composite coating," Surf. Coat. Technol. 205, 1350 (2010). doi

86. J. S. Chawla, F. Zahid, H. Guo, and D. Gall, "Effect of O2 adsorption on electron scattering at Cu(001) surfaces," Appl. Phys. Lett. 97, 132106 (2010). pdf doi

85. X.Y. Zhang and D. Gall, "CrN electronic structure and vibrational modes: an optical analysis," Phys. Rev. B 82, 045116 (2010). pdf doi

84. C.P. Mulligan, T.A. Blanchet, and D. Gall, "CrN-Ag nanocomposite coatings: High temperature tribological response." Wear 269, 125 (2010). doi

83. S. Mukherjee and D. Gall, "Power law scaling during physical vapor deposition under extreme shadowing," J. Appl. Phys. 107, 084301 (2010). pdf doi

82. F. Zahid, Y. Ke, D. Gall, and H. Guo "Resistivity of thin Cu films coated with Ta, Ti, Ru, Al, and Pd barrier layers from first principles," Phys. Rev. B 81, 045406 (2010). pdf doi

81. M.D. Gasda, G.A. Eisman, and D. Gall, "Nanorod PEM Fuel Cell Cathodes with Controlled Porosity," J. Electrochem. Soc. 157, B437 (2010); also featured in: Virt. J. Nanoscale Sci. Tech. 21, 7 (2010). pdf doi

80. X.Y. Zhang and D. Gall, "Surface Mound Formation during Epitaxial Growth of CrN(001)," Thin Solid Films 518, 3813 (2010). doi

79. S. V. Kesapragada, T-J. Yim, J. S. Dordick, R.S. Kane, and D. Gall, "Selective assembly of multi-component nanosprings and nanorods," J. Nanosci. Nanotechnol. 10, 2252 (2010). doi

78. C.P. Mulligan, T.A. Blanchet, and D. Gall, "CrN-Ag nanocomposite coatings: Tribology at room temperature and during a temperature ramp," Surf. Coat. Technol. 204, 1388 (2010). doi

77. M.D. Gasda, G.A. Eisman, and D. Gall, "Sputter-Deposited Pt/CrN Nanoparticle PEM Fuel Cell Cathodes: Limited Proton Conductivity through Electrode Dewetting," J. Electrochem. Soc. 156, B71 (2010). pdf doi

76. M.D. Gasda, G.A. Eisman, and D. Gall, "Pore formation by in situ etching of nanorod PEM fuel cell electrodes," J. Electrochem. Soc. 156, B113 (2010). pdf doi

 

2009

75. S. Mukherjee and D. Gall, "Anomalous scaling during glancing angle deposition," Appl. Phys. Lett 95, 173106 (2009). pdf doi

74. G. Dehm, H.P. Worgotter, S. Cazottes, J.M. Purswani, D. Gall, C. Mitterer, and D. Kiener, "Can micro-compression testing provide stress-strain data for thin films? A comparative study using Cu, VN, TiN and W coatings," Thin Solid Films 518, 1517 (2009). doi

73. J. S. Chawla and D. Gall, "Specular electron scattering at single-crystal Cu(001) surfaces," Appl. Phys. Lett 94, 252101 (2009). pdf doi

72. Youqi Ke, Ferdows Zahid, V. Timoshevskii, Ke Xia, D. Gall, and Hong Guo, "Resistivity of thin Cu films with surface roughness," Phys. Rev. B 79, 155406 (2009). pdf doi

71. S. Mukherjee, C. M. Zhou and D. Gall, "Temperature-induced chaos during nanorod growth by physical vapor deposition," J. Appl. Phys. 105 (2009). pdf doi

70. M.D. Gasda, R. Teki, T.-M. Lu, N. Koratkar, G.A. Eisman, and D. Gall, "Sputter-deposited Pt PEM fuel cell electrodes: particles vs. layers," J. Electrochem. Soc. 156, B614 (2009). pdf doi

 

2008

69. C. M. Zhou, H.F. Li, and D. Gall, "Multi-component nanostructure design by atomic shadowing," Thin Solid Films 517, 1214 (2008). doi

68. C.P. Mulligan, T.A. Blanchet, and D. Gall, "CrN-Ag nanocomposite coatings: Effect of growth temperature on the microstructure," Surf. Coat. Technol. 203, 584 (2008). doi

67. J. M. Purswani and D. Gall, "Surface Morphological Evolution during Annealing of Epitaxial Cu(001) Layers," J. Appl. Phys. 104, 044305 (2008). pdf doi

66. V. Timoshevskii, Youqi Ke, Hong Guo, and D. Gall, "The influence of surface roughness on electrical conductance of thin Cu films: an ab initio study," J. Appl. Phys. 103, 113705 (2008). pdf doi

65. H.P. Worgotter, D. Kiener, J.M. Purswani, D. Gall, and G. Dehm, "Testing thin films by micro-compression: Benefits and limits," BHM 153, 257 (2008). doi

64. C.M. Zhou and D. Gall, "Two-Component Nanorod arrays by Glancing Angle Deposition," Small 4, 1351 (2008). doi

63. R. Nagar, B. R. Mehta, J. P. Singh, D. Jain, V. Ganesan, S. V. Kesapragada, and D. Gall, "Effect of swift heavy ion irradiation on the hardness of chromium nanorods," J. Vac. Sci. Technol. A 26, 887 (2008). pdf doi

62. S.V. Kesapragada, P.R. Sotherland, and D. Gall, "Ta nanotubes grown by glancing angle deposition," J. Vac. Sci. Technol. B 26, 678 (2008). pdf doi

61. C.M. Zhou and D. Gall, "Development of two-level porosity during glancing angle deposition," J. Appl. Phys. 103, 014307 (2008). pdf doi

 

2007

60. P. Victor, L. Ci, S. Sreekala, A. Kumar, S.V. Kesapragada, D. Gall, O. Nalamasu, and P.M. Ajayan, J. Suhr, "Effects of compressive strains on electrical conductivities of a macroscale carbon nanotube block," Appl. Phys. Lett. 91, 153116 (2007). pdf doi

59. J.M. Purswani and D. Gall, "Electron Scattering at Single Crystal Cu Surfaces," Thin Solid Films, 516, 465 (2007). doi

58. C.M. Zhou and D. Gall, "Surface patterning by nanosphere lithography for layer growth with ordered pores," Thin Solid Films 516, 433 (2007). doi

57. C.M. Zhou and D. Gall, "Competitive Growth of Ta Nanopillars during Glancing Angle Deposition: Effect of Surface Diffusion," J. Vac. Sci. Technol. A 25, 312 (2007). pdf doi

56. C.M. Zhou and D. Gall, "Growth Competition during Glancing Angle Deposition of Nanorod Honeycomb Arrays," Appl. Phys. Lett. 90, 093103 (2007). pdf doi

 

2006

55. S. V. Kesapragada, P. Victor, O. Nalamasu, and D. Gall, "Nanospring pressure sensors grown by glancing angle deposition," Nano Lett. 6, 854 (2006). doi

54. C.M. Zhou and D. Gall, "Branched Ta nanocolumns grown by glancing angle deposition," Appl. Phys. Lett. 88, 203117 (2006). pdf doi

53. S. V. Kesapragada and D. Gall, "Two-component nanopillar arrays grown by glancing angle deposition," Thin Solid Films 494, 234 (2006). doi

52. J.R. Frederick, J. D'Arcy-Gall, D. Gall, "Growth of Epitaxial CrN on MgO(001): Role of Deposition Angle on Surface Morphological Evolution," Thin Solid Films, 494, 330 (2006). doi

51. K. Kutschej, C. Mitterer, C.P. Mulligan, and D. Gall, "High-Temperature Tribological Behavior of CrN-Ag Self-lubricating Coatings," Adv. Eng. Mat. 8, 1125 (2006). doi

50. J.M. Purswani, T. Spila, and D. Gall, "Growth of Epitaxial Cu on MgO(001) by magnetron sputter deposition," Thin Solid Films, 515, 1166 (2006). doi

49. C.M. Zhou and D. Gall, "The structure of Ta Nanopillars Grown by Glancing Angle Deposition," Thin Solid Films, 515, 1223 (2006). doi

48. S. V. Kesapragada and D. Gall, "Anisotropic Broadening of Cu Nanorods during Glancing Angle Deposition," Appl. Phys. Lett. 89, 203121 (2006). pdf doi

 

2005

47. C. W. Lim, C.-S. Shin, D. Gall, J. M. Zuo, I. Petrov, and J. E. Greene, "Growth of CoSi2 on Si(001) by reactive deposition epitaxy," J. Appl. Phys. 97, 044909 (2005). pdf doi

46. Marcel A. Wall, David G. Cahill, I. Petrov, D. Gall, J.E. Greene, "Nucleation kinetics versus nitrogen partial pressure during homoepitaxial growth of stoichiometric TiN(001): A scanning tunneling microscopy study," Surf. Sci. 581, L122 (2005). doi

45. J.R. Frederick and D. Gall, "Nanostaircases: An Atomic Shadowing Instability during Epitaxial CrN(001) Layer Growth," Appl. Phys. Lett. 87, 053107 (2005); also featured in: Virt. J. Nanoscale Sci. Tech. 12, 6 (2005). pdf doi

44. H.-S. Seo, T.-Y. Lee, I. Petrov, J. E. Greene, and D. Gall, "Epitaxial and polycrystalline HfNx (0.8 < x < 1.5) layers on MgO(001): Film growth and physical properties," J. Appl. Phys. 97, 083521 (2005). pdf doi

43. J.R. Frederick and D. Gall, "Surface morphological evolution of epitaxial CrN(001) layers," J. Appl. Phys. 98, 054906 (2005). pdf doi

42. C.P. Mulligan and D. Gall, "CrN-Ag Self-Lubricating Hard Coatings," Surf. Coat. Technol. 200, 1495 (2005). doi

41. Jian Wang, Hanchen Huang, S. V. Kesapragada, and Daniel Gall, "Growth of Y-Shaped Nanorods through Physical Vapor Deposition," Nano Lett. 5, 2505 (2005). doi

 

2004

40. C.-S. Shin, S. Rudenja. D. Gall, N. Hellgren, T.-Y. Lee, I. Petrov, and J. E. Greene, "Growth, surface morphology, and electrical resistivity of fully-strained substoichiometric epitaxial TiNx (0.67 < x < 1.0) layers on MgO(001)", J. Appl. Phys. 95, 356 (2004). pdf doi

39. H. A. Al-Brithen, A. R. Smith, and D. Gall, "Surface and bulk electronic structure of ScN(001) investigated by scanning tunneling microscopy/spectroscopy and optical absorption spectroscopy," Phys. Rev. B 70, 045303 (2004). pdf doi

38. H.-S. Seo, T.-Y. Lee, J. G. Wen, I. Petrov, J. E. Greene, and D. Gall, "Growth and physical properties of epitaxial HfN layers on MgO(001)," J. Appl. Phys. 96, 878 (2004). pdf doi

37. M.A. Wall, D.G. Cahill, I. Petrov, D. Gall, and J.E. Greene, "Nucleation kinetics during homoepitaxial growth of TiN(001) by reactive magnetron sputtering," Phys. Rev. B 70, 035413 (2004). pdf doi

 

2003

36. D. Gall, S. Kodambaka, M.A. Wall, I. Petrov, and J.E. Greene, "Pathways of atomistic processes on TiN(001) and TiN(111) surfaces during film growth: an ab initio study", J. Appl. Phys. 93, 9086 (2003). pdf doi

35. F. Tian, J. D'Arcy-Gall, T.-Y. Lee, M. Sardela, D. Gall, I. Petrov, and J.E. Greene, "Epitaxial Ti1-xWxN alloys grown on MgO(001) by ultrahigh vacuum reactive magnetron sputtering: Electronic properties and long-range cation ordering", J. Vac. Sci. Technol. A 21, 140 (2003). pdf doi

34. C.-S. Shin, D. Gall, N. Hellgren, J. Patscheider, I. Petrov, and J. E. Greene, "Vacancy hardening in single-crystal TiNx layers", J. Appl. Phys. 93, 6025 (2003). pdf doi

33. T.-Y. Lee, D. Gall, C.-S. Shin, N. Hellgren, I. Petrov, and J. E. Greene, "Growth and physical properties of epitaxial CeN layers on MgO(001)", J. Appl. Phys. 94, 921 (2003). pdf doi

 

2002

32. S. Kodambaka, V. Petrova, S.V. Khare, D. Gall, A. Rockett, I. Petrov, and J.E. Greene, "Size-Dependent Detachment-Limited Decay Kinetics of Two-Dimensional TiN Islands on TiN(111)", Phys. Rev. Lett. 89, 176102 (2002). pdf doi

31. C.-S. Shin, Y.-W. Kim, D. Gall, J. E. Greene, and I. Petrov, "Phase Composition and Microstructure of Polycrystalline and Epitaxial TaNx Layers Grown on Oxidized Si(001) and MgO(001) by Reactive Magnetron Sputter Deposition", Thin Solid Films 402, 172 (2002). doi

30. D. Gall, C.-S. Shin, T. Spila, M. Oden, M.J.H. Senna, J.E. Greene, and I. Petrov, "Growth of Single-Crystal CrN on MgO(001): Effects of Low-energy Ion-irradiation on Surface Morphological Evolution and Physical Properties", J. Appl. Phys. 91, 3589 (2002). pdf doi

29. S. Y. Park, J. D'Arcy-Gall, D. Gall, Y.-W. Kim, P. Desjardins, and J. E. Greene, "C lattice site distributions in metastable Ge1-yCy alloys grown on Ge(001) by melecular-beam epitaxy", J. Appl. Phys. 91, 3644 (2002). pdf doi

28. D. Gall, C.-S. Shin, R.T. Haasch, I. Petrov, and J. E. Greene, "Band Gap in Epitaxial NaCl-structure CrN(001) Layers", J. Appl. Phys. 91, 5882 (2002). pdf doi

27. S. Y. Park, J. D'Arcy-Gall, D. Gall, J.A.N.T. Soares, Y.-W. Kim, P. Desjardins, and J. E. Greene, "Carbon incorporation pathways and lattice sites in Si1-yCy alloys grown on Si(001) by molecular-beam epitaxy", J. Appl. Phys. 91, 5716 (2002). pdf doi

26. H.A.H. AL-Brithen, E.M. Trifan, D.C. Ingram, A.R. Smith, D. Gall, "Phase Stability, nitrogen vacancies, growth mode, and surface structure of ScN(001) under Sc-rich conditions", J. Crystal Growth 242, 345 (2002). doi

25. C.-S. Shin, D. Gall, Y.-W. Kim, N. Hellgren, I. Petrov, and J. E. Greene, "Development of Preferred Orientation in Polycrystalline NaCl-structure d-TaN Layers Grown by Reactive Magnetron Sputtering: Role of Low-Energy Ion/Surface Interactions", J. Appl. Phys. 92, 5084 (2002). pdf doi

24. C.-S. Shin, Y.-W. Kim, N. Hellgren, D. Gall, I. Petrov, and J. E. Greene, "Epitaxial Growth of Metastable delta-TaN layers on MgO(001) using low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering, J. Vac. Sci. Technol. A 20, 2007 (2002). pdf doi

 

2001

23. D. Gall, M. Stoehr, and J. E. Greene, "Vibrational Modes in Epitaxial Sc1-xTixN(001) Layers: An Ab-initio Calculation and Raman Spectroscopy Study" Phys. Rev. B. 64, 174302 (2001). pdf doi

22. D. Gall, I. Petrov, and J. E. Greene, "Epitaxial Sc1-xTixN(001): Optical and Electronic Transport Properties," J. Appl. Phys. 89, 401 (2001). pdf doi

21. D. Gall, M. Stadele, K. Jarrendahl, I. Petrov, P. Desjardins, R.T. Haasch, T.-Y. Lee, and J. E. Greene, "Electronic Structure of ScN Determined using Optical Spectroscopy, Photoemission, and ab initio Calculations," Phys. Rev. B. 63, 125119 (2001). pdf doi

20. A. R. Smith, H.A.H. Al-Brithen, D.C. Ingram, and D. Gall, "Molecular Beam Epitaxy Control of the Structural, Optical, and Electronic Properties of ScN(001)," J. Appl. Phys. 90, 1809 (2001). pdf doi

19. J. D'Arcy-Gall, D. Gall, I. Petrov, P. Desjardins, J. E. Greene, "Quantitative C Lattice Site Distributions in Epitaxial Ge1-yCy/Ge(001) layers," J. Appl. Phys., 90, 3910 (2001). pdf doi

18. C.-S. Shin, D. Gall, Y.-W. Kim, P. Desjardins, I. Petrov, J. E. Greene, M. Oden, and L. Hultman, "Epitaxial NaCl-Structure d-TaNx(001): Electronic Transport Properties, Elastic Modulus, and Hardness vs N/Ta Ratio," J. Appl. Phys. 90, 2879 (2001). pdf doi

 

2000

17. N. Finnegan, R. T. Haasch, D. Gall, S. Kodambaka, J. E. Greene, and I. Petrov, "A Comparison of Auger Electron Spectra from Stoichiometric Epitaxial TiN(001) after (1) UHV Cleaving and (2) Ar+ Sputter Etching", Surf. Sci. Spectra 7, 93 (2000). pdf doi

16. D. Gall, J. D'Arcy-Gall, and J. E. Greene, "C Incorporation in Ge: An Ab Initio Study", Phys. Rev. B. 62, 7723 (2000). pdf doi

15. D. Gall, R. T. Haasch, N. Finnegan, T.-Y. Lee, C.-S. Shin, E. Sammann, J. E. Greene, and I. Petrov, "In-situ X-ray Photoelectron, Ultraviolet Photoelectron, and Auger Electron Spectroscopy from First-Row Transition-Metal Nitrides: ScN, TiN, VN, and CrN", Surf. Sci. Spectra 7, 167 (2000). pdf doi

14. J. D'Arcy-Gall, D. Gall, P. Desjardins, I. Petrov, and J. E. Greene, "Role of Fast Sputtered Particles During Sputter Deposition: Growth of Epitaxial Ge0.99C0.01/Ge(001)", Phys. Rev. B. 62, 11203 (2000). pdf doi

13. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial ScN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of as Deposited Layers", Surf. Sci. Spectra 7, 169 (2000). pdf doi

12. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial ScN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers", Surf. Sci. Spectra 7, 178 (2000). pdf doi

11. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial TiN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of as Deposited Layers", Surf. Sci. Spectra 7, 193 (2000). pdf doi

10. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial TiN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers", Surf. Sci. Spectra 7, 204 (2000). pdf doi

9. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial VN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of as Deposited Layers", Surf. Sci. Spectra 7, 221 (2000). pdf doi

8. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial VN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers", Surf. Sci. Spectra 7, 233 (2000). pdf doi

7. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial CrN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of as Deposited Layers", Surf. Sci. Spectra 7, 250 (2000). pdf doi

6. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial CrN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers", Surf. Sci. Spectra 7, 262 (2000). pdf doi

 

1999

5. C.-S. Shin, D. Gall, P. Desjardins, A. Vailionis, H. Kim, I. Petrov, and J. E. Greene, "Growth and Physical Properties of Epitaxial Metastable Cubic TaN(001)," Appl. Phys. Lett. 75, 3808 (1999). pdf doi

4. D. Gall, I. Petrov, P. Desjardins, and J. E. Greene, "Microstructural Evolution and Poisson Ratio of Epitaxial ScN Grown on TiN(001)/MgO(001) by Ultra-High Vacuum Reactive Magnetron Sputter Deposition," J. Appl. Phys. 86, 5524 (1999). pdf doi

 

1998

3. D. Gall, I. Petrov, N. Hellgren, L. Hultman, J.-E. Sundgren, and J. E. Greene, "Growth of Poly- and Single-Crystal ScN on MgO(001): Role of Low-Energy N2+ Irradiation in Determining Texture, Microstructure Evolution, and Mechanical Properties," J. Appl. Phys. 84, 6034 (1998). pdf doi

2. D. Gall, I. Petrov, L. D. Madsen, J.-E. Sundgren, and J. E. Greene, "Microstructure and Electronic Properties of the Refractory Semiconductor ScN Grown on MgO(001) by Ultra-High Vacuum Reactive Magnetron Sputter Deposition," J. Vac. Sci. Tech. A 16, 2411 (1998). pdf doi

 

1996

1. D. Gall, R. Gampp, H. P. Lang, and P. Oelhafen, "Pulsed Plasma Deposition of Chromium Oxide/Chromium-Cermet Coatings," J. Vac. Sci. Tech. A 14, 374 (1996). pdf doi

 

PROCEEDING PAPERS

 

7. D. Gall, Atharv Jog, Tianji Zhou, "Narrow interconnects: The most conductive metals," 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2020, pp. 32.3.1-32.3.4. pdf doi

6. D. Gall, "The Resistivity Bottleneck: The Search for New Interconnect Metals," 2020 IEEE VLSI Technology, Systems, and Applications, Hsinchu, Taiwan, 2020. pdf doi

5. D. Gall, A. Jog, E. Milosevic, "Narrow interconnects: The search for new metals," 2019 IEEE Semiconductor Interface Specialists Conference, San Diego, CA, 2019. pdf

4. Erik Milosevic, Sit Kerdsongpanya, Daniel Gall, "The Resistivity Size Effect in Epitaxial Ru(0001) and Co(0001) Layers," 2018 IEEE Nanotechnology Symposium (ANTS), Albany, NY, 2018, pp. 1-5. pdf doi

3. Baiwei Wang and Daniel Gall, "A new semiconductor: Ti0.5Mg0.5N(001)," 2018 IEEE Nanotechnology Symposium (ANTS), Albany, NY, 2018, pp. 1-5. pdf doi

2. E. Milosevic, V. Kamineni, X. Zhang, H. Dixit, H. Huang, R. Southwick, C. Janicki, N. Lanzillo, D. Gall, M. V. Raymond, "Validity and Application of the TCR Method to MOL Contacts," 2018 IEEE International Interconnect Technology Conference (IITC), Santa Clara, CA, 2018, pp. 36-38. pdf doi

1. Daniel Gall, "Metals for Low-Resistivity Interconnects," 2018 IEEE International Interconnect Technology Conference (IITC), Santa Clara, CA, 2018, pp. 157-159. pdf doi

 

Book Chapters

1.      D. Gall, "Nanopipes in Transition Metal Nitrides," in Encyclopedia of Nanoscience and Technology, edited by N.S. Nalwa (American Scientific Publishers, Los Angeles, 2004), Vol. 7, p.219-227.

2.      D. Gall, "Nanostructured Transition-Metal Nitride Layers", in Engineering Thin Films and Nanostructures with Ion Beams, edited by Emile J. Knystautas, Series Optical Engineering, Vol. 95 (CRC Press, Boca Raton FL, 2005).

3.      D. Gall, "Materials Processing: Vapor deposition techniques", in Encyclopedia of Condensed Matter Physics, edited by Franco Bassani, Jerry Liedl, and Peter Wyder (Academic Press/Elsevier, Oxford, UK, 2005).

 

Patents

1.      "Method for forming an epitaxial cobalt silicide layer on MOS devices", US Patent 6,797,598, inventors: C.W. Lim, C.-S. Shin, D. Gall, I. Petrov, and J.E. Greene, issued September 28, 2004.

2.      "Pore formation by in situ etching of nanorod PEM fuel cell electrodes," US Patent 8,980,502, inventors: M.D. Gasda, G.A. Eisman, and D. Gall, issued March 17, 2015.