Christian M. Wetzel

 

List of Citations

http://scholar.google.com/citations?user=DyBaCscAAAAJ

 

List of Publications

http://orcid.org/0000-0002-6055-0990

http://www.researcherid.com/rid/O-4017-2014

 

Editing and co-editing of books

 

1.      GaN, AlN, InN, and their Alloys. Eds. C. Wetzel, B. Gil, M. Kuzuhara, and M. Manfra, Proc. Mat. Res. Soc. Symp. Vol. 831, (The Materials Research Society, Warrendale PA, USA, 2005) (ISBN: ISBN: 1-55899-779-2). Hardcover, xix+784 pages. http://www.cambridge.org/us/academic/subjects/engineering/materials-science/gan-ain-inn-and-their-alloys-volume-831 PREPRINT

2.      GaN and Related Alloys 2002. Eds. C. Wetzel, E.T. Yu, J.S. Speck, A. Rizzi, and Y. Arakawa, Proc. Mat. Res. Soc. Symp. Vol. 743, (The Materials Research Society, Warrendale PA, USA, 2003) (ISBN: ISBN: 1-55899-680-X). Hardcover, 862 pages. http://www.cambridge.org/us/academic/subjects/engineering/materials-science/gan-and-related-alloys-2002-volume-743 PREPRINT

3.      GaN and Related Alloys 2000. Eds. C. Wetzel, M.S. Shur, U.K. Mishra, B. Gil, and K. Kishino, Proc. Mat. Res. Soc. Symp. Vol. 639, (The Materials Research Society, Warrendale PA, USA, 2001) (ISBN: 1-55899-549-8). Hardcover, 967 pages. http://www.cambridge.org/us/academic/subjects/engineering/materials-science/gan-and-related-alloys-2000-volume-639 PREPRINT

4.      Properties, Synthesis, Characterization, and Applications of Gallium Nitride and Related Semiconductors Eds. J. Edgar, T.S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, IEE, London, UK, 1999) (ISBN 0 85296 953 8). Hardcover, 830 pages. http://www.amazon.com/exec/obidos/tg/detail/-/0852969538/qid=1081385574/sr=1-1/ref=sr_1_1/104-3352976-0435101?v=glance&s=books PREPRINT

 

Publications in book chapters

 

1.      "Piezoelectric Effect in Group-III Nitride-Based Heterostructures and Quantum Wells," in "III-Nitride Semiconductors," T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki, Vol 16: Applications and Devices, edited by E.T. Yu and M.O. Manasreh (Taylor & Francis New York 2003) p. 399-438. http://www.amazon.com/Nitride-Semiconductors-Optoelectronic-Properties-Superlattices/dp/1560329742/sr=8-3/qid=1168379446/ref=sr_1_3/104-5262447-1080743?ie=UTF8&s=books PREPRINT

2.      "Electric Fields in Polarized GaInN/GaN Heterostructures," in "III-Nitride Semiconductors," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki, Vol 14: Optical Properties II, edited by M.O. Manasreh and H.X. Jiang (Taylor & Francis New York 2002) p. 219-258. http://www.amazon.com/III-Nitride-Semiconductors-Optoelectronic-Properities-Superlattices/dp/1560329734/sr=8-3/qid=1168379645/ref=sr_1_3/104-5262447-1080743?ie=UTF8&s=books PREPRINT

3.      "O, C, and Other Unintentional Impurities in GaN and Related Compounds," in "Properties, Synthesis, Characterization, and Applications of Gallium Nitride and Related Semiconductors," C. Wetzel and I. Akasaki; Eds. J. Edgar, T.S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, IEE, London, UK, 1999). p. 284-294. http://www.amazon.com/exec/obidos/tg/detail/-/0852969538/qid=1081385574/sr=1-1/ref=sr_1_1/104-3352976-0435101?v=glance&s=books PREPRINT

4.      "Raman and IR studies of InN," in "Properties, Synthesis, Characterization, and Applications of Gallium Nitride and Related Semiconductors," C. Wetzel and I. Akasaki;  Eds. J. Edgar, T.S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, IEE, London, UK, 1999) p.121-122. http://www.amazon.com/exec/obidos/tg/detail/-/0852969538/qid=1081385574/sr=1-1/ref=sr_1_1/104-3352976-0435101?v=glance&s=books PREPRINT

5.      "Raman and IR studies of GaN," in "Properties, Synthesis, Characterization, and Applications of Gallium Nitride and Related Semiconductors," C. Wetzel and I. Akasaki; Eds. J. Edgar, T.S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, IEE, London, UK, 1999) p.52-57. http://www.amazon.com/exec/obidos/tg/detail/-/0852969538/qid=1081385574/sr=1-1/ref=sr_1_1/104-3352976-0435101?v=glance&s=books PREPRINT

6.      "Raman and IR Studies of AlGaN," in "Properties, Synthesis, Characterization, and Applications of Gallium Nitride and Related Semiconductors," C. Wetzel and I. Akasaki; Eds. J. Edgar, T.S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, IEE, London, UK, 1999) p.143-146. http://www.amazon.com/exec/obidos/tg/detail/-/0852969538/qid=1081385574/sr=1-1/ref=sr_1_1/104-3352976-0435101?v=glance&s=books PREPRINT

 

Publications in refereed archival journals and conference proceedings

 

  1. "Atomic-Scale Phase Transition of Epitaxial GaN on Nanostructured Si(001): Activation and Beyond " S.C. Lee, Y.B. Jiang, M.T. Durniak, C.J.M. Stark, T. Detchprohm, C. Wetzel, S.R.J. Brueck, Cryst. Growth Des., 16(4), 2183–2189, (2016) http://dx.doi.org/10.1021/acs.cgd.5b01845 PREPRINT
  2. "Green Emitting Cubic GaInN/GaN Quantum Well Stripes on Micropatterned Si(001) and their Strain Analysis”, M.T. Durniak, A.S. Bross, D. Elsaesser, A. Chaudhuri, M.L. Smith, A.A. Allerman, S.C. Lee, S.R.J. Brueck, and C. Wetzel, Adv. Electronic Mater. 2, 1500327 (2016) http://dx.doi.org/10.1002/aelm.201500327 PREPRINT
  3. "Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition", S.C. Lee, N. Youngblood, Y.B. Jiang, E.J. Peterson, C.J.M. Stark, T. Detchprohm, C. Wetzel, and S.R.J. Brueck. Appl. Phys. Lett. 107, 231905 (2015). http://dx.doi.org/10.1063/1.4936772 PREPRINT
  4. "Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing", A. Redondo-Cubero, K. Lorenz, E. Wendler, S. Magalhaes, E. Alves, D. Carvalho, T. Ben, F. Morales, R. Garcia, K. O'Donnell, C. Wetzel, Nanotechnology; 26(42) 425703 (2015). http://dx.doi.org/10.1088/0957-4484/26/42/425703 PREPRINT
  5. "Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen", Marco Sousa, Teresa Esteves, Nabiha Ben Sedrine, Joana Rodrigues, Marcio Lourenço, Andres Redondo-Cubero, Eduardo Alves, Kevin O’Donnell, Michal Bockowski, Christian Wetzel, Maria Correia, Katharina Lorenz, and Teresa Monteiro, Scientific Reports 5, 9703, (2015). http://dx.doi.org/10.1038/srep09703 PREPRINT
  6. "High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal", Zongda Li, J. Waldron, Sauvik Chowdhury, L. Zhao, T. Detchprohm, C. Wetzel, R.F. Karlicek, and T.P. Chow, Phys. Stat. Sol. A 212(5), 1110–1115, (2015), http://dx.doi.org/10.1002/pssa.201431660 PREPRINT
  7. "Quantitative chemical mapping of InGaN quantum wells from calibrated high-angle annular dark field micrographs", Daniel Carvalho, Francisco M. Morales, Teresa Ben, Rafael García, Andrés Redondo-Cubero, Eduardo Alves, Katharina Lorenz, Paul R. Edwards, Kevin Peter O’Donnell, and Christian Wetzel, Microscopy and Microanalysis, 21(4), 994-1005 (2015), http://dx.doi.org/10.1017/S143192761501301X PREPRINT
  8. "High 400oC operation temperature blue spectrum concentration solar junction in GaInN/GaN", Liang Zhao, Theeradetch Detchprohm, and Christian Wetzel, Appl. Phys. Lett. 105(24) 243903 (2014), http://dx.doi.org/10.1063/1.4904717 PREPRINT Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  9. "On the Reliable Analysis of Indium Mole Fraction in InxGa1-xN Quantum Wells using Atom Probe Tomography", James R. Riley, Theeradetch Detchprohm, Christian Wetzel, Lincoln J. Lauhon, Appl. Phys. Lett. 104, 152102 (2014), http://dx.doi.org/10.1063/1.4871510 PREPRINT Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  10. "Rare earth-free direct-emitting light emitting diodes for solid state lighting", C. Wetzel and T. Detchprohm, IEEE Transactions on Industrial Applications 50(2), 1469 - 1477 (2014), http://dx.doi.org/10.1109/TIA.2013.2279192 PREPRINT
  11. "Photoluminescence of GaInN/GaN multiple quantum well heterostructures on amorphous surface through metal buffer layers", Liang Chen, Theeradetch Detchprohm, Christian Wetzel, Gwo-Ching Wang, and Toh-Ming Lu, Nano Energy 5, 1 (2014), http://dx.doi.org/10.1016/j.nanoen.2014.01.007 PREPRINT
  12. "Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)", Christoph J. M. Stark, Theeradetch Detchprohm, S. C. Lee, Y.-B. Jiang, Steven R. J. Brueck, and Christian Wetzel, Appl. Phys. Lett. 103, 232107 (2013), http://dx.doi.org/10.1063/1.4841555 PREPRINT Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  13. "Monolithic Integration of Light Emitting Diodes and Power MOS Channel High Electron Mobility Transistors for Light-Emitting Power ICs in GaN on Sapphire Substrate", Z. Li, J. Waldron, T. Detchprohm, C. Wetzel, R. F. Karlicek, Jr., and T. P. Chow, Appl. Phys. Lett. 102, 192107 (2013), http://dx.doi.org/10.1063/1.4807125 PREPRINT Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  14. "Direct green LED development in nano-patterned epitaxy", Christian Wetzel and Theeradetch Detchprohm, Proc. SPIE. 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII 864104 (2013) http://dx.doi.org/10.1117/12.2007613 PREPRINT
  15. "Effects of oxygen thermal annealing treatment on formation of ohmic contacts to n-GaN", Wenting Hou, Theeradetch Detchprohm, and Christian Wetzel, Appl. Phys. Lett. 101(24), 242105 (2012), http://dx.doi.org/10.1063/1.4769965 PREPRINT Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  16. "Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction", Christoph J.M. Stark, Theeradetch Detchprohm, Liang Zhao, Tanya Paskova, Edward A. Preble, and Christian Wetzel, Appl. Phys. Lett. 101, 232106 (2012), http://dx.doi.org/10.1063/1.4769442 PREPRINT Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  17. "GaN-based Light Emitting Diode with Embedded SiO2 Pattern for Enhanced Light Extraction", Wenting Hou, Liang Zhao, Xiaoli Wang, Shi You, Theeradetch Detchprohm, and Christian Wetzel, Lester Eastman Conference on High Performance Devices (LEC) 2012, 1-4, (2012), http://dx.doi.org/10.1109/lec.2012.6410988 PREPRINT
  18. "a-Plane GaN Light Emitting Diodes on Self-Assembled Ni Nano-Islands", Xiaoli Wang, Wenting Hou, Liang Zhao, Shi You, Theeradetch Detchprohm, and Christian Wetzel, Lester Eastman Conference on High Performance Devices (LEC), 2012, 1-2, (2012), http://dx.doi.org/10.1109/lec.2012.6410990 PREPRINT
  19. "Evaluation of metal/indium-tin-oxide for transparent low-resistance contacts to p-type GaN", W. Hou, C. Stark, S. You, L. Zhao, T. Detchprohm, and C. Wetzel, Appl. Opt. 51, 5596-5600 (2012) http://dx.doi.org/10.1364/AO.51.005596 PREPRINT
  20. "Cubic GaInN/GaN multi-quantum wells for increased smart lighting system efficiency", C.J.M. Stark, T. Detchprohm, C. Wetzel, S.C. Lee, S.R.J. Brueck, Conference on Lasers and Electro-Optics (CLEO), CLEO Technical Digest, JTh4J.3, May 2012 http://dx.doi.org/10.1364/CLEO_AT.2012.JTh4J.3 PREPRINT
  21. "Preface: Phys. Status Solidi C 7–8/2011", C. Wetzel, and A. Khan, Phys. Stat. Sol. C, 8, 2009–2012 (2011), http://dx.doi.org/10.1002/pssc.201160121 PREPRINT
  22. "Photocurrent spectroscopy on GaInN/GaN multiple quantum well solar cell structures”, L. Zhao, W. Hou, Y. Li, T. Detchprohm, and C. Wetzel, Phys. Stat. Sol. C, 8, 2469–2472 (2011), http://dx.doi.org/10.1002/pssc.201001200 PREPRINT
  23. “The role of mesa size in nano-structured green AlGaInN light-emitting diodes”, C. J. M. Stark, T. Detchprohm, and C. Wetzel, Phys. Stat. Sol. C, 8, 2311–2314 (2011). http://dx.doi.org/10.1002/pssc.201001190 PREPRINT
  24. “Ridge-type AlGaInN-based laser diode structure by selective regrowth”, Wei Zhao, Theeradetch Detchprohm, Wenting Hou, Yufeng Li, and Christian Wetzel, Phys. Stat. Sol. A, 208(7), 1603–1606 (2011). http://dx.doi.org/10.1002/pssa.201001191 PREPRINT
  25. "Wavelength-Stable Rare Earth-Free Green Light-Emitting Diodes for Energy Efficiency", Christian Wetzel and Theeradetch Detchprohm, Optics Express 19(S4), A962-A971 (2011) doi:10.1364/OE.19.00A962. http://dx.doi.org/10.1364/OE.19.00A962 PREPRINT

26.  "Non-polar GaInN-based light-emitting diodes: an approach for wavelength-stable and polarized-light emitters", Theeradetch Detchprohm, Mingwei Zhu, Shi You, Liang Zhao, Wenting Hou, Christoph Stark, Christian Wetzel, Proc. SPIE. 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV 79540N (2011) http://dx.doi.org/10.1117/12.875208 PREPRINT

27.  "Phosphor-free white: the prospects for green direct emitters", Christian Wetzel and Theeradetch Detchprohm, Proc. SPIE. 8123, Eleventh International Conference on Solid State Lighting 812308 (2011) http://dx.doi.org/10.1117/12.899259 PREPRINT

28.  "Integration of n- and p-Contacts to GaN-Based Light Emitting Diodes," Wenting Hou, Theeradetch Detchprohm, and Christian Wetzel, Int. Journal of High Speed Electronics and Systems, 20(3), 521-525 (2011) http://dx.doi.org/10.1142/S0129156411006817 PREPRINT

29.  "Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire", Yufeng Li, Shi You, Mingwei Zhu, Liang Zhao, Wenting Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, Appl. Phys. Lett, 98(15), (April 2011). http://dx.doi.org/10.1063/1.3579255 PREPRINT Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. also Virtual Journal of Nanoscale Science & Technology, 23(16) (April 25, 2011).

30.  "Highly Polarized Green Light Emitting Diode in m-axis GaInN/GaN", Shi You, Theeradetch Detchprohm, Mingwei Zhu, Wenting Hou, Edward. A. Preble, Drew Hanser, Tanya Paskova, and Christian Wetzel, Appl. Phys. Exp. 3(10), 102103 (Oct 15, 2010). http://dx.doi.org/10.1143/APEX.3.102103 PREPRINT

31.  "Boosting Green GaInN/GaN Light Emitting Diode Performance by a GaInN Underlying Layer", Y. Xia, W. Hou, L. Zhao, M. Zhu, T. Detchprohm, and C. Wetzel, IEEE Trans. Electron Devices 57(10) 2639 - 2643 (2010). http://dx.doi.org/10.1109/TED.2010.2061233 PREPRINT

32.  "GaInN based Green Light Emitting Diode for Energy Efficient Solid State Lighting", T. Detchprohm, and C. Wetzel, J. Light Emitting Diodes, 2(1), F-XII-4 (April 2010). PREPRINT

33.  "Various Misfit Dislocations in Green and Yellow GaInN GaN Light Emitting Diodes", Mingwei Zhu, Shi You, Theeradetch Detchprohm, Tanya Paskova, Edward A. Preble, and Christian Wetzel, Phys. Stat. Sol. A 207(6), 1305-1308 (June 2010). http://dx.doi.org/10.1002/pssa.200983645. PREPRINT

34.  "Cyan and Green Light Emitting Diode on Non-Polar m-Plane GaN Bulk Substrate," Theeradetch Detchprohm, Mingwei Zhu, Shi Yu, Yufeng Li, Liang Zhao, Edward A. Preble, Lianghong Liu, Tanya Paskova, Drew Hanser, and Christian Wetzel, Phys. Stat. Sol. C 7(7-8), 2190-2192, (July 2010). http://dx.doi.org/10.1002/pssc.200983611. PREPRINT

35.  "Inclined Dislocation Pair Relaxation Mechanism in Homoepitaxial Green GaInN/GaN Light Emitting Diodes", Mingwei Zhu (朱明), Shi You (尤适), Theeradetch Detchprohm, Tanya Paskova, Edward A. Preble, Drew Hanser, and Christian Wetzel, Phys. Rev. B 81, 125325 (2010). http://dx.doi.org/10.1103/PhysRevB.81.125325PREPRINT

36.  "Wavelength-Stable Cyan and Green Light Emitting Diodes on Non-Polar m-Plane GaN Bulk Substrates", Theeradetch Detchprohm, Mingwei Zhu, Yufeng Li, Liang Zhao, Shi You, Christian Wetzel, Edward A. Preble, Tanya Paskova, and Drew Hanser, Appl. Phys. Lett. 96(5), 051101 (2010) http://dx.doi.org/10.1063/1.3299257PREPRINT Top 4 of the 20 most downloaded papers of February 2010 in Applied Physics Letters Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

37.  "GaN/ZnO and AlGaN/ZnO Heterostructure LEDs: Growth, Fabrication, Optical and Electrical Characterization", Julian Benz, Sebastian Eisermann, Peter J. Klar, Bruno K. Meyer, Theeradetch Detchprohm, and Christian M. Wetzel, in ZnO and Related Materials, J. Christen, L. Brillson, H. Fujioka, H. Hoe Tan, editors, Vol 1201 (The Materials Research Society, Warrendale PA) 1201-H01-08 (2009). http://dx.doi.org/10.1557/PROC-1201-H01-08  PREPRINT

38.  "Carrier localization and non-radiative recombination in yellow emitting InGaN quantum wells," T. Li, A. M. Fischer, Q. Y. Wei, F. A. Ponce, T. Detchprohm, and C. Wetzel, Applied Physics Letters 2010. Appl. Phys. Lett. 96, 031906 (2010); http://dx.doi.org/10.1063/1.3293298   PREPRINT Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. also Virtual Journal of Ultrafast Science, 9(2) (February 2010).

39.  "Junction Temperature, Spectral Shift, and Efficiency in GaInN-based Blue and Green Light Emitting Diodes," J. Senawiratne, A. Chatterjee, T. Detchprohm, W. Zhao, Y. Li, M. Zhu, Y. Xia, X. Li, J. Plawsky, and C. Wetzel, Thin Solid Films 518, 1732-1736 (2010). http://dx.doi.org/10.1016/j.tsf.2009.11.073   PREPRINT

40.  "Depth profile of donor-acceptor pair transition revealing its effect on the efficiency of green LEDs," Yong Xia, Yufeng Li, Theeradetch Detchprohm, and Christian Wetzel, Physica B: Physics of Condensed Matter 404, 4899-4902 (2009). http://dx.doi.org/10.1016/j.physb.2009.08.281   PREPRINT

41.  "Green LED development in polar and non-polar growth orientation", Christian Wetzel, Mingwei Zhu, Yufeng Li, Wenting Hou, Liang Zhao, Wei Zhao, Shi You, Christoph Stark, Yong Xia, Michael DiBiccari, and Theeradetch Detchprohm,  Ninth International Conference on Solid State Lighting, Proc. SPIE Vol. 7422, 742204 (Aug. 18, 2009). http://dx.doi.org/10.1117/12.829513  PREPRINT

42.  "Characterization of GaInN/GaN layers for green emitting laser diodes," C. Wetzel, Yufeng Li, J. Senawiratne, Mingwei Zhu, Yong Xia, S. Tomasulo, P.D. Persans, Lianghong Liu, D. Hanser, and T. Detchprohm, J. Cryst. Growth 311, 2942-2947 (2009) http://dx.doi.org/10.1016/j.jcrysgro.2009.01.067 PREPRINT

43.  "Growth and Characterization of Green GaInN-Based Light Emitting Diodes on Free-Standing Non-Polar GaN Templates," T. Detchprohm, M. Zhu, Y. Li, Y. Xia, L. Liu, D. Hanser, and C. Wetzel, J. Cryst. Growth 311, 2937-2941 (2009) http://dx.doi.org/doi:10.1016/j.jcrysgro.2009.01.060 PREPRINT 

44.  "Enhanced Device Performance of GaInN-Based Deep Green Light Emitting Diodes with V-Defect-Free Active Region", T. Detchprohm, M. Zhu, W. Zhao, Y. Wang, Y. Li, Y. Xia and C. Wetzel. Phys. Status Solidi C 6, No. S2, S840-S843 (2009). http://dx.doi.org/doi:10.1002/pssc.200880800  PREPRINT

45.  "Radiation effects on InGaN quantum wells and GaN simultaneously probed by ion beam-induced luminescence," J. W. Tringe, A. M. Conway, T. E. Felter, W. J. Moberly Chan, J. Castelaz, V. Lordi, Y. Xia, C. G. Stevens and C. Wetzel; IEEE Trans. Nucl. Sci. (No. TNS-00138-2008.R1), 55(6), 3633-3637 (2008). http://dx.doi.org/doi:10.1109/TNS.2008.2006169  PREPRINT

46.  "Superluminescence in Green Emission GaInN/GaN Quantum Well Structures under Pulsed Laser Excitation," Jayantha Senawiratne, Stephanie Tomasulo, Theeradetch Detchprohm, Mingwei Zhu, Yufeng Li, Wei Zhao, Yong Xia, Zihui Zhang, Peter Persans, Christian Wetzel; in Nitrides and Related Bulk Materials, edited by R. Kniep, F.J. DiSalvo, R. Riedel, Z. Fisk, and Y. Sugahara (Mater. Res. Soc. Symp. Proc. Volume 1040E, Warrendale, PA, 2008), 1040-Q05-05. http://dx.doi.org/10.1557/PROC-1040-Q05-05 PREPRINT

47.  "Structural Analysis in Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes," Mingwei Zhu, Theeradetch Detchprohm, Yong Xia, Wei Zhao, Yufeng Li, Jayantha Senawiratne, Shi You, Lianghong Liu, Edward A. Preble, Drew Hanser, Christian Wetzel; in Nitrides and Related Bulk Materials, edited by R. Kniep, F.J. DiSalvo, R. Riedel, Z. Fisk, and Y. Sugahara (Mater. Res. Soc. Symp. Proc. Volume 1040E, Warrendale, PA, 2008), 1040-Q03-02. http://dx.doi.org/10.1557/PROC-1040-Q03-02  PREPRINT

48.  "Light Emitting Diode Development on Polar and Non-Polar GaN Substrates," C. Wetzel, M. Zhu, J. Senawiratne, T. Detchprohm, P.D. Persans, L. Liu, E. A. Preble, and D. Hanser, J. Cryst. Growth 310, 3987-91 (2008) http://dx.doi.org/doi:10.1016/j.jcrysgro.2008.06.028. PREPRINT

49.  "Green Light Emitting Diodes on a-Plane GaN Bulk Substrates," Theeradetch Detchprohm, Mingwei Zhu, Yufeng Li, Yong Xia, Christian Wetzel, Edward A. Preble, Lianghong Liu, Tanya Paskova, and Drew Hanser, Appl. Phys. Lett. 92, 24119 (2008) http://dx.doi.org/doi:10.1063/1.2945664 PREPRINT Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

50.  "Green Light Emitting Diodes under Photon Modulation" Yufeng Li, Jayantha Senawiratne, Yong Xia, Mingwei Zhu, Wei Zhao, Theeradetch Detchprohm, Christian M Wetzel; in Nitrides and Related Bulk Materials, edited by R. Kniep, F.J. DiSalvo, R. Riedel, Z. Fisk, and Y. Sugahara (Mater. Res. Soc. Symp. Proc. Volume 1040E, Warrendale, PA, 2008), 1040-Q03-08. http://dx.doi.org/10.1557/PROC-1040-Q03-08  PREPRINT

51.  "Photon Modulated Electroluminescence of GaInN/GaN Multiple Quantum Well Light Emitting Diodes," Y. Li, J. Senawiratne, Y. Xia, W. Zhao, M. Zhu, T. Detchprohm, and C. Wetzel; Phys. Stat. Sol. 5(6), 2293 - 2295 (2008). http://dx.doi.org/doi:10.1002/pssc.200778713 PREPRINT

52.  "Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes," J. Senawiratne, Y. Li, M. Zhu, Y. Xia, W. Zhao, T. Detchprohm, A. Chatterjee, J.L. Plawsky, and C. Wetzel; J. Electron. Mater.37(5), 607-610 (2008).http://dx.doi.org/doi:10.1007/s11664-007-0370-7 PREPRINT

53.  "V-defect Analysis in Green and Deep Green Light Emitting Diode Structures," M. Zhu, T. Detchprohm, S. You, Y. Wang, Y. Xia, W. Zhao, Y. Li, J. Senawiratne, Z. Zhang, and C. Wetzel; Phys. Stat. Sol., 5(6), 1777 - 1779, (2008). http://dx.doi.org/doi:10.1002/pssc.200778635 PREPRINT

54.  "Junction Temperature Analysis of Green Light Emitting Diodes on GaN and Sapphire Substrates," J. Senawiratne, W. Zhao, T. Detchprohm, A. Chatterjee, Y. Li, M. Zhu, J. L. Plawsky and C. Wetzel; Phys. Stat. Sol. C 5 (6), 2247 - 2249, (2008). http://dx.doi.org/doi:10.1002/pssc.200778648 PREPRINT

55.  "Improved Performance of GaInN Based Deep Green Light Emitting Diodes through V-Defect Reduction," T. Detchprohm, M. Zhu, Y. Xia, Y. Li, W. Zhao, J. Senawiratne, and C. Wetzel; Phys. Stat. Sol. (c) 5(6), 2207 - 2209, (2008). http://dx.doi.org/doi:10.1002/pssc.200778566  PREPRINT

56.  "Very Strong Nonlinear Optical Absorption in Green GaInN/GaN Multiple Quantum Well Structures," W. Zhao, M. Zhu, Y. Xia, Y. Li, J. Senawiratne, S. You, T. Detchprohm, and C. Wetzel; Phys. Stat. Sol. (b) 245(5), 916-919 (2008). http://dx.doi.org/doi:10.1002/pssb.200778686 PREPRINT

57.  "Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy," M. Zhu, Y. Xia, W. Zhao, Y. Li, J. Senawiratne, T. Detchprohm, and C. Wetzel; J. Electron. Mater. 37(5), 641-645 (2008). http://dx.doi.org/doi:10.1007/s11664-008-0392-9 PREPRINT

58.  "Current and Optical Low-Frequency Noise of GaInN/GaN Green Light Emitting Diodes," S.L. Rumyantsev, C. Wetzel, and M.S. Shur; Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000I (22 June 2007). http://dx.doi.org/10.1117/12.724282 PREPRINT

59.  "Loss of Quantum Efficiency in Green Light Emitting Diode Dies at Low Temperature," Y. Li, W. Zhao, Y. Xia, M. Zhu, J. Senawiratne, T. Detchprohm, E.F. Schubert, and C. Wetzel; Proc. Mat. Res. Soc. Symp. Proc., Vol. 955 0955-I15-12 (2007). http://dx.doi.org/10.1557/PROC-0955-I15-12  PREPRINT

60.  "Low-Temperature Cathodoluminescence Mapping of Green, Blue, and UV GaInN/GaN LED Dies," Y. Xia, T. Detchprohm, J. Senawiratne, Y. Li, W. Zhao, M. Zhu and C. Wetzel; Mat. Res. Soc. Symp. Proc. Vol. 955 0955-I15-45 (2007). www.mrs.org/s_mrs/bin.asp?CID=7889&DID=194155. http://dx.doi.org/10.1557/PROC-0955-I15-45.PREPRINT

61.  "Optical and structural investigation on InGaN/GaN multiple quantum well light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition", Z. C. Feng; J. Chen; H. Tsai; J. Yang; P. Li; C. Wetzel; T. Detchprohm; J. Nelson; I. T. Ferguson, Proc. SPIE. 6337, Sixth International Conference on Solid State Lighting, 63370D (2006) . http://dx.doi.org/doi:10.1117/12.677653 PREPRINT

62.  "Temperature Dependence of the Quantum Efficiency in Green and Deep Green GaInN/GaN Light Emitting Diodes," Y. Li, W. Zhao, Y. Xia, M. Zhu, J. Senawiratne, T. Detchprohm, E.F. Schubert, and C. Wetzel; Phys. Stat. Sol. (c) 4, No. 7, 2784- 2787 (2007). http://dx.doi.org/doi:10.1002/pssc.200674750 PREPRINT

63.  "Low Temperature Electroluminescence of Green and Deep Green GaInN/GaN Light Emitting Diodes," Y. Li, W. Zhao, Y. Xia, M. Zhu, J. Senawiratne, T. Detchprohm, and C. Wetzel; Int. J. High Speed Electronics and Systems, 17(1), 25-28 (2007). http://dx.doi.org/doi:10.1142/9789812770332_0005  PREPRINT

64.  "Spatial Spectral Analysis in High Brightness GaInN/GaN Light Emitting Diodes," T. Detchprohm, Y. Xia, J. Senawiratne, Y. Li, M. Zhu, W. Zhao, Y. Xi, E.F. Schubert, and C. Wetzel; Int. J. High Speed Electronics and Systems, 17(1), 29-33 (2007). http://dx.doi.org/doi:10.1142/S0129156407004199 PREPRINT

65.  "Optical Properties of GaInN/GaN Multi-Quantum Well Structure Grown by Metalorganic Vapor Phase Epitaxy," J. Senawiratne, M. Zhu, W. Zhao, Y. Xia, Y. Li, T. Detchprohm, and C. Wetzel; Int. J. High Speed Electronics and Systems, 17(1), 81-84 (2007). http://dx.doi.org/doi:10.1142/S0129156407004266  PREPRINT

66.  "Radiation Damage Mechanisms for Luminescence in Eu-Doped GaN," J.W. Tringe, J.M. Castelaz, T.E. Felter, C.E. Talley, J.D. Morse, C. Wetzel, and C.G. Stevens; J. Appl. Phys. 101, 054902 (2007). http://dx.doi.org/doi:10.1063/1.2696527 PREPRINT

67.  "Optimization of high-quality AlN epitaxially grown on (000) sapphire by metal-organic vapor phase epitaxy," Y. A. Xi, K. X. Chen, F. W. Mont, Jong Kyu Kim, E. F. Schubert, C. Wetzel, W. Liu, X. Li, and J. A. Smart, J. Electronic Materials, 36(4), (2007). http://dx.doi.org/doi:10.1007/s11664-007-0099-3 PREPRINT

68.  "Dislocation Analysis in Homoepitaxial GaInN/GaN Light Emitting Diode Growth," T. Detchprohm, Y. Xia, Y. Xi, M. Zhu, W. Zhao, Y. Li, E.F. Schubert, L. Liu, D. Tsvetkov, D. Hanser, and C. Wetzel; J. Crystal Growth 298, 272-275 (2007). http://dx.doi.org/doi:10.1016/j.jcrysgro.2006.10.129 PREPRINT

69.  "The Quantum Efficiency of Green GaInN/GaN Light Emitting Diodes," W. Zhao, Y. Li, T. Detchprohm, and C. Wetzel; Phys. Stat. Sol. (c) 4, 9-12, (2007). http://dx.doi.org/doi:10.1002/pssc.200673580 PREPRINT

70.  "Wavelength-Resolved Low-Frequency Noise of GaInN/GaN Green Light Emitting Diodes," S.L. Rumyantsev, C. Wetzel, and M.S. Shur; J. Appl. Phys. 100, 084506, (2006). And may be found at http://dx.doi.org/doi:10.1063/1.2358409   PREPRINT Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. Also: Virtual J. Nanoscale Science & Technology 14(18) Oct 30, 2006. 

71.  "Very High Quality AlN Grown on (0001) Sapphire by Metal-Organic Vapor Phase Epitaxy," Y.A. Xi, K.X. Chen, F. Mont, J.K. Kim, C. Wetzel, E.F. Schubert, W. Liu, X. Li, and J.A. Smart; Appl. Phys. Lett. 89, 103106-8, (2006). And may be found at http://dx.doi.org/doi:DOI:10.1063/1.2345256   PREPRINT Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

72.  "Optical and Structural Properties of InGaN/GaN Multiple Quantum Well Structure Grown by Metalorganic Chemical Vapor Deposition," J.-H. Chen, Z.-C. Feng, H.-L. Tsai, J.-R. Yang, P. Li, C. Wetzel, T. Detchprohm, J. Nelson; Thin Solid Films, 498(1-2), 123-127, (2006). http://dx.doi.org/doi:10.1016/j.tsf.2005.07.241  

73.  "Ultrafast Carrier Dynamics and Recombination in Green Emitting InGaN MQW LED," A.N. Cartwright, M.C-K. Cheung, F. Shahedipour-Sandvik, J.R. Grandusky, M. Jamil, V. Jindal, S.B. Schujman, L.J. Schowalter, C. Wetzel, P. Li, T. Detchprohm, and J.S. Nelson; in "Solid-State Lighting Materials and Devices", Eds. F. Shahedipour-Sandvik, E.F. Schubert, B.K. Crone, H. Liu, Y-K. Su, Proc. Mat. Res. Soc. Symp. Vol. 916 DD4.10, (2006). http://dx.doi.org/10.1557/PROC-0916-DD04-10 PREPRINT

74.  "Analysis of Quantum Efficiency of GaInN/GaN Light Emitting Diodes in the Range of 390 - 580 nm," W. Zhao, Y. Li, Y. Xia, M. Zhu, T. Detchprohm, E.F. Schubert, and C. Wetzel; in "GaN, AlN, InN, and Related Materials," Eds. M. Kuball, T.H. Myers, J.M. Redwing, T. Mukai, Proc. Mat. Res. Soc. Symp. Vol. 892, FF12.2, (2006). http://dx.doi.org/10.1557/PROC-0892-FF12-02 PREPRINT

75.  "Charge Profiling of the p-AlGaN Electron Blocking Layer" Y. Xia, Y. Li, W. Zhao, M. Zhu, T. Detchprohm, E.F. Schubert, and C. Wetzel; in "AlGaInN Light Emitting Diode Structures in GaN, AlN, InN, and Related Materials," Eds. M. Kuball, T.H. Myers, J.M. Redwing, T. Mukai, Proc. Mat. Res. Soc. Symp. Vol. 892, FF19.3 (2006). http://dx.doi.org/10.1557/PROC-0892-FF19-03 PREPRINT

76.  "Time Resolved Charge Profiling of Polarization Dipoles in High Power 525 nm Green GaInN/GaN Light Emitting Structures," Y. Xia, Y. Li, Y. Ou, W. Zhao, M. Zhu, I. Yilmaz, T. Detchprohm, E.F. Schubert, and C. Wetzel; Phys. Stat. Sol. (a) 203(7), 1806-1810 (2006). http://dx.doi.org/doi:10.1002/pssa.200565284 PREPRINT

77.  "Internal Omni-Directional Reflector Using a Low Refractive Index Material for Light-Emitting Diodes" J.-Q. Xi, M. Ojha, W. Chow, C. Wetzel, T. Gessmann, E.F. Schubert, J.L. Plawsky, and W.N. Gill; 2005 Conference on Lasers and Electro-Optics (CLEO),  (IEEE Cat. No. 05TH8796), 1(1), 144-6 (2005). http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2005-CMI2

78.  "Development of High Power Green Light Emitting Diode Chips," C. Wetzel and T. Detchprohm; MRS Internet J. Nitride Semicond. Res. 10, 2 (2005). http://journals.cambridge.org/abstract_S1092578300000533  PREPRINT

79.  "Development of High Power Green Light Emitting Diode Dies in Piezoelectric GaInN/GaN," C. Wetzel, Y. Xia, T. Detchprohm, P. Li, and J.S. Nelson, in "Light-Emitting Diodes: Research, Manufacturing, and Applications IX." Proceedings of the SPIE, Vol. 5739, (International Society for Optical Engineering, Bellingham WA 2005).http://dx.doi.org/10.1117/12.602144 PREPRINT

80.  "Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures," Y. Xia, E. Williams, Y. Park, I. Yilmaz, J.M. Shah, E.F. Schubert, and C. Wetzel; In GaN, AlN, InN, and Their Alloys, Eds. C. Wetzel, B. Gil, M. Kuzuhara, M. Manfra, Proc. Mat. Res. Soc. Symp. Vol. 831, 233-8 (2005). http://dx.doi.org/10.1557/PROC-831-E3.38 PREPRINT

81.  "Optimization of Green and Deep Green GaInN/GaN Light Emitting Diodes," C. Wetzel, P. Li, T. Detchprohm, and J.S. Nelson; Phys. Stat. Sol. (c), 2(7) 2871-3 (2005). http://dx.doi.org/doi:10.1002/pssc.200461391 PREPRINT

82.  "Analysis of the Wavelength-Power Performance Roll-Off in Green Light Emitting Diodes," C. Wetzel, T. Detchprohm, P. Li, and J.S. Nelson; Phys. Stat. Sol. (c), 1(10) 2421-4 (2004). http://dx.doi.org/doi:10.1002/pssc.200405083 PREPRINT

83.  "GaInN/GaN Growth Optimization for High Power Green Light Emitting Diodes," C. Wetzel, T. Salagaj, T. Detchprohm, P. Li, and J.S. Nelson; Appl. Phys. Lett. 85(6), 866-8 (2004). And may be found at http://dx.doi.org/doi:10.1063/1.1779960  PREPRINT Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

84.  "Optical Transitions in Piezoelectrically Polarized GalnN/GaN Quantum Wells," C. Wetzel, J. Nelson, S. Kamiyama, H. Amano, I. Akasaki; J. Vac. Sci. Technol. B, 20(1), 216-8 (2002). http://dx.doi.org/doi:10.1116/1.1432966 PREPRINT

85.  "Optical Absorption in Polarized Ga1-xInxN/GaN Quantum Wells," C. Wetzel, S. Kamiyama, H. Amano, I. Akasaki; Jpn. J. Appl. Phys. Part 1, 41(1), 11-4 (2002). http://dx.doi.org/doi:10.1143/JJAP.41.11 PREPRINT

86.  "DX-Like Behavior of Oxygen in GaN," C. Wetzel, H. Amano, I. Akasaki, J.W. Ager, I. Grzegory, and B.K. Meyer; Physica B, 302-303, 23-38 (2001). http://dx.doi.org/doi:10.1016/S0921-4526(01)00402-1 PREPRINT

87.  "Quantized States in Homogeneous Polarized GaInN/GaN Quantum Wells," C. Wetzel, S. Kamiyama, H. Amano, and I. Akasaki; Springer Proceedings in Physics 87, 1541-1542 (2001). PREPRINT

88.  "Absorption Spectroscopy and Band Structure in Polarized GaN/AlxGa1-xN Quantum Wells," C. Wetzel, M. Kasumi, H. Amano, and I. Akasaki; Phys. Stat. Sol. A, 183 (1), 51-60 (2001). http://dx.doi.org/doi:10.1002/1521-396X(200101)183:1<51::AID-PSSA51>3.0.CO;2-T PREPRINT(International Workshop on Light-Matter Coupling in Nitrides, Saint-Nectaire, France, 8-12 Oct. 2000).

89.  "Defect and Stress Control of AlGaN and Fabrication of High-Efficiency UV-LED," H. Amano, M. Iwaya, S. Nitta, S. Terao, R. Nakamura, T. Ukai, S. Saitoh, S. Kamiyama, C. Wetzel, and I. Akasaki; In GaN and Related Alloys 2000, Eds. C. Wetzel, M.S. Shur, U.K. Mishra, B. Gil, K. Kishino, Proc. Mat. Res. Soc. Symp. Vol. 639, G12.7 (2001). http://dx.doi.org/10.1557/PROC-639-G12.7 PREPRINT

90.  "Excitation Spectroscopy and Level Assignment in Ga1-xInxN/GaN Quantum Wells," C. Wetzel, S. Kamiyama, H. Amano, and I. Akasaki; Proc. Int. Workshop on Nitride Semiconductors (The Institute of Pure and Applied Physics) Conf. Series 1, 510-515 (2001). PREPRINT

91.  "Quantized States in Ga1-xInxN/GaN Heterostructures and the Model of Polarized Homogeneous Quantum Wells," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; Phys. Rev. B 62(20), R13302-5 (2000). http://dx.doi.org/doi:10.1103/PhysRevB.62.R13302 PREPRINT

92.  "Localized Vibrational Modes in GaN:O Tracing the Formation of Oxygen DX-Like Centers Under Hydrostatic Pressure," C. Wetzel, H. Amano, I. Akasaki, J.W. Ager III, I. Grzegory, M. Topf, and B.K. Meyer; Phys. Rev. B 61, 8202-8206 (2000). http://dx.doi.org/doi:10.1103/PhysRevB.61.8202 PREPRINT

93.  "Anomalous Features in the Optical Properties of Al1-xInxN on GaN Grown by Metal Organic Vapor Phase Epitaxy," S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Appl. Phys. Lett. 76(7), 876-8, (2000). The following article appeared in Appl. Phys. Lett. 76(7), 876-8, (2000). And may be found at  http://dx.doi.org/doi:10.1063/1.125615  PREPRINT Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

94.  "Electric Field Strength, Polarization Dipole, and Multi-Interface Bandoffset in GaInN/GaN Quantum Well Structures," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; Phys. Rev. B 61, 2159-63 (2000). http://dx.doi.org/doi:10.1103/PhysRevB.61.2159 PREPRINT

95.  "Discrete Stark-Like Ladder in Piezoelectric GaInN/GaN Quantum Wells," C. Wetzel, M. Kasumi, T. Detchprohm, T. Takeuchi, H. Amano, and I. Akasaki; Phys. Stat. Sol. (b) 216, 399-403 (1999). http://dx.doi.org/10.1002/(SICI)1521-3951(199911)216:1<399::AID-PSSB399>3.0.CO;2-P PREPRINT ICNS3 Montpellier, France 1999

96.  "Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; MRS Internet J. Nitride Semicond. Res. 5S1, W12.4 (2000). In GaN and Related Alloys Eds. H. Amano, R. Feenstra, T. Myers, M. Shur, Proc. Mat. Res. Soc. Symp. Vol. 595, W.12.4.1-12. http://dx.doi.org/10.1557/PROC-595-F99W12.4 PREPRINT

97.  "Piezoelectric Polarization in GaInN/GaN Heterostructures and some Consequences for Device Design," C. Wetzel, H. Amano, and I. Akasaki; Jpn. J. Appl. Phys. Part 1 39(4B), 2425-7 (2000). http://dx.doi.org/doi:10.1143/JJAP.39.2425 PREPRINT SSDM Tokyo 1999

98.  "Piezoelectric Polarization in the Radiative Centers of GaInN/GaN Quantum Wells and Devices," C. Wetzel, T. Detchprohm, T. Takeuchi, H. Amano, and I. Akasaki; J. Electronic Materials 29(3), 252-255 (2000). http://dx.doi.org/10.1007/s11664-000-0058-8 EMC41 Santa Barbara 1999 PREPRINT

99.  "Nitride-Based Laser Diodes Using Thick n-AlGaN Layers," T. Takeuchi, T. Detchprohm, M. Iwaya, N. Iwaya, K. Isomura, K. Kimura, M. Yamaguchi, S. Yamaguchi, C. Wetzel, H. Amano, I. Akasaki, Y.W. Kaneko, R. Shioda, S. Watanabe, T. Hidaka, Y. Yamaoka, Y.S. Kaneko, and N. Yamada; J. Electronic Materials 29(3), 302-5 (2000). http://dx.doi.org/10.1007/s11664-000-0067-7 PREPRINT EMC41 Santa Barbara 1999

100.                      "Control of Dislocations and Stress in AlGaN on Sapphire Using Low Temperature Interlayers," H. Amano, M. Iwaya, N. Hayashi, T. Kashima, S. Nitta, C. Wetzel, and I. Akasaki; Phys. Stat. Sol. (b) 216, 683-9 (1999). http://dx.doi.org/10.1002/(SICI)1521-3951(199911)216:1<683::AID-PSSB683>3.0.CO;2-4 PREPRINT

101.                      "Correlation of Vibrational Modes and DX-Like Centers in GaN:O," C. Wetzel, H. Amano, I. Akasaki, J.W. Ager III, M. Topf, and B.K. Meyer; Physica B; 273-274, 109-12 (1999). http://dx.doi.org/doi:10.1016/S0921-4526(99)00418-4 PREPRINT

102.                      "Structural and Optical Properties of Al1-xInxN Grown by Metal Organic Vapor-Phase Epitaxy," S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Proc. of the 18th Electronic Materials Symposium, Shirahama-shi, Wakayama-ken, June 30 - July 2, 1999. PREPRINT

103.                      "Structural Properties of InN on GaN Grown By Metal Organic Vapor-Phase Epitaxy," S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; J. Appl. Phys. 85(11), 7682-8, (1999). http://dx.doi.org/doi:10.1063/1.370571 PREPRINT

104.                      "Improvement of Crystalline Quality of GaN, AlGaN and AlN on Sapphire Using Low Temperature Interlayers," H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, T. Takeuchi, C. Wetzel, and I. Akasaki; MRS Internet J. Nitride Semicond. Res. 4S1, G10.1 (1999). In GaN and Related Alloys Eds. S.J. Pearton, C. Kuo, T. Uenoyama, A.F. Wright, Proc. Mat. Res. Soc. Symp. Vol. 537, G10.1 (1999). http://dx.doi.org/10.1557/PROC-537-G10.1 PREPRINT  

105.                      "Piezoelectric Stark-Like Ladder in GaN/GaInN/GaN Heterostructures," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; Jpn. J. Appl. Phys. 38(2B) Part 2 L163-5 (1999). http://dx.doi.org/doi:10.1143/JJAP.38.L163 PREPRINT

106.                      "GaN-Based Laser Diode With Focused Ion Beam-Etched Mirrors," C. Ambe, T. Takeuchi, H. Katoh, K. Isomura, T. Satoh, R. Mizumoto, S. Yamaguchi, C. Wetzel, H. Amano, I. Akasaki, Y. Kaneko, and N. Yamada; Materials Science & Engineering B, B59(1-3), 382-5 (1999). http://dx.doi.org/doi:10.1016/S0921-5107(98)00349-3  PREPRINT E-MRS Strasbourg 1998

107.                      "Piezoelectric Effects in GaInN/GaN Heterostructures and Quantum Wells," C. Wetzel, T. Takeuchi, H. Kato, H. Amano, and I. Akasaki; Proc. of the 24th Int. Conf. on the Physics of Semiconductors, Jerusalem, Israel, August 2-8, 1998. (World Scientific, Singapore 1999). PREPRINT

108.                      "Crystal Growth of Lattice-Matched Al1-xInxN to GaN and the Relation of Strong Bandgap Bowing to the Microscopic Structure," S. Yamaguchi, M. Kariya, S. Nitta, R. Mizumoto, C. Anbe, S. Ikuta, M. Katsuragawa, T. Wauke, H. Kato, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Proc. of the 24th Int. Conf. on the Physics of Semiconductors, Jerusalem, Israel, August 2-8, 1998. (World Scientific, Singapore 1999). PREPRINT

109.                      "Defect and Stress Control in Group-III Nitrides Using Low Temperature Interlayers,"  H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, H. Katoh, T. Takeuchi, T. Detchprohm, S. Yamaguchi, C. Wetzel, and I. Akasaki; Proc. of the Third Symposium on Atomic-Scale Surface and Interface Dynamics, Fukuoka, Japan, March 4-5, (1999).

110.                      "Piezoelectric Level Splitting in GaInN/GaN Quantum Wells," in GaN and Related Alloys. C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; Eds. S.J. Pearton, C. Kuo, T. Uenoyama, A.F. Wright, Proc. Mat. Res. Soc. Symp. Vol. 537, G3.66 (1999). MRS Internet J. Nitride Semicond. Res. 4(1), G3.66 (1999). http://dx.doi.org/10.1557/PROC-537-G3.66 PREPRINT

111.                      "Piezoelectric Franz-Keldysh Effect in Strained GaInN/GaN Heterostructures," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; J. Appl. Phys. 85(7), 3786-91 (1999). http://dx.doi.org/doi:10.1063/1.369749 PREPRINT

112.                      "Optical Band Gap in Ga1-xInxN (0<x<0.2) on GaN by Photoreflection Spectroscopy," C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Katoh, H. Amano, and I. Akasaki; Appl. Phys. Lett. 73(14), 1994-6 (1998). And may be found at  http://dx.doi.org/doi:10.1063/1.122346 PREPRINT Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

113.                      "On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect," C. Wetzel, S. Nitta, T. Takeuchi, S. Yamaguchi, H. Amano and I. Akasaki; MRS Internet J. Nitride Semicond. Res. Res. 3, 31 (1998). http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=9209943&fulltextType=RA&fileId=S1092578300001034 http://dx.doi.org/10.1557/S1092578300001034 PREPRINT

114.                      "Piezoelectric Field Induced Transitions in GaInN/GaN Multiple Quantum Wells," C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Katoh, H. Amano, and I. Akasaki; in Blue Laser and Light Emitting Diodes II. eds. K. Onabe, K. Hiramatsu, K. Itaya, Y. Nakano, Tokyo, Japan : Ohmsha, 1998. p. 646-9. PREPRINT ISBLLED-2

115.                      "Structural Properties of Al1-xInxN Ternary Alloys on GaN Grown by Metalorganic Vapor-Phase Epitaxy," M. Kariya, S. Nitta, S. Yamaguchi, H. Kato, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Jpn. J. Appl. Phys. 37, L697-9 (1998). http://dx.doi.org/doi:10.1143/JJAP.37.L697 PREPRINT

116.                      "Structural and Optical Properties of AlInN and AlGaInN on GaN Grown by Metalorganic Vapor Phase Epitaxy," S. Yamaguchi, M. Kariya, S. Nitta, H. Kato, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; J. of Crystal Growth 195(1-4), 309-13 (1998). http://dx.doi.org/doi:10.1016/S0022-0248(98)00629-0 PREPRINT

117.                      "Piezoelectric Effect in Group III Nitride Based Quantum Well Structure," T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Amano, and I. Akasaki; Proceedings of the Second Symposium on Atomic-Scale Surface and Interface Dynamics, Toshimaku, Tokyo, 26-27 February, 1988.

118.                      "In-Situ TEM Monitoring of the Crystallization Process of Low Temperature Deposited Nitride Buffer Layers on Sapphire and the Effect of Insertion of Low Temperature Deposited Buffer Layer on the Reduction of Threading Dislocations in OMVPE Grown GaN on Sapphire," H. Amano, T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Katoh, and I. Akasaki; Proc. of the Second Symp. on Atomic-Scale Surface and Interface Dynamics, February 1998, pp. 199-203, (1998).

119.                      "Piezoelectric Quantization in GaInN Thin Films and Multiple Quantum Well Structures," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; in Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, Eds. S. DenBaars, J. Palmour, M. Shur, and M. Spencer, Proc. Mat. Res. Soc. Symp. Vol. 512, 181-6 (1998). http://dx.doi.org/10.1557/PROC-512-181 PREPRINT

120.                      "Observation of Photoluminescence from Al1-xInxN Heteroepitaxial Films in the Blue-Green to Red Spectral Region Grown by Metalorganic Vapor Phase Epitaxy," S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Appl. Phys. Lett. 73, 830-1 (1998). http://dx.doi.org/doi:10.1063/1.122015 PREPRINT Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

121.                      "Determination of Piezoelectric Fields in GaInN Strained Quantum Wells Using the Quantum-Confined Stark Effect," T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, and N. Yamada; Appl. Phys. Lett. 73(12), 1691-3 (1998). The following article appeared in Appl. Phys. Lett. 73(12), 1691-3 (1998). And may be found at http://dx.doi.org/10.1063/1.122247 PREPRINT Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

122.                      "GaN Based Laser Diode with Focused Ion Beam Etched Mirror," H. Katoh, T. Takeuchi, C. Anbe, R. Mizumoto, S. Yamaguchi, C. Wetzel, H. Amano, I. Akasaki, Y. Kaneko, and N. Yamada; Jpn. J. Appl. Phys. 37, L444-6 (1998). http://dx.doi.org/doi:10.1143/JJAP.37.L444 PREPRINT

123.                      "Characterization of Crystalline Quality of GaN on Sapphire and Ternary Alloys on GaN," H. Amano, T. Takeuchi, S. Yamaguchi, C. Wetzel, and I. Akasaki; Trans. Inst. Electron. Inform. & Communic. Engineers C-II (J81-C-II) 65-71 (1998), in Japanese, Translation in Electronics and Communications in Japan, 81 (10), 48-54 (1998). http://dx.doi.org/10.1002/(SICI)1520-6432(199810)81:10%3c48::AID-ECJB6%3e3.0.CO;2-A http://www3.interscience.wiley.com/cgi-bin/abstract/30000171/ABSTRACT PREPRINT

124.                      "Optical Properties of GaInN/GaN Heterostructures and Quantum Wells," C. Wetzel, T. Takeuchi, S. Nitta, S. Yamaguchi, H. Amano, and I. Akasaki; in 1998 IEEE Semiconducting and Insulating Materials Conference (Inst. Electrical and Electronics Engineers, Inc. Piscataway 1999) p. 239-242. PREPRINT

125.                      "Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN," M. Iwaya, T. Takeuchi, S. Yamaguchi, C. Wetzel, H. Amano, and I. Akasaki; Jpn. J. Appl. Phys. 37, L316 (1998). http://dx.doi.org/doi:10.1143/JJAP.37.L316 PREPRINT

126.                      "Heteroepitaxy of Group-III Nitrides for Device Applications," H. Amano, T. Takeuchi, H. Sakai, S. Yamaguchi, C. Wetzel, and I. Akasaki; Mater. Sci. Forum 264-268, 1115 (1998) http://dx.doi.org/10.4028/www.scientific.net/MSF.264-268.1115.

127.                      "Localized Donors in GaN: Spectroscopy Using Large Pressures. Nitride Semiconductors," C. Wetzel, H. Amano, I. Akasaki, T. Suski, J.W. Ager, E.R. Weber, E.E. Haller, and B.K. Meyer; in Nitride Semiconductors Eds. F.A. Ponce, S.P. DenBaars, B.K. Meyer, S. Nakamura, and T. Strite, Proc. Mat. Res. Soc. Symp. Vol. 482, 489-500 (1998). http://dx.doi.org/10.1557/PROC-482-489 PREPRINT

128.                      "Structural Properties of Nitrides Grown by OMVPE on Sapphire Substrate," H. Amano, T. Takeuchi, S. Yamaguchi, S. Nitta, M. Kariya, M. Iwaya, C. Wetzel, and I. Akasaki; Nitride Semiconductors, in Nitride Semiconductors, Eds. F.A. Ponce, S.P. DenBaars, B.K. Meyer, S. Nakamura, and T. Strite, Proc. Mat. Res. Soc. Symp. Vol. 482, 479 (1998). http://dx.doi.org/10.1557/PROC-482-479 PREPRINT

129.                      "On the Nature of Radiative Recombination Processes in GaN," C. Wetzel, H. Amano, and I. Akasaki; in Compound Semiconductors 1997. Proc. IEEE 24th Int. Symp. on Compound Semiconductors. Eds. M. Melloch, M.A. Reed, New York, NY , USA, IEEE, 1998. p. 239-44 of xxvii+666 pp. PREPRINT

130.                      "Valenceband Splitting and Luminescence Stokes Shift in GaInN/GaN Thin Films and Multiple Quantum Well Structures," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; J. of Crystal Growth 189/190, 621-624 (1998). http://dx.doi.org/doi:10.1016/S0022-0248(98)00220-6  PREPRINT

131.                      "Future Challenges and Directions for Nitride Materials and Light Emitters," I. Akasaki and C. Wetzel; Proceedings of the IEEE. 85(11), 1750-1 (1997). http://dx.doi.org/10.1109/5.649652 PREPRINT

132.                      "Heteroepitaxy of Group-III Nitrides for Device Applications," H. Amano, T. Takeuchi, H. Sakai, S. Yamaguchi, C. Wetzel, and I. Akasaki; International Conference on Silicon Carbide, III-Nitrides and Related Materials, 1997, August 31 - September 5, 1997, Stockholm, Sweden.

133.                      "Pressure Induced Deep Gap State of Oxygen in GaN," C. Wetzel, T. Suski, J.W. Ager III, E.R. Weber, E.E. Haller, S. Fischer, B.K. Meyer, R.J. Molnar, and P. Perlin; Phys. Rev. Lett. 78, 3923-6 (1997). http://dx.doi.org/doi:10.1103/PhysRevLett.78.3923 PREPRINT Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

134.                      "X-Ray Photoelectron Diffraction Measurement of Hexagonal GaN Thin Films," R. Denecke, J. Morais, C. Wetzel, J. Liesegang, E.E. Haller, C.S. Fadley; in Gallium Nitride and Related Materials II, Eds. C.R. Abernathy, H. Amano, and J.C. Zolper, Proc. Mat. Res. Soc. Symp. Vol. 468, 263-8 (1997). http://dx.doi.org/10.1557/PROC-468-263 PREPRINT

135.                      "Electron - Phonon Scattering in Si Doped GaN," C. Wetzel, W. Walukiewicz, and J.W. Ager III; In III-V Nitrides, Eds. F. Ponce, T.D. Moustakas, I. Akasaki, and B. Monemar, Proc. Mat. Res. Soc. Symp. Vol. 449, 567-72 (1997). http://dx.doi.org/10.1557/PROC-449-567 PREPRINT

136.                      "Si in GaN -- on the Nature of the Background Donor," C. Wetzel, A.L. Chen, T. Suski, J.W. Ager III, W. Walukiewicz; Phys. Status Solidi (b) 198, 243 (1996). http://dx.doi.org/10.1002/pssb.2221980132 PREPRINT

137.                      "Properties of GaN Grown at High Rates on Sapphire and 6H-SiC," S. Fischer, C. Wetzel, W.L. Hansen, E.D. Bourret-Courchesne, B.K. Meyer, E.E. Haller; Appl. Phys. Lett. 69, 2716 (1996). http://dx.doi.org/doi:10.1063/1.117688 PREPRINT Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

138.                      "Strongly Localized Donor Level in Oxygen Doped Gallium Nitride," C. Wetzel, T. Suski, J.W. Ager III, W. Walukiewicz, S. Fischer, B.K. Meyer; 23rd Int. Conf. on the Physics of Semiconductors, Berlin, Germany, July 21-26, 1996 (Eds. M. Scheffler, R. Zimmermann, World Scientific, Singapore 1996) Vol. 4. p. 2929-32. PREPRINT

139.                      "Infrared Reflection of GaN and AlGaN Thin Film Heterostructures with AlN Buffer Layers," C. Wetzel, E.E. Haller, H. Amano, I. Akasaki; Appl. Phys. Lett. 68, 2547-9 (1996). And may be found at  http://dx.doi.org/doi:10.1063/1.116179 PREPRINT Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

140.                      "Dynamics of Bound-Exciton Luminescences From Epitaxial GaN," L. Eckey, J.-C. Holst, P. Maxim, R. Heitz, A. Hoffmann, I. Broser, B.K. Meyer, C. Wetzel, E.N. Mokhov, P.G. Baranov; Appl. Phys. Lett. 68, 415-7 (1996). And may be found at http://dx.doi.org/doi:10.1063/1.116703 PREPRINT Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

141.                      "Defect Studies of GaN Under Large Hydrostatic Pressure, in Gallium Nitride and Related Materials," C. Wetzel, S. Fischer, W. Walukiewicz, J. Ager III, E.E. Haller, I. Grzegory, S. Porowski, T. Suski; Eds. F. Ponce, R.D. Dupuis, S. Nakamura, and J.A. Edmond, Proc. Mat. Res. Soc. Symp. Vol. 395, 417 (1996). http://dx.doi.org/10.1557/PROC-395-417 PREPRINT  

142.                      "Fine Structure of the 3.42 eV Emission Band in GaN," S. Fischer, C. Wetzel, W. Walukiewicz, E.E. Haller; In Gallium Nitride and Related Materials, Eds. F. Ponce, R.D. Dupuis, S. Nakamura, and J.A. Edmond, Proc. Mat. Res. Soc. Symp. Vol. 395, 571 (1996). http://dx.doi.org/10.1557/PROC-395-571  PREPRINT

143.                      "Identification of Transition Metals in GaN," K. Pressel, R. Heitz, L. Eckey, I. Loa, P. Thurian, A. Hoffmann, B.K. Meyer, S. Fischer, C. Wetzel, E.E. Haller; Eds., in Gallium Nitride and Related Materials. F. Ponce, R.D. Dupuis, S. Nakamura, and J.A. Edmond, Proc. Mat. Res. Soc. Symp. Vol. 395, 491 (1996). http://dx.doi.org/10.1557/PROC-395-491  PREPRINT

144.                      "Carrier Localization of As-Grown n-Type Gallium Nitride Under Large Hydrostatic Pressure," C. Wetzel, W. Walukiewicz, E.E. Haller, J. Ager III, I. Grzegory, S. Porowski, T. Suski; Phys. Rev. B. 53, 1322-6 (1996). http://dx.doi.org/doi:10.1103/PhysRevB.53.1322 PREPRINT

145.                      "Optical Investigation of Deep Defects in GaN Epitaxial Layers Grown on 6H-SiC," K. Pressel, S. Nilsson, C. Wetzel, D. Volm, B.K. Meyer, I. Loa, P. Thurian, R. Heitz, A. Hoffmann, E.N. Mokhov, P.G. Baranov; Mater. Sci. Technol. 12, 90-3 (1996). http://dx.doi.org/10.1179/mst.1996.12.1.90 PREPRINT

146.                      "Strongly Localized Excitons in Gallium Nitride," C. Wetzel, S. Fischer, S. Krüger, E.E. Haller, R.J. Molnar, T.D. Moustakas, E.N. Mokhov, P.G. Baranov; Appl. Phys. Lett. 68, 2556-8 (1996). And may be found at http://dx.doi.org/doi:10.1063/1.116182 PREPRINT Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

147.                      "Electron Effective Mass and Nonparabolicity in Ga0.47In0.53As/InP Quantum Wells," C. Wetzel, R. Winkler, M. Drechsler, B.K. Meyer, U. Rössler, J. Scriba, J.P. Kotthaus, V. Härle, F. Scholz; Phys. Rev. B. 53, 1038-41 (1996). http://dx.doi.org/doi:10.1103/PhysRevB.53.1038 PREPRINT

148.                      "Optical Investigation of Deep Defects in GaN Epitaxial Layers Grown on 6H-SiC," K. Pressel, S. Nilsson, C. Wetzel, D. Volm, B.K. Meyer, I. Loa, P. Thurian, R. Heitz, A. Hoffmann, E.N. Mokhov, and P.G. Baranov; 1st International Conference on Materials for Microelectronics, Barcelona, Spain 17-19 October 1994, Mater. Sci. Technol. 12 90-3 (1996).

149.                      "Carrier Localization in Gallium Nitride," C. Wetzel, W. Walukiewicz, E.E. Haller, J. Ager III, A. Chen, S. Fischer, P. Yu, R. Jeanloz, I. Grzegory, S. Porowski, T. Suski, H. Amano, I. Akasaki; Mater. Sci. Forum 196-201, 31-6 (1995). PREPRINT

150.                      "Two-Dimensional Wannier Excitons - Effects of a Random Adiabatic Potential," Al.L. Efros, C. Wetzel, J.M. Worlock; Nuovo Cimento D. 17D, 1447-52 (1995). http://dx.doi.org/10.1007/BF02457225 PREPRINT

151.                      "On p-Type Doping in GaN - Acceptor Binding Energies," S. Fischer, C. Wetzel, E.E. Haller, B.K. Meyer; Appl. Phys. Lett. 67, 1298-300 (1995). http://dx.doi.org/doi:10.1063/1.114403 PREPRINT Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

152.                      "Effect of a Random Adiabatic Potential on the Optical Properties of Two-Dimensional Excitons," Al.L. Efros, C. Wetzel, J.M. Worlock; Phys. Rev. B 52, 8384-90 (1995). http://dx.doi.org/doi:10.1103/PhysRevB.52.8384 PREPRINT

153.                      "Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure," C. Wetzel, W. Walukiewicz, E.E. Haller, H. Amano, I. Akasaki; in Defect and Impurity Engineered Semiconductors and Devices, Eds. S. Ashok, J. Chevallier, I. Akasaki, N.M. Johnson, and B.L. Sopori, Proc. Mat. Res. Soc. Symp. Vol. 378, 509-14 (1995). http://dx.doi.org/10.1557/PROC-378-509 PREPRINT

154.                      "Time Resolved Photoluminescence Spectroscopy of GaN Epitaxial Layers," B.K. Meyer, D. Volm, C. Wetzel, L. Eckey, J.-Ch. Holst, P. Maxim, R. Heitz, A. Hoffmann,  I. Broser, E.N. Mokhov, P.G. Baranov, C. Qiu, and J.I. Pankove; in Defect and Impurity Engineered Semiconductors and Devices, Eds. S. Ashok, J. Chevallier, I. Akasaki, N.M. Johnson, and B.L. Sopori, Proc. Mat. Res. Soc. Symp. Vol. 378, 521-6 (1995). http://dx.doi.org/10.1557/PROC-378-521

155.                      "Optically Detected Cyclotron Resonance on GaAs/AlGaAs Quantum Wells and Quantum Wires," D.M. Hofmann, M. Drechsler, C. Wetzel, B.K. Meyer, F. Hirler, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann; Phys. Rev. B 52, 11,313-18 (1995). http://dx.doi.org/doi:10.1103/PhysRevB.52.11313  PREPRINT

156.                      "Recombination Dynamics in Strained In1-xGaxAs/InP-Quantum Well Structures," D.M. Hoffmann, H. Siegle, L. Eckey, B. Lummer, P. Thurian, R. Heitz, B.K. Meyer, C. Wetzel, D.M. Hofmann, V. Härle, F. Scholz, A. Kohl; Superlattices Microstruct. 15, 303-7 (1994). http://dx.doi.org/doi:10.1006/spmi.1994.1058 PREPRINT

157.                      "GaN Epitaxial Layers Grown on 6H-SiC by the Sublimation Sandwich Technique," C. Wetzel, D. Volm, B.K. Meyer, K. Pressel, S. Nilsson, E.N. Mokhov, P.G. Baranov; Appl. Phys. Lett. 65, 1033-5 (1994). http://dx.doi.org/doi:10.1063/1.112143 PREPRINT Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

158.                      "Effects of Microwave Modulation and Cyclotron Resonance on the Luminescence of GaAs/AlGaAs Quantum Wells and Wires," D.M. Hofmann, M. Drechsler, C. Wetzel, P. Emanuelsson, B.K. Meyer, F. Hirler, G. Abstreiter, G. Tränkle, G. Weimann; 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, Canada 15-19 August 1994). Ed. D.J. Lockwood (World Scientific, Singapore 1995) p. 1659-62.

159.                      "GaN on 6H-SiC -- Structural and Optical Properties." C. Wetzel, D. Volm, B.K. Meyer, K. Pressel, S. Nilsson, E.N. Mokhov, P.G. Baranov; in Diamond, SiC and Nitride Wide Bandgap Semiconductors, Eds. C.H. Carter, G. Gildenblat, S. Nakamura, and R.J. Nemanich, Proc. Mat. Res. Soc. Symp. Vol. 339, 453-8 (1994). http://dx.doi.org/10.1557/PROC-339-453

160.                      "Conduction-Band Spin Splitting of Type-I GaxIn1-xAs/InP Quantum Well," B. Kowalski, P. Omling, B.K. Meyer, D.M. Hofmann, C. Wetzel, V. Härle, F. Scholz, P. Sobkowicz; Phys. Rev. B 49, 14,786-9 (1994). http://dx.doi.org/doi:10.1103/PhysRevB.49.14786 PREPRINT

161.                      "Modulated Cyclotron Resonance in a Multi Quantum Well Structure of In0.53Ga0.47As/InP Induced by Interband and Exciton Excitation," S.C. Shen, W. Lu, M. von Ortenberg, C. Wetzel; Int. J. Infrared Millim. Waves, 15, 237-46 (1994). http://dx.doi.org/10.1007/BF02265887 PREPRINT

162.                      "The Conduction Band Spin Splitting in Type-I Strained and Unstrained (GaIn)As/InP Quantum Wells," P. Omling, B. Kowalski, B.K. Meyer, D.M. Hofmann, C. Wetzel, V. Härle, F. Scholz; Solid-State Electronics, 37, 669-72 (1994). http://dx.doi.org/doi:10.1016/0038-1101(94)90272-0   PREPRINT   (Sixth Int. Conf. on Modulated Semiconductor Structures, Garmisch-Partenkirchen, Germany, 23-27 Aug. 1993).

163.                      "Composition Dependence of the In-Plane Effective Mass in Lattice-Mismatched, Strained Ga1-xInxAs/InP Single Quantum Wells," B.K. Meyer, M. Drechsler, C. Wetzel, V. Härle, F. Scholz, H. Linke, P. Omling, P. Sobkowicz; Appl. Phys. Lett. 63, 657-9 (1993). http://dx.doi.org/doi:10.1063/1.109948 PREPRINT Copyright (1993) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

164.                      "Application of Microwave Detection of the Shubnikov-de Haas Effect in Two-Dimensional Systems," H. Linke, P. Omling, P. Ramvall, B.K. Meyer, M. Drechsler, C. Wetzel, R. Rudeloff, F. Scholz; J. Appl. Phys. 73, 7533-42 (1993). http://dx.doi.org/doi:10.1063/1.354001 PREPRINT

165.                      "Electron Effective Mass in Direct Bandgap GaAs1-xPx Alloys," C. Wetzel, B.K. Meyer, P. Omling; Phys. Rev. B 47, 15 588-92 (1993). http://dx.doi.org/doi:10.1103/PhysRevB.47.15588 PREPRINT

166.                      "Magneto-Transport Properties of Strained GaInAs/InP Single Quantum Wells," V. Härle, H. Bolay, J. Hugo, F. Scholz, B.K. Meyer, M. Drechsler, C. Wetzel, B. Kowalski, P. Omling; Proceedings of the 5th Int. Conf. on InP and Related Materials Paris, May 1993, (IEEE New York, NY) p. 191-4.

167.                      "Novel Applications of Contactless Characterization Techniques in Epitaxial Crystals and Quantum Well Structures," B.K. Meyer, C. Wetzel, M. Drechsler, A. Moll, H. Linke, P. Omling, F. Scholz; J. Crystal Growth, 128, 567-70 (1993). http://dx.doi.org/doi:10.1016/0022-0248(93)90387-C PREPRINT

168.                      "Magneto-Optical and Far-Infrared Optically Detected Cyclotron Resonance Determination of the Effective Mass in GaAs1-xPx," P. Omling, C. Wetzel, Al.L. Efros, B.K. Meyer; Physica B 184, 164-7 (1993). http://dx.doi.org/doi:10.1016/0921-4526(93)90342-4  PREPRINT (1993) (Proc. Yamada Conf. XXXIII on The Appl. of High Magnetic Fields in Semicond. Physics, Ed. N. Miura, Yamada Science Found. (1993)).

169.                      "Spin Dependent Recombination in Pt-Doped Silicon p-n Junctions," P. Christmann, C. Wetzel, B.K. Meyer, A. Asenov, A. Endrös; Appl. Phys. Lett. 60, 1857-9 (1992). http://dx.doi.org/doi:10.1063/1.107160 PREPRINT Copyright (1992) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

170.                      "Dependence on Quantum Confinement of the In-Plane Effective Mass in Ga0.47In0.53As/InP Quantum Well," C. Wetzel, Al.L. Efros, A. Moll, B.K. Meyer, P. Omling, P. Sobkowicz; Phys. Rev. B 45, 14,052-6 (1992). http://dx.doi.org/doi:10.1103/PhysRevB.45.14052 PREPRINT

171.                      "Observation of Forbidden D n = 2,3,... Transitions Between Landau-Levels in a Ga1-x_InxAs/InP Quantum Well," P. Omling, C. Wetzel, Al.L. Efros, B.K. Meyer; 21st Int. Conf. on the Physics of Semicond., Beijing, China, August 10 -- 14, 1992, Eds. Ping Jiang, Hou-Zhi Zheng, World Scientific, (1992) Singapore, p. 1218.

172.                      "Inter-Band Transition Modulated Cyclotron Resonance in Semiconductors," W. Lu, S.C. Shen, M. von Ortenberg, C. Wetzel, A. Twardowski, R.B. Tassius;  21st Int. Conf. on the Physics of Semicond., Beijing, China, August 10 -- 14, 1992, Eds. Ping Jiang, Hou-Zhi Zheng, World Scientific, (1992) Singapore, p. 1052.

173.                      "Microwave and Far-Infrared Induced Optically Detected Cyclotron Resonance in Epitaxial InP and GaAs," A. Moll, C. Wetzel, B.K. Meyer, P. Omling, F. Scholz; Phys. Rev. B 45, 1504-6 (1992). http://dx.doi.org/doi:10.1103/PhysRevB.45.1504 PREPRINT

174.                      "Theoretical and Experimental Studies on the Binding Energy of the Shallow Zn Acceptor in GaxIn1-xAs/InP Quantum Wells," Al.L. Efros, A. Kux, C. Wetzel, B.K. Meyer, D. Grützmacher, A. Kohl; Proc. of the Int. Meeting on Optics of Excitons in Confined Systems, Giardini Naxos, Italy 1991, (IOP 1992) p. 329-32. PREPRINT

175.                      "Optical Studies on Strained GaxIn1-xAs/InP Quantum Wells," A. Kux, C. Wetzel, B.K. Meyer, R. Meyer, D. Grützmacher, A. Kohl; Proc. of the Int. Meeting on the Optics of Excitons in Confined Systems, Giardini Naxos, Italy 1991, (IOP 1992) p. 97-100.

176.                      "Spin Dependent Recombination at Deep Centers in Si --- Electrically Detected Magnetic Resonance," P. Christmann, M. Bernauer, C. Wetzel, A. Asenov, B.K. Meyer, A. Endrös; Materials Science Forum 83-87, 1165 (1992).

177.                      "Optically Detected Cyclotron Resonance Determination of the In-Plane Effective Mass in GaInAs/InP Single Quantum Wells," P. Omling, C. Wetzel, Al.L. Efros, P. Sobkowicz, A. Moll, B.K. Meyer; Proc. SPIE - Int. Soc. Opt. Eng. 1675, 395-401 (1992). PREPRINT http://dx.doi.org/10.1117/12.137600

178.                      "Properties of GaInAsP Alloys Investigated by Optically Detected Magnetic Resonance Techniques," C. Wetzel, B.K. Meyer, D. Grützmacher, P. Omling; Eds. A. Katz, R.M. Biefeld, R.L. Gunshor, and R.J. Malik, Proc. Mat. Res. Soc. Symp. Vol. 216, 353-8 (1991). http://dx.doi.org/10.1557/PROC-216-353 PREPRINT

179.                      "Photoluminescence and Optically Detected Impact Ionization Studies of GaInAs/InP Strained Layer Superlattices," B.K. Meyer, C. Wetzel, D. Grützmacher, P. Omling; Mater. Sci. Eng. B-Solid State Mater. Adv. Technol. B 9, 293-6 (1991). http://dx.doi.org/doi:10.1016/0921-5107(91)90189-3  PREPRINT

180.                      "Cyclotron Resonance in Semiconductors Resonantly Induced or Enhanced by Interband Excitation," S.C. Shen, W. Lu, M. von Ortenberg, C. Wetzel; D. Grützmacher, R.B. Tassius; Wiss. Ber. HMFA Braunschweig 11, 135 (1989/90) ISSN 0723-9459.

181.                      "High Qualtity Interfaces in a-Si:H/a-SiC:H Superlattices," N. Bernhard, M. Kirsch, R. Eigenschenk, M. Bollu, C. Wetzel, F. Müller, R. Schwarz; Proc. Mat. Res. Soc. Symp. Vol. 192, 237 (1990).

182.                      "Photothermal Deflection Spectroscopy of InGaAs/InP Quantum wells," C. Wetzel, V. Petrova-Koch, F. Koch, D. Grützmacher;  Semiconductor Science Technology, 5, 702 (1990). http://dx.doi.org/doi:10.1088/0268-1242/5/7/011 PREPRINT

183.                      "Photothermal Deflection Spectroscopy as a Method for Studying Quantum Well Heterostructures," C. Wetzel, V. Petrova-Koch, M. Zachau, F. Koch, D. Grützmacher; Superlattices and Microstructures, 6, 99 (1989). http://dx.doi.org/doi:10.1016/0749-6036(89)90102-X PREPRINT

 

Publications in conference abstracts

           

  1. "Current and optical low-frequency noise of GaInN/GaN green light emitting diodes," S. L. Rumyantsev, C. Wetzel, M.S. Shur. SPIE Fluctuations and Noise, 20-24 May 2007, Florence, Italy.
  2. "Piezoelectric Quantum Structures for Full Spectrum Light Emitters," C. Wetzel, The International Conference on Metallurgical Coatings and thin Films, ICMCTF 2007, April 23-27, 2007, San Diego, California, USA.
  3. "Temperature Dependence of the Quantum Efficiency in Green and Deep Green GaInN/GaN Light Emitting Diodes," Y. Li, W. Zhao, Y. Xia, M. Zhu, T. Detchprohm, E.F. Schubert, and C. Wetzel. Materials Research Society Fall Meeting, Symposium I Advances in III-V Nitride Semiconductor Materials and Devices December 2006.
  4. "Extremely High Quality AlN Grown on (0001) Sapphire by Using Metal-Organic Vapor-Phase Epitaxy," Y.A. Xi, K.X. Chen, F. Mont, J.K. Kim, C. Wetzel, E.F. Schubert, W. Liu, X. Li, J. A. Smart. Materials Research Society Fall Meeting, Symposium I Advances in III-V Nitride Semiconductor Materials and Devices December 2006.
  5. "Low-Temperature Cathodoluminescence Mapping of Green, Blue, and UV GaInN/GaN LED Dies," Y. Xia, T. Detchprohm, J. Senawiratne, Y. Li, W. Zhao, M. Zhu and C. Wetzel. Materials Research Society Fall Meeting, Symposium I Advances in III-V Nitride Semiconductor Materials and Devices December 2006.
  6. "Structural Properties of Eu-Doped GaN Investigated by Raman Spectroscopy," J. Senawiratne, Y. Xia, T. Detchprohm, J.W. Tringe, C.G. Stevens, and C. Wetzel, Materials Research Society Fall Meeting, Symposium I Advances in III-V Nitride Semiconductor Materials and Devices December 2006.
  7. "Light Intensity Noise in GaInN/GaN Green Light Emitting Diodes," S. L. Rumyantsev, C. Wetzel, M.S. Shur. Materials Research Society Fall Meeting, Symposium I Advances in III-V Nitride Semiconductor Materials and Devices December 2006.
  8. "An Alternate Model of Radiative Recombination in Piezoelectric Quantum Wells," C. Wetzel. International Workshop on Nitride Semiconductor 2006, Kyoto, Japan, October 22-27, 2006. 
  9. "Temperature Dependence of the Quantum Efficiency in Green and Deep Green GaInN/GaN Light Emitting Diodes," Y. Li, W. Zhao, Y. Xia, M. Zhu, T. Detchprohm, E.F. Schubert, and C. Wetzel. International Workshop on Nitride Semiconductor 2006, Kyoto, Japan, October 22-27, 2006. 
  10. "The Quantum Efficiency of Green GaInN/GaN Light Emitting Diodes," C. Wetzel, Y. Li, W. Zhao, and T. Detchprohm. 32nd European Solid-State Circuits Conference, 36th European Solid-State Device Research Conference 2006. Montreux, Switzerland, September 18-22, 2006.
  11. "Optical Properties of GaInN/GaN Multi-Quantum Well Structure Grown by Metalorganic Vapor Phase Epitaxy," J. Senawiratne, M. Zhu, W. Zhao, Y. Xia, Y. Li, T. Detchprohm, and C. Wetzel. 2006 Lester Eastman Conference on High Performance Devices, Cornell University, August 2-4, 2006.
  12. "Temperature Dependence of the Quantum Efficiency in Green GaInN/GaN Light Emitting Diodes," Y. Li, W. Zhao, Y. Xia, M. Zhu, T. Detchprohm, and C. Wetzel, 2006 Lester Eastman Conference on High Performance Devices, Cornell University, August 2-4, 2006.
  13. "Spatial Spectral Analysis in High Brightness GaInN/GaN Light Emitting Diodes," T. Detchprohm, Y. Xia, J. Senawiratne, Y. Li, M. Zhu, W. Zhao, Y. Xi, E.F. Schubert, and C. Wetzel. 2006 Lester Eastman Conference on High Performance Devices, Cornell University, August 2-4, 2006.
  14. "The Role of Defects in Light Emitting Process of GaInN/GaN Multi-Quantum Well Structures and Light Emitting Diodes," J. Senawiratne, Y. Xia, T. Detchprohm, Y. Li, M. Zhu, W. Zhao, Y. Xi, and C. Wetzel. Gordon Research Conference, Defects in Semiconductors, Colby-Sawyer College, New London, NH, USA, July 2-7, 2006.
  15. "Radiative Recombination in Polarized Heterostructures," C. Wetzel. Gordon Research Conference, Defects in Semiconductors, Colby-Sawyer College, New London, NH, USA, July 2-7, 2006.
  16. "Development of Group-III Nitride Fuel and Solar Cells," M. Zhu, C. Wetzel, Gordon Research Conference, Defects in Semiconductors, Colby-Sawyer College, New London, NH, USA, July 2-7, 2006.
  17. "Temperature dependence of the quantum efficiency in green and deep green GaInN/GaN light emitting diodes," Y. Li, W. Zhao, Y. Xia, M. Zhu, T. Detchprohm, E.F. Schubert, and C. Wetzel, TMS 2006 Electronic Materials Conference, State College, PA, June 28-30, 2006.
  18. "Enhancing the Quantum Efficiency in Green and Deep Green GaInN/GaN Light Emitting Diodes," W. Zhao, Y. Li, T. Detchprohm, and C. Wetzel; The International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, France May 15-19, 2006.
  19. "Dislocation Analysis in Homoepitaxial GaInN/GaN Light Emitting Diode Growth," T. Detchprohm, Y. Xia, M. Zhu, W. Zhao, Y. Li, E.F. Schubert, D. Hanser and C. Wetzel; International Conference on Metal Organic Vapor Phase Epitaxy - XIII, Miyazaki, Japan, May 22-26, 2006.
  20. "Ultrafast Carrier Dynamics and Recombination in Green Emitting InGaN MQW LED," A.N. Cartwright, M.C-K. Cheung, F. Shahedipour-Sandvik, J.R. Grandusky, M. Jami, V. Jindal, S.B. Schujman, L.J. Schowalter, C. Wetzel, P. Li, T. Detchprohm, and J.S. Nelson; Spring Meeting Materials Research Society, Symposium DD: Solid-State Lighting Materials and Devices. San Francisco CA, USA, April 17- 21, 2006.
  21. "Efficiency in Piezoelectric GaInN/GaN Green Light Emitting Diodes," C. Wetzel, 2006 March Meeting of the American Physical Society, Baltimore MD , USA March 13-17, 2006.
  22. "Analysis of Quantum Efficiency of GaInN/GaN Light Emitting Diodes in the Range of 390 - 580 nm," W. Zhao, Y. Li, Y. Xia, M. Zhu, T. Detchprohm, E.F. Schubert, and C. Wetzel; Symposium GaN, AlN, InN, and Related Materials, Fall Meeting of the Materials Research Society Boston, November 8 - December 2, 2005.
  23. "Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures," Y. Xia, Y. Li, W. Zhao, M. Zhu, T. Detchprohm,  E.F. Schubert, and C. Wetzel; In GaN, AlN, InN, and Related Materials, Symposium GaN, AlN, InN, and Related Materials, Fall Meeting of the Materials Research Society Boston, November 8 - December 2, 2005.
  24. "In-Situ Measurement of Radiation-Induced Luminescence in Eu-Doped GaN," J. M. Castelaz, T. E. Felter, J. D. Morse, S. O. Kucheyev, C. Wetzel, C.G. Stevens and J.W. Tringe, 2005 Symposium of the Pacific Northwest Chapter of the AVS, September 15 - 16, 2005.
  25. "Time Resolved Charge Profiling of Polarization Dipoles in High Power 55 nm Green GaInN/GaN Light Emitting Structures," Y. Xia, Y. Li, Y. Ou, W. Zhao, M. Zhu, I. Yilmaz, T. Detchprohm, E.F. Schubert, and C. Wetzel; Internat. Conference on Nitride Semiconductors 2005, Bremen, Germany, August 9-Sept, 2005.
  26. "Internal Omni-Directional Reflector Using a Low Refractive Index Material for Light-Emitting Diodes," J.-Q. Xi, M. Ojha, W. Chow, C. Wetzel, T. Gessmann, E. F. Schubert, J.L. Plawsky, and W.N. Gill; 2005 Conference on Lasers and Electro-Optics. Baltimore, MD, USA May 22-27, 2005.
  27. "Reaching the Green with GaInN - Towards Deep Green Light Emitters," C. Wetzel. AFOSR Indium Nitride Workshop II, Kona, Hawai’i, 9-13 January 2005.
  28. "Development of high power green light emitting diode dies in piezoelectric GaInN/GaN," C. Wetzel, Y. Xia, T. Detchprohm, P. Li, and J.S. Nelson; Conference 5739, SPIE International Symposium Integrated Optoelectronic Devices, 22-27 January 2005, San Jose, CA. PREPRINT
  29. "Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures," Y. Xia, E. Williams, Y. Park, I. Yilmaz, J.M. Shah, E.F. Schubert, and C. Wetzel; Symposium GaN, AlN, InN, and Their Alloys, Fall Meeting of the Materials Research Society Boston, November 29 - December 3, 2004.
  30. "Polarized Semiconductor Heterostructures for Photon Harvesting," C. Wetzel. International Workshop on Multifunctional Materials II, Bahías de Huatulco, Oaxaca, Mexico, October 17-21, 2004.
  31. "Optimization of Green and Deep Green GaInN/GaN Light Emitting Diodes," C. Wetzel, P. Li, T. Detchprohm, and J.S. Nelson; Internat. Workshop on Nitride Semiconductors 2004, Pittsburgh, PA, USA, July 19-23, 2004.
  32. "Analysis of the Wavelength-Power Performance Roll-Off in Green Light Emitting Diodes," C. Wetzel, T. Detchprohm, P. Li, and J.S. Nelson; The 5th International Symposium on Blue Laser and Light Emitting Diodes, Gyeongju, Korea, March 15-19, 2004.
  33. "Considerations for Green Light Emitters - an Opportunity for Green Lasers?" C. Wetzel. AFOSR Workshop on Nanoscale Issues Nitride Semiconductors, Anchorage, Alaska, 22-25 August 2004.
  34. "Improving the Wavelength-Power Performance in Green GaInN/GaN Light Emitting Diodes," C. Wetzel, T. Detchprohm, P. Li, and J.S. Nelson, 2004 Electronic Materials Conference, University of Notre Dame, Notre Dame, IN, June 23-25, 2004.
  35. "Optical Transitions in Piezoelectrically Polarized GalnN/GaN Quantum Wells," C. Wetzel, J. Nelson, S. Kamiyama, H. Amano, I. Akasaki; 28th Conf on the Physics and Chemistry of Semiconductor Interfaces, Orlando, FL, January 8-12, 2000.
  36. "Quantized States in Homogeneous Polarized GaInN/GaN Quantum Wells," C. Wetzel, S. Kamiyama, H. Amano, and I. Akasaki, 25th International Conference on the Physics of Semiconductors, Osaka, Japan, September 17 - 22, 2000
  37. "Absorption Spectroscopy and Band Structure in Polarized GaN/AlxGa1-xN Quantum Wells," C. Wetzel, M. Kasumi, H. Amano, and I. Akasaki; International Workshop on Light-Matter Coupling in Nitrides, Saint-Nectaire, France, October 8-12 2000.
  38. "Defect and Stress Control of AlGaN and Fabrication of High-Efficiency UV-LED," H. Amano, M. Iwaya, S. Nitta, S. Terao, R. Nakamura, T. Ukai, S. Saitoh, S. Kamiyama, C. Wetzel, and I. Akasaki; Symposium GaN and Related Alloys, Fall Meeting of the Materials Research Society, November 27-December 1, 2000.
  39. "Excitation Spectroscopy and Level Assignment in Ga1-xInxN/GaN Quantum Wells," C. Wetzel, S. Kamiyama, H. Amano, and I. Akasaki; Int. Workshop on Nitride Semiconductors, Nagoya, Japan, September 24-27, 2000.
  40. "Bias Controlled Luminescence Efficiency in Polarized GaInN/GaN Quantum Wells," 42nd Electronic Materials Conference Denver, Colorado, USA June 21-23, 2000.
  41. "Discrete Stark-Like Ladder in Piezoelectric GaInN/GaN Quantum Wells," C. Wetzel, M. Kasumi, T. Detchprohm, T. Takeuchi, H. Amano, and I. Akasaki; International Conference of Nitride Semiconductors-3, Montpellier, France, July 5-9, 1999.
  42. "Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; Symposium GaN and Related Alloys, Fall Meeting of the Materials Research Society November 29- December 3, 1999.
  43. "Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design," C. Wetzel, H. Amano, and I. Akasaki; Solid State Devices and Materials, Tokyo, Japan September 21-24, 1999. PREPRINT
  44. "Piezoelectric Polarization in the Radiative Centers of GaInN/GaN Quantum Wells and Devices," C. Wetzel, T. Detchprohm, T. Takeuchi, H. Amano, and I. Akasaki; 41st Electronic Materials Conference, Santa Barbara CA, USA, June 30-July 2, 1999.
  45. "Nitride-Based Laser Diodes Using Thick n-AlGaN Layers," T. Takeuchi, T. Detchprohm, M. Iwaya, N. Iwaya, K. Isomura,K. Kimura, M. Yamaguchi, S. Yamaguchi, C. Wetzel, H. Amano, I. Akasaki, Y.W. Kaneko, R. Shioda, S. Watanabe, T. Hidaka, Y. Yamaoka, Y.S. Kaneko, and N. Yamada; 41st Electronic Materials Conference, Santa Barbara CA, USA, June 30-July 2, 1999.
  46. "Control of Dislocations and Stress in AlGaN on Sapphire Using Low Temperature Interlayers," H. Amano, M. Iwaya, N. Hayashi, T. Kashima, S. Nitta, C. Wetzel, and I. Akasaki; Phys. International Conference of Nitride Semiconductors-3, Montpellier, France, July 5-9, 1999.
  47. "Correlation of Vibrational Modes and DX-Like Centers in GaN:O," C. Wetzel, H. Amano, I. Akasaki, J.W. Ager III, M. Topf, and B.K. Meyer; 20th International Conference on Defects in Semiconductors (ICDS-20) in Berkeley, CA , USA, July 26 - 30, 1999.
  48. "Structural and Optical Properties of Al1-xInxN Grown by Metal Organic Vapor-Phase Epitaxy," S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; 18th Electronic Materials Symposium, Shirahama-shi, Wakayama-ken, June 30 - July 2, 1999.
  49. "Improvement of Crystalline Quality of GaN, AlGaN and AlN on Sapphire Using Low Temperature Interlayers," H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, T. Takeuchi, C. Wetzel, and I. Akasaki;  Symposium GaN and Related Alloys, Fall Meeting of the Materials Research Society November 30- December 4, 1998.
  50. "GaN-Based Laser Diode with Focused Ion Beam-Etched Mirrors," C. Ambe, T. Takeuchi, H. Katoh, K. Isomura, T. Satoh, R. Mizumoto, S. Yamaguchi, C. Wetzel, H. Amano, I. Akasaki, Y. Kaneko, and N. Yamada; European Material Research Society Conference, Strasbourg, France, June 16-19, 1998.
  51. "Piezoelectric Effects in GaInN/GaN Heterostructures and Quantum Wells,"  C. Wetzel, T. Takeuchi, H. Kato, H. Amano, and I. Akasaki; 24th Int. Conf. on the Physics of Semiconductors, Jerusalem, Israel, August 2-8, 1998.
  52. "Crystal Growth of Lattice-Matched Al1-xInxN to GaN and the Relation of Strong Bandgap Bowing to the Microscopic Structure," S. Yamaguchi, M. Kariya, S. Nitta, R. Mizumoto, C. Anbe, S. Ikuta, M. Katsuragawa, T. Wauke, H. Kato, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; 24th Int. Conf. on the Physics of Semiconductors, Jerusalem, Israel, August 2-8, 1998.
  53. "Defect and Stress Control in Group-III Nitrides Using Low Temperature Interlayers," H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, H. Katoh, T. Takeuchi, T. Detchprohm, S. Yamaguchi, C. Wetzel, and I. Akasaki; Third Symposium on Atomic-Scale Surface and Interface Dynamics, Fukuoka, Japan, March 4-5, (1999).
  54. "Piezoelectric Level Splitting in GaInN/GaN Quantum Wells," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; Symposium GaN and Related Alloys, Fall Meeting of the Materials Research Society November 30- December 4, 1998.
  55. "Piezoelectric Field Induced Transitions in GaInN/GaN Multiple Quantum Wells," C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Katoh, H. Amano, and I. Akasaki; International Symposium on Blue Laser and Light Emitting Diodes II. Chiba, Japan, September 29 - October 2, 1998.
  56. "Structural and Optical Properties of AlInN and AlGaInN on GaN Grown by Metalorganic Vapor Phase Epitaxy," S. Yamaguchi, M. Kariya, S. Nitta, H. Kato, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; International Conference on Metal Organic Vapor Phase Epitaxy IX, La Jolla, CA, USA, May 30 - June 4, 1998 .
  57. "Piezoelectric Effect in Group III Nitride Based Quantum Well Structure," T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Amano, and I. Akasaki; Second Symposium on Atomic-Scale Surface and Interface Dynamics, Toshimaku, Tokyo, February 26-27, 1998.
  58. "In Situ TEM Monitoring of the Crystallization Process of Low Temperature Deposited Nitride Buffer Layers on Sapphire and the Effect of Insertion of Low Temperature Deposited Buffer Layer on the Reduction of Threading Dislocations in OMVPE Grown GaN on Sapphire," H. Amano, T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Katoh, and I. Akasaki; Second Symp. on Atomic-Scale Surface and Interface Dynamics, Tokyo, February 26-27, 1998.
  59. "Piezoelectric Quantization in GaInN Thin Films and Multiple Quantum Well Structures," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; in Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, Fall Meeting of the Materials Research Society, Boston, MA, USA, November 30- December 4, 1998.
  60. "Optical Properties of GaInN/GaN Heterostructures and Quantum Wells," C. Wetzel, T. Takeuchi, S. Nitta, S. Yamaguchi, H. Amano, and I. Akasaki; IEEE Semiconducting and Insulating Materials Conference-X, June 1-5, 1998.
  61. "Heteroepitaxy of Group-III Nitrides for Device Applications," H. Amano, T. Takeuchi, H. Sakai, S. Yamaguchi, C. Wetzel, and I. Akasaki; 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, August 31-September 5, 1997.
  62. "Localized Donors in GaN: Spectroscopy Using Large Pressures," C. Wetzel, H. Amano, I. Akasaki, T. Suski, J.W. Ager, E.R. Weber, E.E. Haller, and B.K. Meyer; Symposium: Nitride Semiconductors, Fall Meeting of the Materials Research Society, Boston, MA, USA, December 1 - 5, 1997.
  63. "Structural Properties of Nitrides Grown by OMVPE on Sapphire Substrate," H. Amano, T. Takeuchi, S. Yamaguchi, S. Nitta, M. Kariya, M. Iwaya, C. Wetzel, and I. Akasaki; Symposium: Nitride Semiconductors, Fall Meeting of the Materials Research Society, Boston, MA, USA, December 1 - 5, 1997.
  64. "On the Nature of Radiative Recombination Processes in GaN," C. Wetzel, H. Amano, and I. Akasaki; IEEE 24th Int. Symp. on Compound Semiconductors. San Diego, CA, USA, September 8-11, 1997.
  65. "Valenceband Splitting and Luminescence Stokes Shift in GaInN/GaN Thin Films and Multiple Quantum Well Structures," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; Second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27-31, 1997.
  66. "Heteroepitaxy of Group-III Nitrides for Device Applications," H. Amano, T. Takeuchi, H. Sakai, S. Yamaguchi, C. Wetzel, and I. Akasaki; International Conference on Silicon Carbide, III-Nitrides and Related Materials, 1997, August 31 - September 5, 1997, Stockholm, Sweden.
  67. "X-Ray Photoelectron Diffraction Measurement of Hexagonal GaN Thin Films," R. Denecke, J. Morais, C. Wetzel, J. Liesegang, E.E. Haller, C.S. Fadley; Symposium: Gallium Nitride and Related Materials II, Fall Meeting of the Materials Research Society, Boston, MA, USA, December 1 - 5, 1997.
  68. "Electron-Phonon Scattering in Si Doped GaN," C. Wetzel, W. Walukiewicz, and J.W. Ager III; Symposium: III-V Nitrides, Fall Meeting of the Materials Research Society, Boston, MA, USA, December 2-6, 1996.
  69. "Si in GaN -- on the Nature of the Background Donor," C. Wetzel, A.L. Chen, T. Suski, J.W. Ager III, W. Walukiewicz; 7th International Conference on High Pressure Semiconductor Physics, Schwäbisch-Gmünd, Germany, July 28 - 31, 1996.
  70. "Strongly Localized Donor Level in Oxygen Doped Gallium Nitride," C. Wetzel, T. Suski, J.W. Ager III, W. Walukiewicz, S. Fischer, B.K. Meyer; 23rd Int. Conf. on the Physics of Semiconductors, Berlin, Germany, July 21-26, 1996.
  71. "Defect Studies of GaN Under Large Hydrostatic Pressure," C. Wetzel, S. Fischer, W. Walukiewicz, J. Ager III, E.E. Haller, I. Grzegory, S. Porowski, T. Suski; Symposium: Gallium Nitride and Related Materials, Fall Meeting of the Materials Research Society, Boston, MA 1995.
  72. "Fine Structure of the 3.42 eV Emission Band in GaN," S. Fischer, C. Wetzel, W. Walukiewicz, E.E. Haller; Symposium: Gallium Nitride and Related Materials, Fall Meeting of the Materials Research Society, Boston, MA 1995.
  73. "Identification of Transition Metals in GaN," K. Pressel, R. Heitz, L. Eckey, I. Loa, P. Thurian, A. Hoffmann, B.K. Meyer, S. Fischer, C. Wetzel, E.E. Haller; Symposium: Gallium Nitride and Related Materials, Fall Meeting of the Materials Research Society, Boston, MA 1995.
  74. "Carrier Localization in Gallium Nitride," C. Wetzel, W. Walukiewicz, E.E. Haller, J. Ager III, A. Chen, S. Fischer, P. Yu, R. Jeanloz, I. Grzegory, S. Porowski, T. Suski, H. Amano, I. Akasaki; 18th Int. Conf. on Defects in Semiconductors, Sendai, Japan, July 23-28, 1995.
  75. "Optical Investigation of Deep Defects in GaN Epitaxial Layers Grown on 6H-SiC," K. Pressel, S. Nilsson, C. Wetzel, D. Volm, B.K. Meyer, I. Loa, P. Thurian, R. Heitz, A. Hoffmann, E.N. Mokhov, and P.G. Baranov; 1st International Conference on Materials for Microelectronics, Barcelona, Spain 17-19 October 1994.
  76. "Two-Dimensional Wannier Excitons - Effects of a Random Adiabatic Potential," Al.L. Efros, C. Wetzel, J.M. Worlock; 4th Int. Conf. on Optics of Excitons in Confined Systems, Cortona, Italy, August 28-31, 1995.
  77. "Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure," C. Wetzel, W. Walukiewicz, E.E. Haller, H. Amano, I. Akasaki; Symposium: Defect and Impurity Engineered Semiconductors and Devices, Fall Meeting of the Materials Research Society, Boston, MA, USA, November 28 - December 2, 1994.
  78. "Time Resolved Photoluminescence Spectroscopy of GaN Epitaxial Layers," B.K. Meyer, D. Volm, C. Wetzel, L. Eckey, J.-Ch. Holst, P. Maxim, R. Heitz, A. Hoffmann,  I. Broser, E.N. Mokhov, P.G. Baranov, C. Qiu, and J.I. Pankove; Symposium: Defect and Impurity Engineered Semiconductors and Devices, Fall Meeting of the Materials Research Society, Boston, MA, USA, November 28 - December 2, 1994.
  79. "Effects of Microwave Modulation and Cyclotron Resonance on the Luminescence of GaAs/AlGaAs Quantum Wells and Wires," D.M. Hofmann, M. Drechsler, C. Wetzel, P. Emanuelsson, B.K. Meyer, F. Hirler, G. Abstreiter, G. Tränkle, G. Weimann; 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, Canada, 15-19 August 1994.
  80. "GaN on 6H-SiC -- Structural and Optical Properties," C. Wetzel, D. Volm, B.K. Meyer, K. Pressel, S. Nilsson, E.N. Mokhov, P.G. Baranov; Symposium: Diamond, SiC and Nitride Wide Bandgap Semiconductors, Fall Meeting of the Materials Research Society, Boston, MA, USA, November 29 - December 3, 1993.
  81. "The Conduction Band Spin Splitting in Type-I Strained and Unstrained (GaIn)As/InP Quantum Wells," P. Omling, B. Kowalski, B.K. Meyer, D.M. Hofmann, C. Wetzel, V. Härle, F. Scholz; Sixth Int. Conf. on Modulated Semiconductor Structures, Garmisch-Partenkirchen, Germany, August 23-27, 1993.
  82. "Magneto-Transport Properties of Strained GaInAs/InP Single Quantum Wells," V. Härle, H. Bolay, J. Hugo, F. Scholz, B.K. Meyer, M. Drechsler, C. Wetzel, B. Kowalski, P. Omling; 5th Int. Conf. on InP and Related Materials Paris, May 1993.
  83. "Novel Applications of Contactless Characterization Techniques in Epitaxial Crystals and Quantum Well Structures," B.K. Meyer, C. Wetzel, M. Drechsler, A. Moll, H. Linke, P. Omling, F. Scholz; Tenth Int. Conf. on Crystal Growth, San Diego, CA, USA, 16-21 August 1992.
  84. "Magneto-Optical and Far-Infrared Optically Detected Cyclotron Resonance Determination of the Effective Mass in GaAs1-xPx," P. Omling, C. Wetzel, Al.L. Efros, B.K. Meyer; Yamada Conf. XXXIII on The Application of High Magnetic Fields in Semicond. Physics, Tomiura, Chiba, Japan, August 3-7, 1992.
  85. "Observation of Forbidden D n = 2,3,... Transitions Between Landau-Levels in a Ga1-x_InxAs/InP Quantum Well," P. Omling, C. Wetzel, Al.L. Efros, B.K. Meyer; 21st Int. Conf. on the Physics of Semicond., Beijing, China, August 10 - 14, 1992.
  86. "Inter-Band Transition Modulated Cyclotron Resonance in Semiconductors,"  W. Lu, S.C. Shen, M. von Ortenberg, C. Wetzel, A. Twardowski, R.B. Tassius;  21st Int. Conf. on the Physics of Semicond., Beijing, China, August 10 - 14, 1992.
  87. "Theoretical and Experimental Studies on the Binding Energy of the Shallow Zn Acceptor in GaxIn1-xAs/InP Quantum Wells," Al.L. Efros, A. Kux, C. Wetzel, B.K. Meyer, D. Grützmacher, A. Kohl; Int. Meeting on Optics of Excitons in Confined Systems, Giardini Naxos, Italy, September 24-27, 1991.
  88. "Optical Studies on Strained GaxIn1-xAs/InP Quantum Wells," Kux, C. Wetzel, B.K. Meyer, R. Meyer, D. Grützmacher, A. Kohl; Int. Meeting on the Optics of Excitons in Confined Systems, Giardini Naxos, Italy, September 24-27, 1991.
  89. "Spin Dependent Recombination at Deep Centers in Si --- Electrically Detected Magnetic Resonance," P. Christmann, M. Bernauer, C. Wetzel, A. Asenov, B.K. Meyer, A. Endrös; 16th International Conference Defects in Semiconductors, Lehigh University, USA, July 22 - 26, 1991.
  90. "Optically Detected Cyclotron Resonance Determination of the In-Plane Effective Mass in GaInAs/InP Single Quantum Wells," P. Omling, C. Wetzel, Al.L. Efros, P. Sobkowicz, A. Moll, B.K. Meyer; Conf SPIE - Int. Soc. Opt. Eng. 1991.
  91. "Properties of GaInAsP Alloys Investigated by Optically Detected Magnetic Resonance Techniques," C. Wetzel, B.K. Meyer, D. Grützmacher, P. Omling; Eds. A. Katz, R.M. Biefeld, R.L. Gunshor, and R.J. Malik, Meeting of the Materials Research Society, 1990.
  92. "Photoluminescence and Optically Detected Impact Ionization Studies of GaInAs/InP Strained Layer Superlattices," B.K. Meyer, C. Wetzel, D. Grützmacher, P. Omling; Symposium A, European Material Research Society Conference, Strasbourg, France, Fall 1990.
  93. "High Quality Interfaces in a-Si:H/a-SiC:H Superlattices," N. Bernhard, M. Kirsch, R. Eigenschenk, M. Bollu, C. Wetzel, F. Müller, R. Schwarz; Meeting of the Materials Research Society, 1989.

 

Publications in non-refereed journals and abstracts

 

1.      "Piezoelectric Polarization Effects in GaInN/GaN Heterostructures and Some Consequences for Device Design," C. Wetzel, H. Amano, and I. Akasaki; Extended Abstracts of the 1999 Int. Conf. on Solid State Devices and Materials, Nihon Toshi Center Kaikan, Tokyo Japan, September 21 - 24, 1999.

2.      "Structural and Optical Properties of Al1-xInxN Grown by Metal Organic Vapor-Phase Epitaxy," S. Yamaguchi, M. Kariya, S. Nitta, H. Kato, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Electronic Materials Symposium, June 30 - July 2, 1999, p. 73-6, (1999).

3.      "Development of Green LED Dies at Uniroyal Optoelectronics," C. Wetzel, T. Salagaj, T. Detchprohm, P. Li and J. Nelson; Meijo International Symposium on Nitride Semiconductors 2003, Meijo University, Nagoya Japan, June 2003.

4.      "In Situ Ellipsometric Characterization of GaN Growth in MOVPE," C. Wetzel, M. Iwaya, T. Takeuchi, H. Amano, and I. Akasaki; Extended Abstracts of the 46th Spring Meeting 1999, the Japan Society of Applied Physics, Noda, Japan, March 28 - 31, 1999.

5.      "Growth of Super High Quality AlxGa1-xN Using an LT-AlN Interlayer," M. Iwaya, T. Ukai, R. Nakamura, N. Hayashi, T. Takeuchi, T. Kashima, S. Yamaguchi, C. Wetzel, H. Amano, and I. Akasaki; Extended Abstracts of the 46th Spring Meeting 1999, the Japan Society of Applied Physics, Noda, Japan, March 28 - 31, 1999.

6.      "Characterization of AlxGa1-xN Grown on LT-Interlayer by TEM," T. Kashima, A. Hosono, M. Katsuragawa, H. Kato, M. Iwaya, N. Hajashi, T. Takeuchi, S. Yamaguchi, C. Wetzel, H. Amano, and I. Akasaki; Extended Abstracts of the 46th Spring Meeting 1999, the Japan Society of Applied Physics, Noda, Japan, March 28 - 31, 1999.

7.      "The Relationship Between Structural Defects and Optical Properties of Al1-xInxN," S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Extended Abstracts of the 46th Spring Meeting 1999, the Japan Society of Applied Physics, Noda, Japan, March 28 - 31, 1999.

8.      "Improved Optical Confinement in Group-III Nitride Laser," T. Takeuchi, T. Detchprohm, M. Iwaya, N. Hayashi, S. Yamaguchi, C. Wetzel, H. Amano, and I. Akasaki, Y,. Chen, N. Yamada; Extended Abstracts of the 46th Spring Meeting 1999, the Japan Society of Applied Physics, Noda, Japan, March 28 - 31, 1999.

9.      "Crystal Growth and Characterization of In-Doped GaN," M. Kariya, S. Nitta, S. Yamaguchi, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Extended Abstracts of the 46th Spring Meeting 1999, the Japan Society of Applied Physics, Noda, Japan, March 28 - 31, 1999.

10.  "Alloying of a InN/GaN Heterostructure and Its Optical Properties," S. Nitta, M. Kariya, S. Yamaguchi, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Extended Abstracts of the 46th Spring Meeting 1999, the Japan Society of Applied Physics, Noda, Japan, March 28 - 31, 1999.

11.  "Growth of Thick AlxGa1-xN Using an LT-AlyGa1-yN Interlayer," N. Hayashi, T. Takeuchi, M. Iwaya, S. Yamaguchi, C. Wetzel, H. Amano, I. Akasaki, S. Watanabe, T. Hidaka, Y. Kaneko, and N. Yamada; Extended Abstracts of the 46th Spring Meeting 1999, the Japan Society of Applied Physics, Noda, Japan, March 28 - 31, 1999.

12.  "Growth and Optical Properties of Strain-Controlled GaN/AlGaN Quantum Wells," T. Takeuchi, C. Wetzel, N. Hayashi, M. Iwaya, S. Yamaguchi, H. Amano, and I. Akasaki; Extended Abstracts of the 59th Autumn Meeting 1998, the Japan Society of Applied Physics, Hiroshima, Japan, September 15 - 18, 1998. Vol. 1, p. 298

13.  "In situ Spectroscopic Ellipsometry of GaN and AlGaInN Growth by MOVPE," C. Wetzel, T. Takeuchi, M. Iwaya, M. Kasumi, H. Amano, and I. Akasaki; Centennial Meeting of the American Physical Society 1999, Atlanta GA, USA March 21 - 26, 1999. Bull. Am. Phys. Soc. 44(1,I), 314 (1999).

14.  "Spectroscopy of Piezoelectric Effects in GaInN/GaN Quantum Well Structures and Devices," C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Amano, and I. Akasaki; Centennial Meeting of the American Physical Society 1999, Atlanta GA, USA March 21 - 26, 1999. Bull. Am. Phys. Soc. 44(1,II), 1337 (1999).

15.  "Growth Mechanism and the Properties of GaN on a Low Temperature Buffer Layer Deposited on High Temperature GaN," M. Iwaya, N. Hayashi, T. Takeuchi, T. Kashima, M. Katsuragawa, S. Yamaguchi, C. Wetzel, H. Amano, and I. Akasaki; Extended Abstracts of the 59th Autumn Meeting 1998, the Japan Society of Applied Physics, Hiroshima, Japan, September 15 - 18, 1998. Vol. 1, p. 308.

16.  "Optical Properties of Al1-xInxN Grown by Metalorganic Vapor Phase Epitaxy," S. Yamaguchi, M. Kariya, S. Nitta, T. Wauke, H. Katoh, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Extended Abstracts of the 59th Autumn Meeting 1998, the Japan Society of Applied Physics, Hiroshima, Japan, September 15 - 18, 1998. Vol. 1, p. 311.

17.  "Observation of the Surface of Al1-xInxN Ternary Alloys," M. Kariya, S. Nitta, S. Yamaguchi, H. Katoh, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Extended Abstracts of the 59th Autumn Meeting 1998, the Japan Society of Applied Physics, Hiroshima, Japan, September 15 - 18, 1998. Vol. 1, p. 311.

18.  "Growth of High Quality AlN on GaN," N. Hayashi, T. Takeuchi, M. Iwaya, S. Yamaguchi, C. Wetzel, H. Amano, and I. Akasaki; Extended Abstracts of the 59th Autumn Meeting 1998, the Japan Society of Applied Physics, Hiroshima, Japan, September 15 - 18, 1998. Vol. 1, p. 311.

19.  "Piezoelectric Franz-Keldysh Effect in GaInN/GaN Single Heterostructures," C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Amano, and I. Akasaki; Extended Abstracts of the 45th Annual Spring Meeting of the Japan Society of Applied Physics, Hachiohji, Japan, March 28-31, 1998.

20.  "Crystalline Quality of GaN on Sapphire and Group-III Nitride Alloys on GaN Studied by X-Ray Diffraction and TEM," H. Amano, T. Takeuchi, H. Sakai, S. Yamaguchi, C. Wetzel, H. Katoh, and I. Akasaki; Extended Abstracts of the 45th Annual Spring Meeting of the Japan Society of Applied Physics, Hachiohji, Japan, March 28-31, 1998.

21.  "Polarizing Thermalization of Photocarriers in GaN," C. Wetzel, T. Takeuchi, S. Yamaguchi, C. Anbe, H. Sakai, T. Detchprohm, H. Amano, and I. Akasaki; Extended Abstracts of the 58th Annual Fall Meeting of the Japan Society of Applied Physics, Akita, Japan, October 1-5, 1997.

22.  "Piezoelectric Effect in GaInN Strained Quantum Wells (II)," T. Takeuchi, S. Yamaguchi, C. Wetzel, H. Sakai, H. Amano, I. Akasaki, Y. Kanebo, Y. Yamaoka, S. Nakagawa, and N. Yamada; Extended Abstracts of the 58th Annual Fall Meeting of the Japan Society of Applied Physics, Akita, Japan, October 1-5, 1997.

23.  "Crystal Growth of InN on GaN by Metalorganic Vapor Phase Epitaxy," S. Yamaguchi, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Extended Abstracts of the 58th Annual Fall Meeting of the Japan Society of Applied Physics, Akita, Japan, October 1-5, 1997.

24.  "Persistent Conductivity in n-Type Gallium Nitride," C. Wetzel, J.W. Ager III, W. Walukiewicz, and E.E. Haller; Bull. Am. Phys. Soc. 42(1), 263 (1997).

25.  "Transition Metal Impurities in Gallium Nitride --- the Role of Internal Surfaces," C. Wetzel, S. Fischer, A.C. Thompson, E.E. Haller, K. Pressel, and S. Nilsson; Bull. Am. Phys. Soc. 41(1), late news (1996).

26.  "Defect Characterization of As-Grown N-Type Gallium Nitride," C. Wetzel, S. Fischer, W. Walukiewicz, E.E. Haller, P. Perlin, T. Suski; Bull. Am. Phys. Soc. 40(1), 416 (1995).

27.  "Photoluminescence Studies of Small GaN Single crystals," S. Fischer, C. Wetzel, W. Walukiewicz, E.E. Haller; Bull. Am. Phys. Soc. 40(1), 416 (1995).

28.  "Zucht und Charakterisierung von GaN aus Gasphasenepitaxie," S. Fischer, C. Wetzel, E.E. Haller, B.K. Meyer; Verhandl. DPG (VI) 30, 1301 (1995).

29.  "Optische Charakterisierung  von GaN Unter Hydrostatischem Druck," C. Wetzel, S. Fischer, W. Walukiewicz, E.E. Haller, B.K. Meyer; Verhandl. DPG (VI) 30, 1230 (1995).

30.  "GaN auf SiC: Struktur und optische Eigenschaften," C. Wetzel, B.K. Meyer, D. Volm, E.N. Mokhov, P.G. Baranov, K. Pressel;  Verhandl. DPG (VI) 29 (1994).

31.  "Optically Detected Impact Ionization and Cyclotron Resonance of AlGaAs/GaAs Quantum Wells and Quantum Wires," C. Wetzel, D.M. Hofmann, B.K. Meyer, Al.L. Efros, F. Hirler, G. Abstreiter; Bull. Am. Phys. Soc. 39(1), 86 (1994).

32.  "In-Plane Effective Mass in GaInAs/InP Quantum Wells: The well width dependence," C. Wetzel, Al.L. Efros, B.K. Meyer, and P. Sobkowicz; Verhandl. DPG (VI) 28 (1993).

33.  "Subharmonische Zyklotronresonanz von Elektronen in Einer GaInAs/InP Quantentopfstruktur," C. Wetzel, B.K. Meyer, Al.L. Efros, P. Omling, A. Kohl; Verhandl. DPG (VI) 27 (1992).

34.  "Optische Untersuchungen an Verspannten GaxIn1-xAs/InP Übergitterstrukturen," C. Wetzel, A. Kux, B.K. Meyer, D. Grützmacher, and P. Omling; Verhandl. DPG (VI) 26 (1991).

 

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