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Publications

refereed Publications (Total citations: >3500, h-factor (ISI): 35)

2017

127. P.Y. Zheng, T. Zhou, B.J. Engler, J.S. Chawla, R. Hull and D. Gall, "Surface roughness dependence of the electrical resistivity of W(001) layers," J. Appl. Phys. 122, 095304 (2017). pdf doi

126. B. D. Ozsdolay, X. Shen, K. Balasubramanian, G. Scannell, L. Huang, M. Yamaguchi, and D. Gall, "Elastic constants of epitaxial cubic MoNx(001) layers," Surf. Coat. Technol. 325, 572 (2017). pdf doi

125. Chryssoula Metaxa, Spyros Kassavetis, Jean Francois Pierson, Daniel Gall, Panos Patsalas, "Infrared plasmonics with conductive ternary nitrides," ACS Appl. Mater. Interfaces 9, 10825 (2017). doi

124. C. Metaxa, B. D. Ozsdolay, T. Zorba, K. Paraskevopoulos, D. Gall, and P. Patsalas "Electronic and optical properties of rocksalt-phase tungsten nitride (B1-WN)," J. Vac. Sci. Technol. A 35, 031501 (2017). pdf doi

123. Pengyuan Zheng and Daniel Gall, "Role of the Fermi surface in the anisotropic size effect of the electrical resistivity of metallic nanostructures: Tungsten," J. Appl. Phys., under review, (2017).

122. B. D. Ozsdolay, K. Balasubramanian, and D. Gall, "Cation and anion vacancies in cubic molybdenum nitride," J. Alloys Compd. 705, 631 (2017). pdf doi

121. Z. T. Y. Liu, B. P. Burton, S. V. Khare, and D. Gall, "First-principles phase diagram calculations for the rocksalt-structure quasibinary systems TiN-ZrN, TiN-HfN and ZrN-HfN," J. Phys: Cond. Mat. 29, 035401 (2017). pdf doi

 

2016

120. Karthik Balasubramanian, Sanjay Khare and Daniel Gall, "Vacancy induced mechanical stabilization of cubic tungsten nitride," Phys. Rev. B 94, 174111 (2016). pdf doi

119. B. D. Ozsdolay, C. P. Mulligan, K. Balasubramanian, Liping Huang, S. V. Khare, and D. Gall, "Cubic β-WNx layers: growth and properties vs N-to-W ratio," Surf. Coat. Technol. 304, 98 (2016). pdf doi

118. Mathieu Cesar, Daniel Gall, and Hong Guo, "Reducing the Grain Boundary Resistivity of Copper by Doping," Phys. Rev. Appl. 5, 054018 (2016). pdf doi

117. P.Y. Zheng, T. Zhou, and D. Gall, "Electron channeling in TiO2 coated Cu layers," Semiconductor Sci. Technol. 31, 055005 (2016). pdf doi

116. D. Gall, "Electron mean free path in elemental metals," J. Appl. Phys. 119, 085101 (2016). pdf doi

115. K. Zhang, K. Balasubramanian, B.D. Ozsdolay, C.P. Mulligan, S.V. Khare, W.T. Zheng, and D. Gall, "Growth and mechanical properties of epitaxial NbN(001) films on MgO(001)," Surf. Coat. Technol. 288, 105 (2016). pdf doi

 

2015

114. B. D. Ozsdolay, C. P. Mulligan, M. Guerette, L. Huang, and D. Gall, "Epitaxial growth and properties of cubic WN on MgO(001), MgO(111), and Al2O3(0001)," Thin Solid Films, 590, 276 (2015). pdf doi

113. P. C. Jamison, Takaaki Tsunoda, T. Vo, J. Li, H. Jagannathan, S. R. Shinde, V. K. Paruchuri, D. Gall, "SiO2 Free HfO2 Gate Dielectrics by Physical Vapor Deposition," IEEE Trans. Electron Devices, 62, 2878 (2015). pdf doi

112. K. Zhang, K. Balasubramanian, B.D. Ozsdolay, C.P. Mulligan, S.V. Khare, W.T. Zheng, and D. Gall, "Epitaxial NbCxN1-x(001) layers: Growth, mechanical properties, and electrical resistivity," Surf. Coat. Technol. 277, 136 (2015). pdf doi

111. R.P. Deng, P.Y. Zheng, and D. Gall, "Optical and electron transport properties of rock-salt Al1-xScxN," J. Appl. Phys. 118, 015706 (2015). pdf doi

110. C.P. Mulligan, R. Wei, G. Yang, P. Zheng, R. Deng, D. Gall, "Microstructure and age hardening of C276 alloy coatings," Surf. Coat. Technol. 270, 299 (2015). pdf doi

109. P.Y. Zheng, B. D. Ozsdolay, and D. Gall, "Epitaxial Growth of Tungsten Layers on MgO(001)," J. Vac. Sci. Technol. A 33, 061505 (2015). pdf doi

108. R.P. Deng, B. Ozsdolay, P.Y. Zheng, S.V. Khare, and D. Gall, "Optical and transport measurement and first-principles determination of the ScN band gap," Phys. Rev. B 90, 045104 (2015). pdf doi

 

2014

107. Z. T. Y. Liu, D. Gall and S. V. Khare, "Electronic and bonding analysis of hardness in pyrite-type transition metal pernitrides," Phys. Rev. B 90, 134102 (2014). pdf doi

106. Pengyuan Zheng, R.P. Deng, and D. Gall, "Ni Doping on Cu Surfaces: Reduced Copper Resistivity," Appl. Phys. Lett. 105, 131603 (2014). pdf doi

105. Mathieu Cesar, Dongping Liu, Daniel Gall, and Hong Guo, "Calculated Resistances of Single Grain Boundaries in Copper," Phys. Rev. Appl. 2, 044007 (2014). pdf doi

104. Kan Zhang, M. Wen, S. Wang, R.P. Deng, D. Gall, and W.T. Zheng, "Sputter Deposited NbCxNy films: Effect of Nitrogen Content on Structure and Mechanical and Tribological Properties," Surf. Coat. Technol. 258, 746 (2014). doi

103. X. Zhou, D. Gall and S. V. Khare, "Mechanical properties and electronic structure of anti-ReO3 structured cubic nitrides, M3N, of d block transition metals M: an ab initio study," J. Alloys Comp. 595, 80 (2014). doi

102. Z. T. Y. Liu, X. Zhou, D. Gall and S. V. Khare, "First-principles investigation of the structural, mechanical and electronic properties of the NbO-structured 3d, 4d and 5d transition metal nitrides," Comp. Mat. Sci. 84, 365 (2014). doi

101. R.P. Deng, K. Jiang, and D. Gall, "Optical Phonon Modes in Al1-xScxN," J. Appl. Phys. 115, 013506 (2014). pdf doi

100. Z. T. Y. Liu, X. Zhou, S. V. Khare and D. Gall, "Structural, mechanical and electronic properties of 3d transition metal nitrides in cubic zincblende, rocksalt and cesium chloride structures: a first-principles investigation," J. Phys.: Cond. Mat. 26, 025404 (2014). doi

 

2013

99. R.P. Deng, S.R. Evans, and D. Gall, "Bandgap in Al1-xScxN," Appl. Phys. Lett. 102, 112103 (2013). pdf doi

98. J. S. Chawla, X.Y. Zhang and D. Gall, "Effective Electron Mean Free Path in TiN(001)," J. Appl. Phys. 113, 063704 (2013). pdf doi

97. S. Mukherjee and D. Gall, "Structure Zone Model for Extreme Shadowing Conditions," Thin Solid Films, 527, 158 (2013). doi

 

2012

96. P.A. Papi, C.P. Mulligan, and D. Gall, "CrN-Ag Nanocomposite Coatings: Control of Lubricant Transport by Diffusion Barriers," Thin Solid Films, 524, 211 (2012). doi

95. C.P. Mulligan, P.A. Papi, and D. Gall, "Ag transport in CrN-Ag nanocomposite coatings," Thin Solid Films 520, 6774 (2012). doi

94. R.P. Deng, P. Muralt, and D. Gall, "Bi-axial texture development in AlN layers during off-axis sputter deposition," J. Vac. Sci. Tech. A, 30, 051501 (2012). pdf doi

93. J.S. Chawla and D. Gall, "Epitaxial Ag(001) grown on MgO(001) and TiN(001): Twinning, surface morphology, and electron surface scattering," J. Appl. Phys. 111, 043708 (2011). pdf doi

 

2011

92. J. S. Chawla, F. Gstrein, K. P. O'Brien, J. S. Clarke, and D. Gall, "Electron scattering at surfaces and grain boundaries in Cu thin films and wires," Phys. Rev. B, 84, 235423 (2011). pdf doi

91. J.S. Chawla, X. Y. Zhang and D. Gall, "Epitaxial TiN(001) wetting layer for growth of thin single-crystal Cu(001)," J. Appl. Phys. 110, 043714 (2011). pdf doi

90. X. Y. Zhang, J. S. Chawla, R. P. Deng, and D. Gall, "Epitaxial suppression of the metal-insulator transition in CrN," Phys. Rev. B, 84, 073101 (2011). pdf doi

89. X.Y. Zhang, J.S. Chawla, B.M. Howe, D. Gall, "Variable-range hopping conduction in epitaxial CrN(001)," Phys. Rev. B, 83, 165205 (2011). pdf doi

 

2010

88. S. Cazottes, Z.L. Zhang, R. Daniel, J.S. Chawla, D. Gall, G. Dehm, "Structural characterization of a Cu/MgO(001) interface using CS-corrected HRTEM," Thin Solid Films 519, 1662 (2010). doi

87. C.P. Mulligan, T.A. Blanchet, and D. Gall, "Control of lubricant transport by a CrN diffusion barrier layer during high-temperature sliding of a CrN-Ag composite coating," Surf. Coat. Technol. 205, 1350 (2010). doi

86. J. S. Chawla, F. Zahid, H. Guo, and D. Gall, "Effect of O2 adsorption on electron scattering at Cu(001) surfaces," Appl. Phys. Lett. 97, 132106 (2010). pdf doi

85. X.Y. Zhang and D. Gall, "CrN electronic structure and vibrational modes: an optical analysis," Phys. Rev. B 82, 045116 (2010). pdf doi

84. C.P. Mulligan, T.A. Blanchet, and D. Gall, "CrN-Ag nanocomposite coatings: High temperature tribological response." Wear 269, 125 (2010). doi

83. S. Mukherjee and D. Gall, "Power law scaling during physical vapor deposition under extreme shadowing," J. Appl. Phys. 107, 084301 (2010). pdf doi

82. F. Zahid, Y. Ke, D. Gall, and H. Guo "Resistivity of thin Cu films coated with Ta, Ti, Ru, Al, and Pd barrier layers from first principles," Phys. Rev. B 81, 045406 (2010). pdf doi

81. M.D. Gasda, G.A. Eisman, and D. Gall, "Nanorod PEM Fuel Cell Cathodes with Controlled Porosity," J. Electrochem. Soc. 157, B437 (2010); also featured in: Virt. J. Nanoscale Sci. Tech. 21, 7 (2010). pdf doi

80. X.Y. Zhang and D. Gall, "Surface Mound Formation during Epitaxial Growth of CrN(001)," Thin Solid Films 518, 3813 (2010). doi

79. S. V. Kesapragada, T-J. Yim, J. S. Dordick, R.S. Kane, and D. Gall, "Selective assembly of multi-component nanosprings and nanorods," J. Nanosci. Nanotechnol. 10, 2252 (2010). doi

78. C.P. Mulligan, T.A. Blanchet, and D. Gall, "CrN-Ag nanocomposite coatings: Tribology at room temperature and during a temperature ramp," Surf. Coat. Technol. 204, 1388 (2010). doi

77. M.D. Gasda, G.A. Eisman, and D. Gall, "Sputter-Deposited Pt/CrN Nanoparticle PEM Fuel Cell Cathodes: Limited Proton Conductivity through Electrode Dewetting," J. Electrochem. Soc. 156, B71 (2010). pdf doi

76. M.D. Gasda, G.A. Eisman, and D. Gall, "Pore formation by in situ etching of nanorod PEM fuel cell electrodes," J. Electrochem. Soc. 156, B113 (2010). pdf doi

 

2009

75. S. Mukherjee and D. Gall, "Anomalous scaling during glancing angle deposition," Appl. Phys. Lett 95, 173106 (2009). pdf doi

74. G. Dehm, H.P. Worgotter, S. Cazottes, J.M. Purswani, D. Gall, C. Mitterer, and D. Kiener, "Can micro-compression testing provide stress-strain data for thin films? A comparative study using Cu, VN, TiN and W coatings," Thin Solid Films 518, 1517 (2009). doi

73. J. S. Chawla and D. Gall, "Specular electron scattering at single-crystal Cu(001) surfaces," Appl. Phys. Lett 94, 252101 (2009). pdf doi

72. Youqi Ke, Ferdows Zahid, V. Timoshevskii, Ke Xia, D. Gall, and Hong Guo, "Resistivity of thin Cu films with surface roughness," Phys. Rev. B 79, 155406 (2009). pdf doi

71. S. Mukherjee, C. M. Zhou and D. Gall, "Temperature-induced chaos during nanorod growth by physical vapor deposition," J. Appl. Phys. 105 (2009). pdf doi

70. M.D. Gasda, R. Teki, T.-M. Lu, N. Koratkar, G.A. Eisman, and D. Gall, "Sputter-deposited Pt PEM fuel cell electrodes: particles vs. layers," J. Electrochem. Soc. 156, B614 (2009). pdf doi

 

2008

69. C. M. Zhou, H.F. Li, and D. Gall, "Multi-component nanostructure design by atomic shadowing," Thin Solid Films 517, 1214 (2008). doi

68. C.P. Mulligan, T.A. Blanchet, and D. Gall, "CrN-Ag nanocomposite coatings: Effect of growth temperature on the microstructure," Surf. Coat. Technol. 203, 584 (2008). doi

67. J. M. Purswani and D. Gall, "Surface Morphological Evolution during Annealing of Epitaxial Cu(001) Layers," J. Appl. Phys. 104, 044305 (2008). pdf doi

66. V. Timoshevskii, Youqi Ke, Hong Guo, and D. Gall, "The influence of surface roughness on electrical conductance of thin Cu films: an ab initio study," J. Appl. Phys. 103, 113705 (2008). pdf doi

65. H.P. Worgotter, D. Kiener, J.M. Purswani, D. Gall, and G. Dehm, "Testing thin films by micro-compression: Benefits and limits," BHM 153, 257 (2008). doi

64. C.M. Zhou and D. Gall, "Two-Component Nanorod arrays by Glancing Angle Deposition," Small 4, 1351 (2008). doi

63. R. Nagar, B. R. Mehta, J. P. Singh, D. Jain, V. Ganesan, S. V. Kesapragada, and D. Gall, "Effect of swift heavy ion irradiation on the hardness of chromium nanorods," J. Vac. Sci. Technol. A 26, 887 (2008). pdf doi

62. S.V. Kesapragada, P.R. Sotherland, and D. Gall, "Ta nanotubes grown by glancing angle deposition," J. Vac. Sci. Technol. B 26, 678 (2008). pdf doi

61. C.M. Zhou and D. Gall, "Development of two-level porosity during glancing angle deposition," J. Appl. Phys. 103, 014307 (2008). pdf doi

 

2007

60. P. Victor, L. Ci, S. Sreekala, A. Kumar, S.V. Kesapragada, D. Gall, O. Nalamasu, and P.M. Ajayan, J. Suhr, "Effects of compressive strains on electrical conductivities of a macroscale carbon nanotube block," Appl. Phys. Lett. 91, 153116 (2007). pdf doi

59. J.M. Purswani and D. Gall, "Electron Scattering at Single Crystal Cu Surfaces," Thin Solid Films, 516, 465 (2007). doi

58. C.M. Zhou and D. Gall, "Surface patterning by nanosphere lithography for layer growth with ordered pores," Thin Solid Films 516, 433 (2007). doi

57. C.M. Zhou and D. Gall, "Competitive Growth of Ta Nanopillars during Glancing Angle Deposition: Effect of Surface Diffusion," J. Vac. Sci. Technol. A 25, 312 (2007). pdf doi

56. C.M. Zhou and D. Gall, "Growth Competition during Glancing Angle Deposition of Nanorod Honeycomb Arrays," Appl. Phys. Lett. 90, 093103 (2007). pdf doi

 

2006

55. S. V. Kesapragada, P. Victor, O. Nalamasu, and D. Gall, "Nanospring pressure sensors grown by glancing angle deposition," Nano Lett. 6, 854 (2006). doi

54. C.M. Zhou and D. Gall, "Branched Ta nanocolumns grown by glancing angle deposition," Appl. Phys. Lett. 88, 203117 (2006). pdf doi

53. S. V. Kesapragada and D. Gall, "Two-component nanopillar arrays grown by glancing angle deposition," Thin Solid Films 494, 234 (2006). doi

52. J.R. Frederick, J. D'Arcy-Gall, D. Gall, "Growth of Epitaxial CrN on MgO(001): Role of Deposition Angle on Surface Morphological Evolution," Thin Solid Films, 494, 330 (2006). doi

51. K. Kutschej, C. Mitterer, C.P. Mulligan, and D. Gall, "High-Temperature Tribological Behavior of CrN-Ag Self-lubricating Coatings," Adv. Eng. Mat. 8, 1125 (2006). doi

50. J.M. Purswani, T. Spila, and D. Gall, "Growth of Epitaxial Cu on MgO(001) by magnetron sputter deposition," Thin Solid Films, 515, 1166 (2006). doi

49. C.M. Zhou and D. Gall, "The structure of Ta Nanopillars Grown by Glancing Angle Deposition," Thin Solid Films, 515, 1223 (2006). doi

48. S. V. Kesapragada and D. Gall, "Anisotropic Broadening of Cu Nanorods during Glancing Angle Deposition," Appl. Phys. Lett. 89, 203121 (2006). pdf doi

 

2005

47. C. W. Lim, C.-S. Shin, D. Gall, J. M. Zuo, I. Petrov, and J. E. Greene, "Growth of CoSi2 on Si(001) by reactive deposition epitaxy," J. Appl. Phys. 97, 044909 (2005). pdf doi

46. Marcel A. Wall, David G. Cahill, I. Petrov, D. Gall, J.E. Greene, "Nucleation kinetics versus nitrogen partial pressure during homoepitaxial growth of stoichiometric TiN(001): A scanning tunneling microscopy study," Surf. Sci. 581, L122 (2005). doi

45. J.R. Frederick and D. Gall, "Nanostaircases: An Atomic Shadowing Instability during Epitaxial CrN(001) Layer Growth," Appl. Phys. Lett. 87, 053107 (2005); also featured in: Virt. J. Nanoscale Sci. Tech. 12, 6 (2005). pdf doi

44. H.-S. Seo, T.-Y. Lee, I. Petrov, J. E. Greene, and D. Gall, "Epitaxial and polycrystalline HfNx (0.8 < x < 1.5) layers on MgO(001): Film growth and physical properties," J. Appl. Phys. 97, 083521 (2005). pdf doi

43. J.R. Frederick and D. Gall, "Surface morphological evolution of epitaxial CrN(001) layers," J. Appl. Phys. 98, 054906 (2005). pdf doi

42. C.P. Mulligan and D. Gall, "CrN-Ag Self-Lubricating Hard Coatings," Surf. Coat. Technol. 200, 1495 (2005). doi

41. Jian Wang, Hanchen Huang, S. V. Kesapragada, and Daniel Gall, "Growth of Y-Shaped Nanorods through Physical Vapor Deposition," Nano Lett. 5, 2505 (2005). doi

 

2004

40. C.-S. Shin, S. Rudenja. D. Gall, N. Hellgren, T.-Y. Lee, I. Petrov, and J. E. Greene, "Growth, surface morphology, and electrical resistivity of fully-strained substoichiometric epitaxial TiNx (0.67 < x < 1.0) layers on MgO(001)", J. Appl. Phys. 95, 356 (2004). pdf doi

39. H. A. Al-Brithen, A. R. Smith, and D. Gall, "Surface and bulk electronic structure of ScN(001) investigated by scanning tunneling microscopy/spectroscopy and optical absorption spectroscopy," Phys. Rev. B 70, 045303 (2004). pdf doi

38. H.-S. Seo, T.-Y. Lee, J. G. Wen, I. Petrov, J. E. Greene, and D. Gall, "Growth and physical properties of epitaxial HfN layers on MgO(001)," J. Appl. Phys. 96, 878 (2004). pdf doi

37. M.A. Wall, D.G. Cahill, I. Petrov, D. Gall, and J.E. Greene, "Nucleation kinetics during homoepitaxial growth of TiN(001) by reactive magnetron sputtering," Phys. Rev. B 70, 035413 (2004). pdf doi

 

2003

36. D. Gall, S. Kodambaka, M.A. Wall, I. Petrov, and J.E. Greene, "Pathways of atomistic processes on TiN(001) and TiN(111) surfaces during film growth: an ab initio study", J. Appl. Phys. 93, 9086 (2003). pdf doi

35. F. Tian, J. D'Arcy-Gall, T.-Y. Lee, M. Sardela, D. Gall, I. Petrov, and J.E. Greene, "Epitaxial Ti1-xWxN alloys grown on MgO(001) by ultrahigh vacuum reactive magnetron sputtering: Electronic properties and long-range cation ordering", J. Vac. Sci. Technol. A 21, 140 (2003). pdf doi

34. C.-S. Shin, D. Gall, N. Hellgren, J. Patscheider, I. Petrov, and J. E. Greene, "Vacancy hardening in single-crystal TiNx layers", J. Appl. Phys. 93, 6025 (2003). pdf doi

33. T.-Y. Lee, D. Gall, C.-S. Shin, N. Hellgren, I. Petrov, and J. E. Greene, "Growth and physical properties of epitaxial CeN layers on MgO(001)", J. Appl. Phys. 94, 921 (2003). pdf doi

 

2002

32. S. Kodambaka, V. Petrova, S.V. Khare, D. Gall, A. Rockett, I. Petrov, and J.E. Greene, "Size-Dependent Detachment-Limited Decay Kinetics of Two-Dimensional TiN Islands on TiN(111)", Phys. Rev. Lett. 89, 176102 (2002). pdf doi

31. C.-S. Shin, Y.-W. Kim, D. Gall, J. E. Greene, and I. Petrov, "Phase Composition and Microstructure of Polycrystalline and Epitaxial TaNx Layers Grown on Oxidized Si(001) and MgO(001) by Reactive Magnetron Sputter Deposition", Thin Solid Films 402, 172 (2002). doi

30. D. Gall, C.-S. Shin, T. Spila, M. Oden, M.J.H. Senna, J.E. Greene, and I. Petrov, "Growth of Single-Crystal CrN on MgO(001): Effects of Low-energy Ion-irradiation on Surface Morphological Evolution and Physical Properties", J. Appl. Phys. 91, 3589 (2002). pdf doi

29. S. Y. Park, J. D'Arcy-Gall, D. Gall, Y.-W. Kim, P. Desjardins, and J. E. Greene, "C lattice site distributions in metastable Ge1-yCy alloys grown on Ge(001) by melecular-beam epitaxy", J. Appl. Phys. 91, 3644 (2002). pdf doi

28. D. Gall, C.-S. Shin, R.T. Haasch, I. Petrov, and J. E. Greene, "Band Gap in Epitaxial NaCl-structure CrN(001) Layers", J. Appl. Phys. 91, 5882 (2002). pdf doi

27. S. Y. Park, J. D'Arcy-Gall, D. Gall, J.A.N.T. Soares, Y.-W. Kim, P. Desjardins, and J. E. Greene, "Carbon incorporation pathways and lattice sites in Si1-yCy alloys grown on Si(001) by molecular-beam epitaxy", J. Appl. Phys. 91, 5716 (2002). pdf doi

26. H.A.H. AL-Brithen, E.M. Trifan, D.C. Ingram, A.R. Smith, D. Gall, "Phase Stability, nitrogen vacancies, growth mode, and surface structure of ScN(001) under Sc-rich conditions", J. Crystal Growth 242, 345 (2002). doi

25. C.-S. Shin, D. Gall, Y.-W. Kim, N. Hellgren, I. Petrov, and J. E. Greene, "Development of Preferred Orientation in Polycrystalline NaCl-structure d-TaN Layers Grown by Reactive Magnetron Sputtering: Role of Low-Energy Ion/Surface Interactions", J. Appl. Phys. 92, 5084 (2002). pdf doi

24. C.-S. Shin, Y.-W. Kim, N. Hellgren, D. Gall, I. Petrov, and J. E. Greene, "Epitaxial Growth of Metastable delta-TaN layers on MgO(001) using low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering, J. Vac. Sci. Technol. A 20, 2007 (2002). pdf doi

 

2001

23. D. Gall, M. Stoehr, and J. E. Greene, "Vibrational Modes in Epitaxial Sc1-xTixN(001) Layers: An Ab-initio Calculation and Raman Spectroscopy Study" Phys. Rev. B. 64, 174302 (2001). pdf doi

22. D. Gall, I. Petrov, and J. E. Greene, "Epitaxial Sc1-xTixN(001): Optical and Electronic Transport Properties," J. Appl. Phys. 89, 401 (2001). pdf doi

21. D. Gall, M. Stadele, K. Jarrendahl, I. Petrov, P. Desjardins, R.T. Haasch, T.-Y. Lee, and J. E. Greene, "Electronic Structure of ScN Determined using Optical Spectroscopy, Photoemission, and ab initio Calculations," Phys. Rev. B. 63, 125119 (2001). pdf doi

20. A. R. Smith, H.A.H. Al-Brithen, D.C. Ingram, and D. Gall, "Molecular Beam Epitaxy Control of the Structural, Optical, and Electronic Properties of ScN(001)," J. Appl. Phys. 90, 1809 (2001). pdf doi

19. J. D'Arcy-Gall, D. Gall, I. Petrov, P. Desjardins, J. E. Greene, "Quantitative C Lattice Site Distributions in Epitaxial Ge1-yCy/Ge(001) layers," J. Appl. Phys., 90, 3910 (2001). pdf doi

18. C.-S. Shin, D. Gall, Y.-W. Kim, P. Desjardins, I. Petrov, J. E. Greene, M. Oden, and L. Hultman, "Epitaxial NaCl-Structure d-TaNx(001): Electronic Transport Properties, Elastic Modulus, and Hardness vs N/Ta Ratio," J. Appl. Phys. 90, 2879 (2001). pdf doi

 

2000

17. N. Finnegan, R. T. Haasch, D. Gall, S. Kodambaka, J. E. Greene, and I. Petrov, "A Comparison of Auger Electron Spectra from Stoichiometric Epitaxial TiN(001) after (1) UHV Cleaving and (2) Ar+ Sputter Etching", Surf. Sci. Spectra 7, 93 (2000). pdf doi

16. D. Gall, J. D'Arcy-Gall, and J. E. Greene, "C Incorporation in Ge: An Ab Initio Study", Phys. Rev. B. 62, 7723 (2000). pdf doi

15. D. Gall, R. T. Haasch, N. Finnegan, T.-Y. Lee, C.-S. Shin, E. Sammann, J. E. Greene, and I. Petrov, "In-situ X-ray Photoelectron, Ultraviolet Photoelectron, and Auger Electron Spectroscopy from First-Row Transition-Metal Nitrides: ScN, TiN, VN, and CrN", Surf. Sci. Spectra 7, 167 (2000). pdf doi

14. J. D'Arcy-Gall, D. Gall, P. Desjardins, I. Petrov, and J. E. Greene, "Role of Fast Sputtered Particles During Sputter Deposition: Growth of Epitaxial Ge0.99C0.01/Ge(001)", Phys. Rev. B. 62, 11203 (2000). pdf doi

13. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial ScN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of as Deposited Layers", Surf. Sci. Spectra 7, 169 (2000). pdf doi

12. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial ScN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers", Surf. Sci. Spectra 7, 178 (2000). pdf doi

11. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial TiN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of as Deposited Layers", Surf. Sci. Spectra 7, 193 (2000). pdf doi

10. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial TiN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers", Surf. Sci. Spectra 7, 204 (2000). pdf doi

9. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial VN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of as Deposited Layers", Surf. Sci. Spectra 7, 221 (2000). pdf doi

8. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial VN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers", Surf. Sci. Spectra 7, 233 (2000). pdf doi

7. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial CrN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of as Deposited Layers", Surf. Sci. Spectra 7, 250 (2000). pdf doi

6. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial CrN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers", Surf. Sci. Spectra 7, 262 (2000). pdf doi

 

1999

5. C.-S. Shin, D. Gall, P. Desjardins, A. Vailionis, H. Kim, I. Petrov, and J. E. Greene, "Growth and Physical Properties of Epitaxial Metastable Cubic TaN(001)," Appl. Phys. Lett. 75, 3808 (1999). pdf doi

4. D. Gall, I. Petrov, P. Desjardins, and J. E. Greene, "Microstructural Evolution and Poisson Ratio of Epitaxial ScN Grown on TiN(001)/MgO(001) by Ultra-High Vacuum Reactive Magnetron Sputter Deposition," J. Appl. Phys. 86, 5524 (1999). pdf doi

 

1998

3. D. Gall, I. Petrov, N. Hellgren, L. Hultman, J.-E. Sundgren, and J. E. Greene, "Growth of Poly- and Single-Crystal ScN on MgO(001): Role of Low-Energy N2+ Irradiation in Determining Texture, Microstructure Evolution, and Mechanical Properties," J. Appl. Phys. 84, 6034 (1998). pdf doi

2. D. Gall, I. Petrov, L. D. Madsen, J.-E. Sundgren, and J. E. Greene, "Microstructure and Electronic Properties of the Refractory Semiconductor ScN Grown on MgO(001) by Ultra-High Vacuum Reactive Magnetron Sputter Deposition," J. Vac. Sci. Tech. A 16, 2411 (1998). pdf doi

 

1996

1. D. Gall, R. Gampp, H. P. Lang, and P. Oelhafen, "Pulsed Plasma Deposition of Chromium Oxide/Chromium-Cermet Coatings," J. Vac. Sci. Tech. A 14, 374 (1996). pdf doi

 

 
Book Chapters

1.      D. Gall, "Nanopipes in Transition Metal Nitrides," in Encyclopedia of Nanoscience and Technology, edited by N.S. Nalwa (American Scientific Publishers, Los Angeles, 2004), Vol. 7, p.219-227.

2.      D. Gall, "Nanostructured Transition-Metal Nitride Layers", in Engineering Thin Films and Nanostructures with Ion Beams, edited by Emile J. Knystautas, Series Optical Engineering, Vol. 95 (CRC Press, Boca Raton FL, 2005).

3.      D. Gall, "Materials Processing: Vapor deposition techniques", in Encyclopedia of Condensed Matter Physics, edited by Franco Bassani, Jerry Liedl, and Peter Wyder (Academic Press/Elsevier, Oxford, UK, 2005).

 

Patents

1.      "Method for forming an epitaxial cobalt silicide layer on MOS devices", US Patent 6,797,598, inventors: C.W. Lim, C.-S. Shin, D. Gall, I. Petrov, and J.E. Greene, issued September 28, 2004.

2.      "Pore formation by in situ etching of nanorod PEM fuel cell electrodes," US Patent 8,980,502, inventors: M.D. Gasda, G.A. Eisman, and D. Gall, issued March 17, 2015.