Via a remote epitaxy approach using polar substrates such as NaCl coated with graphene, we synthesize epitaxial halide perovskite films with controlled dislocation density.
Here we report the synthesis of a halide perovskite semiconductor that is simultaneously photoferroelectricity switchable and chiral.
We reveal the existence of unit-cell-thick ferroelectric domain size as well as both 180° and 90° domain walls in free-standing CsBiNb2O7.
We report the flexo-photovoltaic effect in an archetypal two-dimensional material, MoS2, by using a strain-gradient engineering approach through VO2.
Jian Shi, Associate Professor, Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th St, MRC 113, Troy, NY, 12180, USA
Emai: firstname.lastname@example.org or email@example.com; Phone: 573-239-8872