P. D. Persans - Publications as of Jan 2007

  1. C.C. Tsai, H. Fritzsche, M.H. Tanielian, P.J. Gaczi, P. Persans and M.A. Vesaghi, "Plasma Deposited Si‑H and Si‑B.H Films", Proc. of the Seventh Int'l. Conf. on Liquid and Amorphous Semiconductors, Edinburgh, ed. by W. Spear, p. 339 (1977).
  2. H. Fritzsche, C.C. Tsai and P. Persans, “Amorphous Semiconducting Silicon‑Hydride Alloys", Solid State Technology 21, 55 (1978). (130 citations)
  3. P. Persans, "Analysis of Thermopower and Conductivity for Mixed Band and Broad Tail State Conduction", J. Non‑Cryst. Solids 35/36, 369 (1980). (10 citations)
  4. M.Tanielian, M. Chatani, H. Fritzsche, P. Persans and V. Smid, "Effect of Adsorbates and Insulating Layers on the Conductance of Plasma Deposited a‑Si:H", J. Non‑Cryst. Solids 35/36, 575 (1980). (51 citations)
  5. P. Persans, "Gap State Spectroscopy Using Two Beam Photoconductivity in a‑Si:H", Solid State Commun. 36, 856 (1980). (18 citations)
  6. E.A. Schiff, P. Persans, H. Fritzsche and V. Akopyan, "A Doping‑Precipitated Morphology in Plasma Deposited a‑Si:H", Appl. Phys. Lett. 38, 92 (1981). (41 citations)
  7. P. Persans and H. Fritzsche, "Dual Light Beam Modulation of Photocarrier Lifetime in Intrinsic a‑Si:H", Journal de Physique 42, C4, 597 (1981). (15 citations)
  8. P. Persans, "Dual Beam Photoconductivity Modulation Spectroscopy in a‑Si:H", Philosophical Magazine B46, 435‑471 (1982). (45 citations)
  9. P. Persans and H. Fritzsche, "Infrared Quenching and Temperature Dependence of Photoconductivity: Recombination in Plasma Deposited a‑Si:H", AIP Conf. Proceedings No. 73, 349 (1982). (5 citations)
  10. G.D. Cody, B. Abeles, B. Brooks, C. Roxlo, P. Persans, A. Ruppert and C. Wronski, "Effect of Site Disorder on the Optical Absorption Edge of a‑SiHx”, J. Non‑Cryst. Solids 59/60, 325 (1983). (14 citations)
  11. T. Tiedje, B. Abeles, P. Persans, G. Cody and B. Brooks, "Bandgap and Resistivity of Amorphous Semiconductor Superlattices”, J. Non‑Cryst. Solids 66, 345 (1984). (67 citations)
  12. P. Persans, A. Ruppert, S. Chan and G. Cody, "Relationship Between Bond Angle Disorder and the Optical Edge of a‑Ge:H", Solid State Commun. 51, 203 (1984). (32 citations)
  13. C.B. Roxlo, P. Persans and B. Abeles, "Electroabsorption Spectroscopy of Well and Barrier Materials in Amorphous Semiconductor Superlattices", Appl. Phys. Lett. 45, 1132 (1984). (16 citations)
  14. P. Persans, Ruppert, G. Cody, B. Brooks and W. Lanford, "Optical Properties of a‑Ge:H ‑ Structural Disorder and H Alloying", in Optical Effects in Amorphous Semiconductors, ed. P.C. Taylor and S.G. Bishop (Am. Inst. of Phys., New York (1984) p. 349 (5 citations)
  15. P. Persans, B. Abeles, J. Scanlon and H. Stasiewski, "Hydrogenated Amorphous Germanium/Silicon Superlattices", Proc. 17th Intl. Conf. on Physics of Semiconductors, eds. J.D. Chadi and W.A. Harrison (Springer‑Verlag, New York, 1985) p. 499 (17 citations).
  16. P. Persans, A. Ruppert, G. Cody and B. Brooks, "Temperature Dependence of the Optical Gap of a‑Ge:H”, Solid State Commun. 54, 461 (1985). (7 citations)
  17. B. Abeles, T. Tiedje, H. Stasiewski, H. Deckman, K. Liang and C. Roxlo, "Amorphous Semiconductor Superlattices", Superlattices and Microstructures 1, 115 (1985) (2 citaions)
  18. P. Persans, A.F. Ruppert, B. Abeles and T. Tiedje, "Raman Scattering Study of Amorphous Si‑Ge Interfaces", Phys. Rev. B32, 5558 (1985). (50 citations)
  19. B. Abeles, P. Persans, H. Stasiewski and W. Lanford, "Structure of Interfaces in Amorphous Semiconductor Superlattices”, J. of Non‑Cryst. Solids 77/78, 1065 (1985). (20 citations)
  20. T. Tiedje, C. Wronski, P. Persans and B. Abeles, "Recent Experimental Results on a‑Si:H/a‑Ge:H Superlattice Structures”, J. of Non‑Cryst. Solids 77/78, 1031 (1985). (27 citations)
  21. P. Persans, Abeles, A. Ruppert, T. Tiedje and H. Stasiewski, "Structure of Amorphous Solid Interfaces Using Compositionally Modulated Superlattices", J. de Physique, Colloque C8, 597 (1985). (2 citations)
  22. P. D. Persans, A. Ruppert and C. Roxlo, "Defect Passivation and Photoconduction in Sputtered a‑Ge:H", in Tetrahedrally Bonded Amorphous Semiconductors, ed. D. Adler and H. Fritzsche, Plenum Press (1985) p. 147 (invited)
  23. P. Persans and A.F. Ruppert, "Atomic Interdiffusion in Amorphous Silicon and Germanium", in Phase Transitions in Condensed Systems, eds. F. Spaepen, S. Cargill and K.N. Tu, (MRS, Pittsburgh, 1986) 329. (3 citations)
  24. P. Persans, B. Abeles, T. Tiedje and C. Roxlo, "Growth and Structure of Compositionally Modulated Amorphous Superlattices", in Layered Structures, and Epitaxy, eds. J.M. Gibson, G.C. Osbourn, R.M. Tromp, (MRS, Pittsburgh, 1986) p. 395.
  25. C. Wronski, P. Persans and B. Abeles, "Optoelectronic Properties of a‑Ge:H/a‑si:H Superlattice Structures", in Materials Issues in Amorphous ‑ Semiconductor Technology, eds. D. Adler, Y. Hamakawa, A. Madan, (MRS, Pittsburgh, 1986) p. 415.
  26. L. Yang, B. Abeles and P. D. Persans, “Structure of interfaces in amorphous silicon/silicon nitride superlattices determined by in-situ infrared reflectance”, Proc. of the Int. Workshop on Amorphous Semiconductors, eds. H. Fritzsche, D. X. Han, and C. C. Tsai (World Scientific, 1986) pp. 235-238.
  27. I. Wachs, P Persans, F Hardcastle, Structure Of Surface Rhenium Oxide Species On Alumina, Abstr Pap Am Chem S 191: 154-COLL (1986)
  28. B. Abeles, H. Deckman, P. Persans, C. Roxlo, T. Tiedje and L. Yang, "Structure of Interfaces in Compositionally Modulated Amorphous Semiconductor Superlattices", J. Vac. Sci. Technol. A4, 650 (1986) (1 citation)
  29. B. Abeles, C. Wronski and T. Tiedje, "Compositionally Modulated Amorphous Semiconductor Superlattices", Acta Metallurgica 34 (1986). (invited)
  30. P. Persans and A. Ruppert, "Thermal Expansion of a‑Ge:H Thin Films”, J. Appl. Phys. 59, 271 (1986). (2 citations)
  31. B. Abeles, P. Persans, L. Yang, H. Stasiewski and W. Lanford, "Infrared Spectroscopy of Interfaces in Amorphous Hydrogenated Silicon/Silicon Nitride Superlattices", Appl. Phys. Lett. 48, 168 (1986). (37 citations)
  32. C. Wronski, P. Persans and B. Abeles, "Electrical Transport in Hydrogenated Ge/Si Superlattices”, Appl. Phys. Lett. 49, 569 (1986). (47 citations)
  33. L. Yang, B. Abeles and P. Persans, "In‑Situ Optical Reflectivity of Growing a‑Si:H/a‑SiNx:H Superlattice”, Appl. Phys. Lett. 49, 631 (1986). (16 citations)
  34. C. Wronski, P. Persans, T. Tiedje, B. Abeles and M. Hicks, "Charge Transfer Enhancement of Photoconductivity in a‑Ge:H/a‑Si:H Multilayer Films", Appl. Phys. Lett. 49, 1378 (1986). (6 citations)
  35. C. Roxlo, B. Abeles and P. Persans, "Interface Defects and Disorder in a‑Si:H/a‑SiNx:H Superlattices", J. Vac. Sci. Technol. B4, 1430 (1986). (16 citations)
  36. C. Wronski, P. Persans and B. Abeles, "Carrier Transport in Compositionally Modulated a‑Si:H Based Superlattice Structures", in Amorphous Silicon Semiconductors‑Pure and Hydrogenated, eds. D. Adler, Y. Hamakawa, A. Madan and M. Thompson, (MRS, Pittsburgh), p. 381 (1987).
  37. P. D. Persans, C. Wronski and B. Abeles, "Band Edge Alignment and Quantum Size Effects in Hydrogenated Amorphous Silicon/Germanium Superlattice Structures", in Disordered Semiconductors, eds. M. Kastner, G. Thomas and S. Ovshinsky (Plenum Press, New York, 1987) p. 541. (invited)
  38. P. Persans and A. Ruppert, "Structure and Stability of Amorphous Solid Interfaces", in Semiconductor‑Based Heterostructures: Interfacial Structure and Stability, ed. M.L. Green, (MRS, Pittsburgh, 1987).(invited)
  39. P. Persans, A.F. Ruppert and B. Abeles, "Crystallization Kinetics of Amorphous Si/SiO2 Superlattice Structures", J. of Non‑Cryst. Solids 102, 130 (1988). (36 citations)
  40. P. Persans, A.F. Ruppert and B. Abeles, "Stability and Crystallization of Amorphous Semiconductor Multilayers”, in Multilayers: Synthesis, Properties and Non‑Electronic Applications, eds. T. Barbee, F. Spaepen and L. Greer, (MRS, Pittsburgh), p. 179 (1988).
  41. R. Buckley, H. Deckman, J. Newsam, P. Persans, J. McHenry and H. Witzke, "Structure Sensitive Vibrations in Zeolites as Studied by Raman Scattering", in Microstructure and Properties of Catalysts, eds. M. Treacy, J.M. Thomas and J.M. White, (MRS, Pittsburgh, 1988).

42.     P.D. Persans, A. Tu, Y.J. Wu and M. Lewis, ”Size-distribution dependent optical properties of CdSSe nanocrystals”, J. Opt. Soc. Am. B,  6, 818 (1989) (40 citations)

  1. P.D. Persans, "Vibrational Raman Studies of Amorphous Solid Interfaces," Phys. Rev. B 39 1797 (1989) (14 citations)
  2. P.D. Persans, A. Ruppert, Y.-J. Wu, B. Abeles, W. Lanford and V. Pantojas, "Stability of Tetrahedrally-Bonded Amorphous Semiconductor Multilayers," J. Non-Cryst. Sol. 114 771 (1989). (24 citations)
  3. P.D. Persans, "Properties of a-Si:H/a-Ge:H multilayers," in Properties of Amorphous Silicon (INSPEC, London, 1989)
  4. P.D. Persans, "Raman Scattering as a Probe of Structure in Amorphous Multilayers," in Amorphous Silicon and Related Materials, ed. H. Fritzsche (World Scientific, Singapore, 1989), p. 1045
  5. P.D. Persans, A. Ruppert, B. Abeles, G. Hughes, and K. Liang, "High Resolution X-Ray Characterization of Amorphous Semiconductor Multilayers," in Amorphous Silicon Technology - 1989, eds. A. Madan, M. Thompson, P.C. Taylor, Y. Hamakawa, and P. LeComber (Materials Research Society, Pittsburgh, 1989), p. 711 (5 citations)
  6. Y.-J. Wu, P. Persans, A. Ruppert, B. Abeles, and S.-L. Wang, "Growth of Microcrystalline Silicon in Ultrathin Layers," in Materials Issues in Microcrystalline Semiconductors, eds. C.C. Tsai, P. Fauchet, and K. Tanaka (MRS, Pittsburgh, 1990), p. 217
  7. E. Lu, P. Persans, A. Ruppert and R. Chianelli, "Preparation and Characterization of Colloidal MoS2 Microcrystals," in Materials Issues in Microcrystalline Semiconductors, eds. C.C. Tsai, P. Fauchet, and K. Tanaka (MRS, Pittsburgh, 1990), p. 153
  8. X-S. Zhao, J. Schroeder, P. Persans and E. Lu, "A Study of the Pressure Induced Phase Transition in Bulk and Nanocrystalline CdS," in Materials Issues in Microcrystalline Semiconductors, eds. C.C. Tsai, P. Fauchet, and K. Tanaka (MRS, Pittsburgh, 1990), p. 93

51.     P. Persans, D. Arnzen and G. Possin, “Optical characterization of interface, surface, and bulk defects in amorphous silicon thin films”, Mat. Res. Soc. Symp. Proc., 192, 231 (1990)

  1. P.D. Persans, A.F. Ruppert, V. Pantojas, B. Abeles, K. Liang, G. Hughes, "Interface roughness and x-ray reflectivity of amorphous semiconductor multilayers," Mat. Res. Soc. Symp. Proc. 192 225 (1990)
  2. P.D. Persans, A.F. Ruppert, B. Abeles, Y.J. Wu, V. Pantojas, K. Liang and G. Hughes, "Structural Stability of Amorphous Semiconductor Superlattices," in Layered Structures-Heteroepitaxy, Superlattices, Strain and Metastability, eds. L. Schowalter, B. Dodson, F. Pollak, and J. Cunningham (MRS, Pittsburgh, 1990), p. 201.

54.     P. Persans, A. Tu, M. Lewis, T. Driscoll and R. Redwing, “Optical properties of II-VI semiconductor doped glasses”, Mat. Res. Soc. Symp. Proc.,  164, 105 (1990) (14 citations)

  1. P.D. Persans, E. Lu, A.F. Ruppert, G. Wagoner, and J. Haus, "Particle shape effects on optical absorption in semiconductor colloids," in Physical Phenomena in Granular Materials, eds. P. Sheng, G. Cody and T. Geballe, Mat. Res. Soc. Symp. Proc. 195 591 (1990) (4 citations)
  2. X.-S. Zhao, J. Schroeder, and P. Persans, "Resonant Raman Scattering Induced by Pressure Tuning of Bulk and Colloidal Microcrystallite Cadmium Sulfide," J. High Press. Res. 3 87 (1990). (3 citations)
  3. G. Mei, S. Carpenter, L. Felton and P. Persans, "Photomodulation Mechanisms in CdSSe Nanocrystals," Solid State Commun. 80 557 (1991) (8 citations)

58.     A. Tu and P. Persans, “Raman scattering as a probe of composition in II-VI ternary semiconductor-glass composites,” Appl. Phys. Lett.,  58, 1506 (1991) (52 citations)

59.     X.S. Zhao, J. Schroeder, P. Persans and T. Bilodeau, “Resonant Raman scattering and photoluminescence studies in glass composite and colloidal CdS”, Phys. Rev. B 43, 12580 (1991) (32 citations)

  1. A.F. Ruppert, P.D. Persans, G.J. Hughes, K.S. Liang, B. Abeles, and W. Lanford, "Density of Ultrathin Amorphous Silicon and Germanium Sub-Layers in Periodic Amorphous Multilayers," Phys. Rev. B 44 11381 (1991) (7 citations)
  2. X.S. Zhao, J. Schroeder, and P. Persans, "Phase transitions in CdSe nanocrystal composites at high pressures," Mat. Res. Soc. Symp. Proc. 206 151 (1991)
  3. G. Mei and P. Persans, "Photomodulation spectroscopy of CdSSe semiconductor nanocrystals," Mat. Res. Soc. Symp. Proc. 206 145 (1991)
  4. An Tu and P. Persans, "Raman Scattering in Semiconductor Nanocrystals," Mat. Res. Soc. Symp. Proc. 206 97 (1991)
  5. V. Pantojas, C. Cabral, J. Harper, and P. Persans, "Diffuse Light Scattering as a Probe of Buried Interface Reactions," Mat. Res. Soc. Symp. Proc. 202 701 (1991)
  6. P. Persans, G. Possin, D. Arnzen, X.S. Zhao, and K. Breton, "Interface Effects on Carrier Transport in a-Si:H," Mat. Res. Soc. Symp. Proc. 219 837 (1991)

66.     J. Schroeder, M. Silvestri, X.S. Zhao, P. Persans and L.W. Hwang, “Resonant Raman scattering and photoluminescence studies in semiconducting nanocrystal composites and colloids at high pressures”, in Proc. XIII AIRAPT - Int'l. Conf. on High Press. Sci. and Tech. ed. A. K. Singh, (New Delhi, India, 1991) pp. 65-67.

67.     G. Mei, S. Carpenter, L.E. Felton and P.D. Persans, “Size effects on optical transition energies in CdSSe nanocrystal glass composites”, J. Opt. Soc. Am. B  9, 1394 (1992) (19 citations)

68.     J. Schroeder, M. Silvestri, X.S. Zhao, P. Persans and L.W. Hwang, “Spectroscopy of Semiconductors at High Pressure”, Mat. Res. Soc. Symp. Proc.,  272, 251 (1992)

  1. Y.J. Wu, X.S. Zhao, and P.D. Persans, "Raman scattering in electrochemically-prepared porous silicon," Mat. Res. Soc. Symp. Proc. 256 69 (1992)
  2. V. Pantojas, V. Kovantsev, J. Pant, S. Budkov, T.M. Hayes, and P.D. Persans, "A polycapillary-based x-ray optical system for diffraction applications", Nucl. Inst. Meth. A 333 607 (1993) (9 citations)
  3. V.E. Kovantsev, J. Pant, V. Pantojas, N. Nazaryan, T.M. Hayes, and P.D. Persans, "Capillary-based x-ray collector/collimator for diffraction applications," Appl. Phys. Lett. 62 2905 (1993) (11 citations)
  4. T.M. Hayes, V.E. Kovantsev, J. Pant, V. Pantojas, N. Nazaryan, and P.D. Persans, "Developments in the design of efficient x-ray optical elements using large arrays of glass capillaries," Jap. J. Appl. Phys. 32 232 (1993)
  5. P. D. Persans, M. Silvestri,  G. Mei, E. Lu, H. Yukselici, and J. Schroeder, “Size Effects in II-VI Semiconductor Nanocrystals,” Braz. J. Phys., 23, 144-151 (1993). (invited) (10 citations)
  6. G. Wagoner, A. Ruppert, and P. Persans, "Optical Properties of Colloidal MoS2," Mat. Res. Soc. Symp. Proc. 283 909 (1993)

75.     E.B. Stokes and P.D. Persans, “Photoluminescence excitation spectroscopy of CdSSe nanoparticles” , Mat. Res. Soc. Symp. Proc.,  283, 865 (1993)

  1. X.S. Zhao, P. Persans, J. Schroeder, and Y.J. Wu, "Strained Quantum Dots in Porous Silicon," Mat. Res. Soc. Symp. Proc. 283 127 (1993)
  2. A. P. Taylor, B. M. Kim, P. D. Persans and L. J. Schowalter, “Si and Ge nanocrystallites embedded in CaF2 by Molecular Beam Epitaxy”, Mat. Res. Soc. Symp. Proc. 298 103 (1993).
  3. A. P. Taylor, K. Stokes, Z. C. Wu, P. D. Persans, L. J. Schowalter, and F. LeGoues, Mat. Res. Soc. Symp. Proc. 283 (1993).
  4. A. R. Grant, P. D. Persans, R. F. Kwasnick, G. E. Possin, “Use of a Field Effect Transistor to Study Phototransport Properties of a-Si:H”, Mat. Res. Soc. Symp. Proc. 297 883-888 (1993).
  5. M.R. Silvestri, J. Schroeder, P.D. Persans, L.W. Hwang, and X.S. Zhao, "Optical High Pressure Studies of Ternary Semiconducting Nanocrystals, AIP Conf. Proc. 309 605 (1994)
  6. A. Kardiawarman, V. Kovantsev, S. Budkov, W.M. Gibson, T.M. Hayes, L.B. Lurio, C.A. MacDonald, P.D. Persans, and Q.F. Xiao, "Characterization of a multi-fiber polycapillary-based x-ray collimating lens," in X-Ray and UV Detectors, ed R B Hoover, Proc SPIE 2278 (1994)
  7. T. M. Hayes, V. Kovantsev, J. Pant, V. Pantojas, and P. Persans, “Characterization of a novel x-ray collimator”, in X-ray Absorption in Bulk and Surfaces, ed. K. B. Garg, E. A. Stern, and D. Norman (World Scientific, Singapore, 1994) 119.
  8. K. Stokes, H. Yukselici, and P. Persans, "Observation of three excited states in CdSSe nanocrystals by electromodulation spectroscopy," Sol. State Commun. 92 195 (1994) (15 citations)
  9. X. S. Zhao, Y. Ge, P. D. Persans, “Carrier-induced strain in Si and GaAs Nanocrystals”, Appl. Phys. Lett. 65 2033 (1994) (13 citations)
  10. X. S. Zhao, Y. R. Ge, J. Schroeder, P. D. Persans, Lattice relaxation effects in Si and GaAs nanocrystals, Mat. Res. Soc. Symp. Proc., 358, 199 (1995).
  11. P. D. Persans, L. B. Lurio, J. Pant, R. J. Olsson, H. Yukselici, T. M. Hayes, X-ray absorption spectroscopy and optical absorption studies of the growth of CdS nanocrystals in glass, Mat. Res. Soc. Symp. Proc., 358, 225 (1995).
  12. M. Silvestri, L. W. Hwang, P. Persans, and J. Schroeder, “Resonant Raman scattering in CdSSe nanocrystals”, Mat. Res. Soc. Symp. Proc., 358, 235 (1995).
  13.  Kevin L. Stokes and P. D. Persans, “Trap states in Cd(S,Se) nanocrystals probed by photomodulation spectroscopy”, Mat. Res. Soc. Symp. Proc., 358, 241 (1995).
  14. T.M. Hayes, L.B. Lurio, R.J. Olsson, J. Pant, H. Yükselici, and P.D. Persans, "XAS study of CdS nanocrystals formed in glass," Physica B, 208/209, 585 (1995).
  15. H. Yükselici, P. D. Persans, T. M. Hayes, “Optical studies of growth of Cd1-xZnxS nanocrystals in borosilicate glass”, Phys. Rev. B 52 11763 (1995). (37 citations)

91.     K L. Stokes and P.D Persans, “Intensity-dependent electromodulation spectrum in CdSSe nanocrystals”, Phys. Rev. B 54 4460 (1996). (1 citation)

92.     K. L. Stokes and P. Persans, “Excited States and Electric Field Response of CdSSe Quantum Dots”, Phys. Rev B 54 1892 (1996). (12 citations)

93.     P D Persans, H Yükselici, L Lurio, J Pant, M Stapleton, T M Hayes, “Homogeneous Nucleation of CdS Nanoparticles in Borosilicate Glass”, J Non-Cryst Sol. 203 192 (1996). (6 citations)

94.     H Yükselici and P D Persans, “High Temperature Optical Studies of CdS Nanoparticles”, J Non-Cryst. Sol., 203, 206 (1996). (3 citations)

95.     J. Schroeder, L. W. Hwang, M. R. Silvestri, P. D. Persans, “Optical studies on II-VI semiconductor quantum dots: Particle size dependence of the high pressure phase stability”, J. Non-Cryst. Sol., 203, 217 (1996). (2 citations)

96.     J. Schroeder and P. D. Persans, “Spectroscopy of II-VI nanocrystals at high pressures and temperatures”, J. Lum., 70, 69-84 (1996). (invited) (27 citations)

97.     J. Schroeder, M. Silvestri, L. W. Hwang, P. Persans, “Resonant Raman scattering and photoluminescence in II-VI semiconductor nanocrystals: Enhanced high pressure phase stability”, in High Pressure Science and Technology, ed. W. Trzeciakowski, (World Scientific, Singapore, 1996) pp. 603-605.

98.     X. S. Zhao, P. D. Persans, J. Schroeder, “Carrier induced strain in silicon nanocrystals”, in High Pressure Science and Technology, ed. W. Trzeciakowski, (World Scientific, Singapore, 1996) pp. 603-605.

99.     E Stokes, P D Persans, and K L Stokes, “Superlinear intensity dependence of photoluminescence in CdSSe nanocrystals”, Electrochemical Society Proceedings 95-17, 248 (1996).

100.  K. L. Stokes, H. S. Kang, P. Persans, P. Deelman, L. Schowalter, “Photomodulation Spectroscopy of Thin Ge Films Formed by MBE on Si (111)”, Mat. Res. Soc. Symp. Proc. 417, 165-168 (1996)

101.  H. S. Kang, G. E. Cho, K. W. Kim, P. D. Persans, “Fabrication and characterization of CdS thin films”, Mat. Res. Soc. Symp. Proc. 410, 51 (1996).

102.  T. M. Hayes, L. Lurio, P. D. Persans, H. Yukselici, “Stability of CdS Nanocrystals in Glass”, J. De Phys. IV, 7, 1101, (1997).

103.  P. D. Persans, P. Deelman, K. Stokes, L. Schowalter, A. Byrne, “Optical studies of Ge islanding on Si(111)”, Appl. Phys. Lett. 70, 472 (1997) (26 citations).

104.  J. Schroeder, M. Lee, K. Saha, and P. D. Persans, “Raman scattering in glasses at high temperature - The Boson peak and structural relaxation kinetics in glasses”, J. Non-Cryst. Sol., 222, 342 (1997). (2 citations)

105.  P. D. Persans and K. L. Stokes, “Embedded Nanocrystal Spectroscopy” in Handbook of Nanophase Materials ed. A. Goldstein, (Marcel Dekker, New York), 1997. (8 citations)

106.  P. D. Persans, “Evidence for Quantum Size Effects in a-Si:H-Based Superlattices”, in Properties of Amorphous Silicon, (INSPEC, London, 1997).

107.  John Schroeder, M. Lee, M. R. Silvestri, L-W. Hwang, P. D. Persans, “Raman scattering and photoluminescence measurements on II-VI semiconductor nanocrystals as a function of pressure and particle size,” Mat. Res. Soc. Symp. Proc. 452, 329 (1997).

108.  P. D. Persans, “Optical Properties Of Semiconductor Nanocrystal Quantum Dots,” IEEE-LEOS Newsletter, October 1998.

109.  G. Wagoner, E. Van Wagenen, G. Korenowski, P.D. Persans, “Second harmonic generation in MoS2”, J. Opt. Soc. Am. B, 15, 1017, (1998).

110.  Hayes, T.M.; Persans, P.D.; Lurio, L.B. “Growth and dissolution of CdS nanoparticles in glass”, J. Synchrotron Radiat. 6, 495 (1999).

111.  Xu Guang Huang, G. Carosi; P. Persans, Xi-Cheng Zhang, “Optical characterization of thin dielectric waveguides”, 1999 IEEE LEOS Proceedings. LEOS'99. 756-7 (1999)

112.  P D Persans, L B Lurio, J Pant, H Yükselici, G D Lian, and T M Hayes, "X-ray and Optical Absorption Spectroscopies for the Study of Dilute Semiconductor Nanocrystal/Glass Composites," J. Appl. Phys. 87, 3850 (2000) (15 citations)

113.  S. Ponoth, N. Agarwal, X. Huang, P. D. Persans, J. Plawsky, “Processing and characterization of inorganic films for optical waveguide components”, Mat. Res. Soc. Symp. Proc. 597, 81 (2000).

114.  N. Agarwal, X. Huang, P. Persans, J. Plawsky, S. Ponoth, X. Zhang, S. Murarka, “Optical properties of a polyimide for waveguide applications in on-chip interconnects”, Mat. Res. Soc. Symp. Proc. 597, 125 (2000).

115.  P D Persans, L B Lurio, J Pant, G D Lian, T M Hayes, "Zn incorporation in CdS nanoparticles in glass," Phys. Rev. B 63, 115320 (2001). (19 citations)

116.  T. M. Hayes, L. B. Lurio, P. D. Persans, “Order in CdS Nanoparticles in Glass”, Solid State Communications 117, 627 (2001). (3 citations)

117.  T. M. Hayes, L. B. Lurio, J. Pant, P. D. Persans, “Growth and Dissolution of CdS Nanoparticles in Glass”, J. Phys.: Cond. Matter 13, 425 (2001). (5 citations)

118.  T. M. Hayes, L. B. Lurio, J. Pant, P. D. Persans, “Stability of CdS nanocrystals in glass”, Phys. Rev. B 63 155417 (2001). (2 citations)

119.  N. Agarwal, S. Ponoth, J. Plawsky, P. D. Persans, “Roughness evolution in polyimide films due to plasma etching”, Appl. Phys. Lett. 78, 2294 (2001). (11 citations)

120.  A. Jain, S. Rogojevic, S. Ponoth, N. Agarwal, I Mathew, W.N. Gill, P. Persans, M. Tomozawa, J. L. Plawsky, and E. Simonyi, "Porous Materials as Low-k Dielectrics for Electronic and Optical Interconnects", Thin Solid Films 398, 513 (2001).(43 citations)

121.  N. Agarwal, S. Ponoth, J. Plawsky, P. D. Persans, “Optimal Plasma Etching for Fabrication of Channel Waveguides,” IEEE LEOS 2001 Proceedings.  vol. 907 p. 578 (vol.2) (2001).

122.  S. Ponoth, N. Agarwal, P. Persans, and J. Plawsky, “PECVD Silicon Oxide-Aerogel and Polymer-Aerogel Optical Waveguides”, in Microphotonics – Materials, Physics and Applications, (Materials Research Society Proceedings Vol. 637, 2001).

123.  N. Agarwal, S. Ponoth, J. L. Plawsky, P. D. Persans, “Optimized Oxygen Plasma Etching of Polyimide Films for Low Loss Optical Waveguides,” J Vac Sci Tech A  20, 1587, (2002). (9 citations)

124.  G. T. Dalakos, J. L. Plawsky, and P. D. Persans, "Surface Roughness Evolution of PECVD Cathodic and Anodic a-Si:H", Mat. Res. Soc. Symp. Proc., 715, 37 (2002).

125.  A. V. Mule, M. Bakir, J. Jayachandran, R. Villalez, H. A. Reed, N. Agarwal, S. Ponoth, J. Plawsky, P. Persans, P. A. Kohl, K. Martin, E. Glytis, T. K. Gaylord, and James D. Meindl , “Optical Waveguides with Embedded Air-gap Cladding Integrated Within a Sea-of-Leads (SoL) Wafer-level Package”, Proc. IEEE 2002 Internat. Intercon. Tech. Conf., p.122-124 (2002).

126.  S. Ponoth, N. T. Agarwal, P. D. Persans, and J. L. Plawsky, "Fabrication of controlled sidewall angles in thin films using isotropic etches", J. Vac. Soc. Tech. B 21, 1240, (2003).

127.  B. N. Tran, J. C. Joseph, J. P. Ferris, P. D. Persans, “Simulation of Titan Haze Formation using a Photochemical Flow Reactor: Optical Constants of the Polymer”, Icarus 165, 379 (2003). (11 citations)

128.  P. D. Persans, R. Ghoshal, S. Ponoth, J. Plawsky, N. Agarwal, A. Filin, Q.-Z. Fang, “Siloxane-based polymer epoxies for optical waveguides”, in Applications of Photonic Technology 6, ed. R. Lessard and G. Lampropoulos, SPIE Vol. 5260, 331 (2003).

129.  R. J. Gutmann, J. Q. Lu, J. J. McMahon, P. D. Persans, T. S. Cale, E. T. Eisenbraun, J. Castracane, and A. E. Kaloyeros, "Wafer-Level High Density Multifunctional Integration (HDMI) for Low-Cost Micro/Nano/Electro-Opto/Bio Heterogeneous Systems",  in 2003 Nanotechnology Conference, Vol. 1, pp. 530-533, (2003).

130.  J. Q. Lu, A. Jindal, P. D. Persans, and R. J. Gutmann, "Wafer-level Assembly of Heterogeneous Technologies", Proc. 2003 International Conf. on Semiconductor Manufacturing Technology, GaAs MANTECH, pp. 91-94, (2003).

131.  Feiran Huang, A. Filin, R. Doremus, P. Rao, P.D. Persans, " Long-Lifetime Nonlinear Absorption Of PbS Quantum Dots", Mat. Res. Soc. Symp. Proc., 737, 163, (2003).

  1. JP Ferris, Tran B, Joseph J, Vuitton V, Persans P, Chera J , "A laboratory investigation of the photochemical generation of a polymeric haze in Titan's atmosphere", Geochimica et Cosmochimica Acta 67 (18): A96-A96 Suppl. 1 SEP 2003

133.  T. M. Hayes, P. D. Persans, A. Filin, C. Peng, and W. Huang, " Cd and Se atomic environments during the growth of CdSe nanoparticles in glass", Physica Scripta, T115, 2004.

134.  S. Ponoth, N. Agarwal, P. D. Persans, J. L. Plawsky, "Plasma silicon oxide - silica xerogel based planar slab optical waveguides", J Vac Sci Technol B 22 902 (2004).

135.  G. Dalakos et al., "Surface roughness and structural aspects of anodic and cathodic plasma deposited a-Si:H at  low-temperature" J. Non-Cryst. Sol.,349 285 (2004).

136.  P. D. Persans, T. M. Hayes, and L. B. Lurio, "Size-dependent composition of semiconductor nanoparticles in glass", J. Non-Crys. Sol. 349 315 (2004).

137.  T. M. Hayes, P. D. Persans, A. Filin, and C. Peng, "Bonding changes during the growth of CdSe nanoparticles in glass," J. Non-Cryst. Sol., 349, 35 (2004).

138.  Anyuan Cao, P. M. Ajayan, A. Filin, and P.D. Persans, “Tailoring the optical excitation energies of single-walled carbon nanotubes”, Appl. Phys. Lett. 85 1598 (2004). (1 citation)

139.  P. D. Persans, N. Agarwal, S. Ponoth, J. Plawsky, "High-k Dielectrics: Waveguide and packaging applications”, in “Interlayer Dielectrics for Semiconductor Technologies”, ed. Shyam P. Murarka, Moshe Eizenberg, and Ashok K. Sinha, (Academic Press, San Diego, 2004), pp. 349-390

140.  George T. Dalakos, Joel L. Plawsky, Peter D. Persans, "Suppressed surface morphology instabilities in amorphous hydrogenated silicon deposition", Appl. Phys. Lett. 85 3462 (2004).

141.  A. Filin, K. Babocsi, M. Schmitt, P. D. Persans, W. Kiefer, and V. D. Kulakovskii, "Degree of Asymmetry of CdSe Quantum Dots Grown in Glass Probed by Four Wave Mixing", Mat. Res. Soc. Symp. Proc. 789 333  (2004).

142.  P. D. Persans, A. Filin, F. Huang, A. Vitek, P. G. N. Rao, R. H. Doremus, "Trap Effects in PbS Quantum Dots",  Mat. Res. Soc. Symp. Proc. 789 371 (2004)

143.   A. Cao, A. Filin, S. Talapatra, Y. Y. Choi, R. Vajtai, P. Persans, and P. M. Ajayan, "Tailoring the optical excitation energies of single-walled carbon nanotubes", Mat. Res. Soc. Symp. Proc., 789,  (2004)

144.    P. D. Persans, M. Ojha, R. J. Gutmann, J.-Q. Lu, A. Filin, J. Plawsky , "Optical Interconnect Components for Wafer Level Heterogeneous Hyper-Integration", Mat. Res. Soc. Symp. Proc. 812, 315 (2004).

  1. GT Dalakos, JL Plawsky, PD Persans, "Enhanced surface diffusion in low-temperature a-Si:H processing",  Mat. Res. Symp. Proc. 808, 245, (2004).

146.  Ponoth, S.S.; Agarwal, N.T.; Persans, P.D.; Plawsky, J.L., "Fabrication of micromirrors with self-aligned metallization using silicon back-end-of-the-line processes", Thin Solid Films, v 472, 169-79 (2005).

147.  A. Cao, P. M. Ajayan, A. Filin, and P. D. Persans, "Recovered Band-gap absorption of single-walled carbon nanotubes in acetone and alcohols", Advanced Materials, 17 (2): 147 (2005).

148.  G. Dalakos, J. Plawsky, and P. D. Persans, "Topographic evolution during deposition of plasma-deposited hydrogenated silicon on glass", Phys Rev B 72  205305 (2005).

149.  P. D. Persans, J. Q. Lu, R. Gutmann, S. Ponoth, R. Garrelts, A. Gennett, " On-Wafer Optical Interconnectivity using 3D Integration of Optical and Electronic ICs", 2005 Proceedings of the 22nd International VMIC Conference, p. 70, 2005.

150.  GT Dalakos, JL Plawsky, PD Persans, "Smoothing of rough a-Si : H surfaces by ion-assisted deposition and sputter erosion" , Materials Letters 60 (1): 15-18 (2006)

151.  A. Filin, K. Babocsi, M. Schmitt, P. D. Persans,  V. D. Kulakovskii, and W. Kiefer, “Exciton spin dephasing in CdSe nanocrystals embedded in glass”,  Phys Rev B 73 :  125322  (2006).

152.  R. Castelli, P.D. Persans, W. Strohmayer, V. Parkinson, "Optical Reflection Spectroscopy of Thick Corrosion Layers on 304 Stainless Steel ", Corrosion Science, submitted Mar 2006.

153.  Ferris JP, Tran BN, Vuitton V, Joseph J, Persans P, Chera JJ, Briggs R, Force M , "Laboratory simulation of photochemistry on Titan and comparison with available Huygens data" 
Origins of Life and Evolution of the Biosphere 36 (3): 331-332 JUN 2006

154.  P D Persans, A. Filin, N. E. Berry, F. Huang, and E. Chan, " Exciton Lifetime in PbS Quantum Dots in Glass", Mat. Res. Soc. Symp. Proc., (2006) 

 

Other publications:

EDITED BOOK: Chemical Processes in Inorganic Materials:  Metal and Semiconductor Clusters and Colloids, eds. P. Persans, J. Bradley, R. Chianelli, and G. Schmidt, Mat. Res. Soc. Symp. Proc. 272 (1992)

U.S. Patent ‑ #4,590,399 ‑ "Superlattice Piezoelectric Devices" (with C. Roxlo) May 1986

U. S. Patent – #6,832,036 – “Siloxane Optical Waveguides” (with R. Ghoshal, N. Agarwal,  S. Ponoth, and J. Plawsky), Dec 2004.