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Publications
99. R.P. Deng, S.R. Evans, and D. Gall, "Bandgap in Al1-xScxN," Appl. Phys. Lett. 102, 112103 (2013). pdf doi
98. J. S. Chawla, X.Y. Zhang and D. Gall, "Effective Electron Mean Free Path in TiN(001)," J. Appl. Phys. 113, 063704 (2013). pdf doi
97. S. Mukherjee and D. Gall, "Structure Zone Model for Extreme Shadowing Conditions," Thin Solid Films, 527, 158 (2013). doi
96. P.A. Papi, C.P. Mulligan, and D. Gall, "CrN-Ag Nanocomposite Coatings: Control of Lubricant Transport by Diffusion Barriers," Thin Solid Films, 524, 211 (2012). doi
95. C.P. Mulligan, P.A. Papi, and D. Gall, "Ag transport in CrN-Ag nanocomposite coatings," Thin Solid Films 520, 6774 (2012). doi
94. R.P. Deng, P. Muralt, and D. Gall, "Bi-axial texture development in AlN layers during off-axis sputter deposition," J. Vac. Sci. Tech. A, 30, 051501 (2012). pdf doi
93. J.S. Chawla and D. Gall, "Epitaxial Ag(001) grown on MgO(001) and TiN(001): Twinning, surface morphology, and electron surface scattering," J. Appl. Phys. 111, 043708 (2011). pdf doi
92. J. S. Chawla, F. Gstrein, K. P. O'Brien, J. S. Clarke, and D. Gall, "Electron scattering at surfaces and grain boundaries in Cu thin films and wires," Phys. Rev. B, 84, 235423 (2011). pdf doi
91. J.S. Chawla, X. Y. Zhang and D. Gall, "Epitaxial TiN(001) wetting layer for growth of thin single-crystal Cu(001)," J. Appl. Phys. 110, 043714 (2011). pdf doi
90. X. Y. Zhang, J. S. Chawla, R. P. Deng, and D. Gall, "Epitaxial suppression of the metal-insulator transition in CrN," Phys. Rev. B, 84, 073101 (2011). pdf doi
89. X.Y. Zhang, J.S. Chawla, B.M. Howe, D. Gall, "Variable-range hopping conduction in epitaxial CrN(001)," Phys. Rev. B, 83, 165205 (2011). pdf doi
88. S. Cazottes, Z.L. Zhang, R. Daniel, J.S. Chawla, D. Gall, G. Dehm, "Structural characterization of a Cu/MgO(001) interface using CS-corrected HRTEM," Thin Solid Films 519, 1662 (2010). doi
87. C.P. Mulligan, T.A. Blanchet, and D. Gall, "Control of lubricant transport by a CrN diffusion barrier layer during high-temperature sliding of a CrN-Ag composite coating," Surf. Coat. Technol. 205, 1350 (2010). doi
86. J. S. Chawla, F. Zahid, H. Guo, and D. Gall, "Effect of O2 adsorption on electron scattering at Cu(001) surfaces," Appl. Phys. Lett. 97, 132106 (2010). pdf doi
85. X.Y. Zhang and D. Gall, "CrN electronic structure and vibrational modes: an optical analysis," Phys. Rev. B 82, 045116 (2010). pdf doi
84. C.P. Mulligan, T.A. Blanchet, and D. Gall, "CrN-Ag nanocomposite coatings: High temperature tribological response." Wear 269, 125 (2010). doi
83. S. Mukherjee and D. Gall, "Power law scaling during physical vapor deposition under extreme shadowing," J. Appl. Phys. 107, 084301 (2010). pdf doi
82. F. Zahid, Y. Ke, D. Gall, and H. Guo "Resistivity of thin Cu films coated with Ta, Ti, Ru, Al, and Pd barrier layers from first principles," Phys. Rev. B 81, 045406 (2010). pdf doi
81. M.D. Gasda,
G.A. Eisman, and D. Gall, "Nanorod PEM Fuel Cell
Cathodes with Controlled Porosity," J. Electrochem. Soc. 157, B437 (2010); also featured in: Virt. J.
80. X.Y. Zhang and D. Gall, "Surface Mound Formation during Epitaxial Growth of CrN(001)," Thin Solid Films 518, 3813 (2010). doi
79. S. V.
Kesapragada, T-J. Yim, J. S. Dordick, R.S. Kane, and
D. Gall, "Selective assembly of multi-component nanosprings
and nanorods," J. Nanosci.
Nanotechnol. 10,
2252 (2010). doi
78. C.P. Mulligan, T.A. Blanchet, and D. Gall, "CrN-Ag nanocomposite coatings: Tribology at room temperature and during a temperature ramp," Surf. Coat. Technol. 204, 1388 (2010). doi
77. M.D. Gasda, G.A. Eisman, and D. Gall, "Sputter-Deposited Pt/CrN Nanoparticle PEM Fuel Cell Cathodes: Limited Proton Conductivity through Electrode Dewetting," J. Electrochem. Soc. 156, B71 (2010). pdf doi
76. M.D. Gasda, G.A. Eisman, and D. Gall, "Pore formation by in situ etching of nanorod PEM fuel cell electrodes," J. Electrochem. Soc. 156, B113 (2010). pdf doi
75. S. Mukherjee and D. Gall, "Anomalous scaling during glancing angle deposition," Appl. Phys. Lett 95, 173106 (2009). pdf doi
74. G. Dehm, H.P. Worgotter, S. Cazottes, J.M. Purswani, D. Gall, C. Mitterer, and D. Kiener, "Can micro-compression testing provide stress-strain data for thin films? A comparative study using Cu, VN, TiN and W coatings," Thin Solid Films 518, 1517 (2009). doi
73. J. S. Chawla and D. Gall, "Specular electron scattering at single-crystal Cu(001) surfaces," Appl. Phys. Lett 94, 252101 (2009). pdf doi
72. Youqi Ke, Ferdows Zahid, V. Timoshevskii, Ke Xia, D. Gall, and Hong Guo, "Resistivity of thin Cu films with surface roughness," Phys. Rev. B 79, 155406 (2009). pdf doi
71. S. Mukherjee, C. M. Zhou and D. Gall, "Temperature-induced chaos during nanorod growth by physical vapor deposition," J. Appl. Phys. 105 (2009). pdf doi
70. M.D. Gasda, R. Teki, T.-M. Lu, N. Koratkar, G.A. Eisman, and D. Gall, "Sputter-deposited Pt PEM fuel cell electrodes: particles vs. layers," J. Electrochem. Soc. 156, B614 (2009). pdf doi
69. C. M. Zhou, H.F. Li, and D. Gall, "Multi-component nanostructure design by atomic shadowing," Thin Solid Films 517, 1214 (2008). doi
68. C.P. Mulligan, T.A. Blanchet, and D. Gall, "CrN-Ag nanocomposite coatings: Effect of growth temperature on the microstructure," Surf. Coat. Technol. 203, 584 (2008). doi
67. J. M. Purswani and D. Gall, "Surface Morphological Evolution during Annealing of Epitaxial Cu(001) Layers," J. Appl. Phys. 104, 044305 (2008). pdf doi
66. V. Timoshevskii, Youqi Ke, Hong Guo, and D. Gall, "The influence of surface roughness on electrical conductance of thin Cu films: an ab initio study," J. Appl. Phys. 103, 113705 (2008). pdf doi
65. H.P. Worgotter, D. Kiener, J.M. Purswani, D. Gall, and G. Dehm, "Testing thin films by micro-compression: Benefits and limits," BHM 153, 257 (2008). doi
64. C.M. Zhou and D. Gall, "Two-Component Nanorod arrays by Glancing Angle Deposition," Small 4, 1351 (2008). doi
63. R. Nagar, B. R. Mehta, J. P. Singh, D. Jain, V. Ganesan, S. V. Kesapragada, and D. Gall, "Effect of swift heavy ion irradiation on the hardness of chromium nanorods," J. Vac. Sci. Technol. A 26, 887 (2008). pdf doi
62. S.V. Kesapragada, P.R. Sotherland, and D. Gall, "Ta nanotubes grown by glancing angle deposition," J. Vac. Sci. Technol. B 26, 678 (2008). pdf doi
61. C.M. Zhou and D. Gall, "Development of two-level porosity during glancing angle deposition," J. Appl. Phys. 103, 014307 (2008). pdf doi
60. P. Victor, L. Ci, S. Sreekala, A. Kumar, S.V. Kesapragada, D. Gall, O. Nalamasu, and P.M. Ajayan, J. Suhr, "Effects of compressive strains on electrical conductivities of a macroscale carbon nanotube block," Appl. Phys. Lett. 91, 153116 (2007). pdf doi
59. J.M. Purswani and D. Gall, "Electron Scattering at Single Crystal Cu Surfaces," Thin Solid Films, 516, 465 (2007). doi
58. C.M. Zhou and D. Gall, "Surface patterning by nanosphere lithography for layer growth with ordered pores," Thin Solid Films 516, 433 (2007). doi
57. C.M. Zhou and D. Gall,
"Competitive Growth of Ta Nanopillars during
Glancing Angle Deposition: Effect of Surface Diffusion," J. Vac. Sci.
Technol. A 25, 312 (2007). pdf doi
56. C.M. Zhou and D. Gall, "Growth
Competition during Glancing Angle Deposition of Nanorod
Honeycomb Arrays," Appl. Phys. Lett. 90, 093103 (2007). pdf doi
55. S. V. Kesapragada, P. Victor, O. Nalamasu, and D. Gall, "Nanospring pressure sensors grown by glancing angle deposition," Nano Lett. 6, 854 (2006). doi
54. C.M. Zhou and D. Gall, "Branched Ta nanocolumns grown by glancing angle deposition," Appl. Phys. Lett. 88, 203117 (2006). pdf doi
53. S. V. Kesapragada and D. Gall, "Two-component nanopillar arrays grown by glancing angle deposition," Thin Solid Films 494, 234 (2006). doi
52. J.R. Frederick, J. D'Arcy-Gall, D. Gall, "Growth of Epitaxial CrN on MgO(001): Role of Deposition Angle on Surface Morphological Evolution," Thin Solid Films, 494, 330 (2006). doi
51. K. Kutschej, C. Mitterer, C.P. Mulligan, and D. Gall, "High-Temperature Tribological Behavior of CrN-Ag Self-lubricating Coatings," Adv. Eng. Mat. 8, 1125 (2006). doi
50. J.M. Purswani, T. Spila, and D. Gall, "Growth of Epitaxial Cu on MgO(001) by magnetron sputter deposition," Thin Solid Films, 515, 1166 (2006). doi
49. C.M. Zhou and D. Gall, "The structure of Ta Nanopillars Grown by Glancing Angle Deposition," Thin Solid Films, 515, 1223 (2006). doi
48. S. V. Kesapragada and D. Gall, "Anisotropic Broadening of Cu Nanorods during Glancing Angle Deposition," Appl. Phys. Lett. 89, 203121 (2006). pdf doi
47. C. W. Lim, C.-S. Shin, D. Gall, J. M. Zuo, I. Petrov, and J. E. Greene, "Growth of CoSi2 on Si(001) by reactive deposition epitaxy," J. Appl. Phys. 97, 044909 (2005). pdf doi
46. Marcel A. Wall, David G. Cahill, I. Petrov, D. Gall, J.E. Greene, "Nucleation kinetics versus nitrogen partial pressure during homoepitaxial growth of stoichiometric TiN(001): A scanning tunneling microscopy study," Surf. Sci. 581, L122 (2005). doi
45. J.R. Frederick and D. Gall,
"Nanostaircases: An Atomic Shadowing Instability
during Epitaxial CrN(001) Layer Growth," Appl. Phys. Lett.
87, 053107 (2005); also featured in:
Virt. J. Nanoscale Sci.
Tech. 12, 6 (2005). pdf doi
44. H.-S. Seo, T.-Y. Lee, I. Petrov, J. E. Greene, and D. Gall, "Epitaxial and polycrystalline HfNx (0.8 < x < 1.5) layers on MgO(001): Film growth and physical properties," J. Appl. Phys. 97, 083521 (2005). pdf doi
43. J.R. Frederick and D. Gall, "Surface morphological evolution of epitaxial CrN(001) layers," J. Appl. Phys. 98, 054906 (2005). pdf doi
42. C.P. Mulligan and D. Gall, "CrN-Ag Self-Lubricating Hard Coatings," Surf. Coat. Technol. 200, 1495 (2005). doi
41. Jian Wang, Hanchen Huang, S. V. Kesapragada, and Daniel Gall, "Growth of Y-Shaped Nanorods through Physical Vapor Deposition," Nano Lett. 5, 2505 (2005). doi
40. C.-S. Shin, S. Rudenja. D. Gall, N. Hellgren, T.-Y. Lee, I. Petrov, and J. E. Greene, "Growth, surface morphology, and electrical resistivity of fully-strained substoichiometric epitaxial TiNx (0.67 < x < 1.0) layers on MgO(001)", J. Appl. Phys. 95, 356 (2004). pdf doi
39. H. A. Al-Brithen, A. R. Smith, and D. Gall, "Surface and bulk electronic structure of ScN(001) investigated by scanning tunneling microscopy/spectroscopy and optical absorption spectroscopy," Phys. Rev. B 70, 045303 (2004). pdf doi
38. H.-S. Seo, T.-Y. Lee, J. G. Wen, I. Petrov, J. E. Greene, and D. Gall, "Growth and physical properties of epitaxial HfN layers on MgO(001)," J. Appl. Phys. 96, 878 (2004). pdf doi
37. M.A. Wall, D.G. Cahill, I. Petrov, D. Gall, and J.E. Greene, "Nucleation kinetics during homoepitaxial growth of TiN(001) by reactive magnetron sputtering," Phys. Rev. B 70, 035413 (2004). pdf doi
36. D. Gall,
35. F. Tian, J. D'Arcy-Gall, T.-Y. Lee, M. Sardela, D. Gall, I. Petrov, and J.E. Greene, "Epitaxial Ti1-xWxN alloys grown on MgO(001) by ultrahigh vacuum reactive magnetron sputtering: Electronic properties and long-range cation ordering", J. Vac. Sci. Technol. A 21, 140 (2003). pdf doi
34. C.-S. Shin, D. Gall, N. Hellgren, J. Patscheider, I. Petrov, and J. E. Greene, "Vacancy hardening in single-crystal TiNx layers", J. Appl. Phys. 93, 6025 (2003). pdf doi
33. T.-Y. Lee, D. Gall, C.-S. Shin, N. Hellgren, I. Petrov, and J. E. Greene, "Growth and physical properties of epitaxial CeN layers on MgO(001)", J. Appl. Phys. 94, 921 (2003). pdf doi
32. S. Kodambaka, V. Petrova, S.V. Khare, D. Gall, A. Rockett, I. Petrov, and J.E. Greene, "Size-Dependent Detachment-Limited Decay Kinetics of Two-Dimensional TiN Islands on TiN(111)", Phys. Rev. Lett. 89, 176102 (2002). pdf doi
31. C.-S. Shin, Y.-W. Kim, D. Gall, J. E. Greene, and I. Petrov, "Phase Composition and Microstructure of Polycrystalline and Epitaxial TaNx Layers Grown on Oxidized Si(001) and MgO(001) by Reactive Magnetron Sputter Deposition", Thin Solid Films 402, 172 (2002). doi
30. D. Gall, C.-S. Shin, T. Spila, M. Oden, M.J.H. Senna, J.E. Greene, and I. Petrov, "Growth of Single-Crystal CrN on MgO(001): Effects of Low-energy Ion-irradiation on Surface Morphological Evolution and Physical Properties", J. Appl. Phys. 91, 3589 (2002). pdf doi
29. S. Y. Park, J. D’Arcy-Gall, D. Gall, Y.-W. Kim, P. Desjardins, and J. E. Greene, "C lattice site distributions in metastable Ge1-yCy alloys grown on Ge(001) by melecular-beam epitaxy", J. Appl. Phys. 91, 3644 (2002). pdf doi
28. D. Gall, C.-S. Shin, R.T. Haasch, I. Petrov, and J. E. Greene, "Band Gap in Epitaxial NaCl-structure CrN(001) Layers", J. Appl. Phys. 91, 5882 (2002). pdf doi
27. S. Y. Park, J. D'Arcy-Gall, D. Gall, J.A.N.T. Soares, Y.-W. Kim, P. Desjardins, and J. E. Greene, "Carbon incorporation pathways and lattice sites in Si1-yCy alloys grown on Si(001) by molecular-beam epitaxy", J. Appl. Phys. 91, 5716 (2002). pdf doi
26. H.A.H. AL-Brithen, E.M. Trifan, D.C. Ingram, A.R. Smith, D. Gall, "Phase Stability, nitrogen vacancies, growth mode, and surface structure of ScN(001) under Sc-rich conditions", J. Crystal Growth 242, 345 (2002). doi
25. C.-S. Shin,
D. Gall, Y.-W. Kim,
24. C.-S. Shin, Y.-W. Kim, N. Hellgren, D. Gall, I. Petrov, and J. E. Greene, "Epitaxial Growth of Metastable delta-TaN layers on MgO(001) using low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering, J. Vac. Sci. Technol. A 20, 2007 (2002). pdf doi
23. D. Gall, M. Stoehr, and J. E. Greene, "Vibrational Modes in Epitaxial Sc1-xTixN(001) Layers: An Ab-initio Calculation and Raman Spectroscopy Study" Phys. Rev. B. 64, 174302 (2001). pdf doi
22. D. Gall, I. Petrov, and J. E. Greene, "Epitaxial Sc1-xTixN(001): Optical and Electronic Transport Properties," J. Appl. Phys. 89, 401 (2001). pdf doi
21. D. Gall, M. Stadele, K. Jarrendahl, I. Petrov, P. Desjardins, R.T. Haasch, T.-Y. Lee, and J. E. Greene, "Electronic Structure of ScN Determined using Optical Spectroscopy, Photoemission, and ab initio Calculations," Phys. Rev. B. 63, 125119 (2001). pdf doi
20. A. R. Smith, H.A.H.
19. J. D'Arcy-Gall, D. Gall, I. Petrov, P. Desjardins, J. E. Greene, "Quantitative C Lattice Site Distributions in Epitaxial Ge1-yCy/Ge(001) layers," J. Appl. Phys., 90, 3910 (2001). pdf doi
18. C.-S. Shin, D. Gall, Y.-W. Kim, P. Desjardins, I. Petrov, J. E. Greene, M. Oden, and L. Hultman, "Epitaxial NaCl-Structure d-TaNx(001): Electronic Transport Properties, Elastic Modulus, and Hardness vs N/Ta Ratio," J. Appl. Phys. 90, 2879 (2001). pdf doi
17. N. Finnegan, R. T. Haasch, D. Gall,
16. D. Gall, J. D'Arcy-Gall, and J. E. Greene, "C Incorporation in Ge: An Ab Initio Study", Phys. Rev. B. 62, 7723 (2000). pdf doi
15. D. Gall, R. T. Haasch, N. Finnegan, T.-Y. Lee, C.-S. Shin, E. Sammann, J. E. Greene, and I. Petrov, "In-situ X-ray Photoelectron, Ultraviolet Photoelectron, and Auger Electron Spectroscopy from First-Row Transition-Metal Nitrides: ScN, TiN, VN, and CrN", Surf. Sci. Spectra 7, 167 (2000). pdf doi
14. J. D'Arcy-Gall, D. Gall, P.
Desjardins,
13. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial ScN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of as Deposited Layers", Surf. Sci. Spectra 7, 169 (2000). pdf doi
12. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial ScN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers", Surf. Sci. Spectra 7, 178 (2000). pdf doi
11. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial TiN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of as Deposited Layers", Surf. Sci. Spectra 7, 193 (2000). pdf doi
10. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial TiN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers", Surf. Sci. Spectra 7, 204 (2000). pdf doi
9. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial VN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of as Deposited Layers", Surf. Sci. Spectra 7, 221 (2000). pdf doi
8. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial VN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers", Surf. Sci. Spectra 7, 233 (2000). pdf doi
7. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial CrN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of as Deposited Layers", Surf. Sci. Spectra 7, 250 (2000). pdf doi
6. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial CrN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers", Surf. Sci. Spectra 7, 262 (2000). pdf doi
5. C.-S. Shin, D. Gall, P. Desjardins, A. Vailionis, H. Kim, I. Petrov, and J. E. Greene, "Growth and Physical Properties of Epitaxial Metastable Cubic TaN(001)," Appl. Phys. Lett. 75, 3808 (1999). pdf doi
4. D. Gall, I. Petrov, P. Desjardins, and J. E. Greene, "Microstructural Evolution and Poisson Ratio of Epitaxial ScN Grown on TiN(001)/MgO(001) by Ultra-High Vacuum Reactive Magnetron Sputter Deposition," J. Appl. Phys. 86, 5524 (1999). pdf doi
3. D. Gall,
2. D. Gall,
1996
1. D. Gall, R. Gampp, H. P. Lang, and P. Oelhafen, "Pulsed Plasma Deposition of Chromium Oxide/Chromium-Cermet Coatings," J. Vac. Sci. Tech. A 14, 374 (1996). pdf doi
1. D. Gall, "Nanopipes in Transition Metal Nitrides," in Encyclopedia of Nanoscience and Technology, edited by N.S. Nalwa (American Scientific Publishers, Los Angeles, 2004), Vol. 7, p.219-227.
2. D. Gall, "Nanostructured Transition-Metal Nitride Layers", in Engineering Thin Films and Nanostructures with Ion Beams, edited by Emile J. Knystautas, Series Optical Engineering, Vol. 95 (CRC Press, Boca Raton FL, 2005).
3. D. Gall, "Materials Processing: Vapor deposition techniques", in Encyclopedia of Condensed Matter Physics, edited by Franco Bassani, Jerry Liedl, and Peter Wyder (Academic Press/Elsevier, Oxford, UK, 2005).
1.
"Method for forming an epitaxial cobalt silicide
layer on MOS devices", US Patent 6,797,598, inventors: C.W. Lim, C.-S.
Shin, D. Gall, I. Petrov, and J.E. Greene, issued
2. "Pore formation by in situ etching of nanorod PEM fuel cell electrodes," M.D. Gasda, G.A. Eisman, and D. Gall, Serial Number 61/223,753, filed July 8, 2009.